Toshiba - MOSFETs
3.364 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | SOP-Advance-8 | N-Channel | 1 Channel | 150 V | 64 A | 11 mOhms | - 20 V, 20 V | 4.3 V | 44 nC | + 175 C | 210 W | Enhancement | Reel | |||||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 30 V | - 20 V, 20 V | 2.3 V | 17.3 nC | + 150 C | 1.51 W | Enhancement | Reel | ||||||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 40 V | 150 A | 1.3 mOhms | - 20 V, 20 V | 3 V | 85 nC | + 175 C | 170 W | Enhancement | Reel | ||||||||
Mfr: SSM6J511NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET Power MGMT switch | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 12 V | 14 A | 6.5 mOhms | - 10 V, 10 V | 1 V | 47 nC | - 55 C | + 150 C | 1.25 W | Enhancement | U-MOSVII | Reel | ||||
Mfr: SSM3J35CT,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET ID=-0.1A VDSS=-20V | 0In Stock | Si | SMD/SMT | SOT-883-3 | P-Channel | 1 Channel | 20 V | 100 mA | 4.3 Ohms | - 10 V, 10 V | 1 V | - 55 C | + 150 C | 100 mW | Enhancement | MOSVI | Reel | |||||
Mfr: TK290A65Y,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSV 650V 35W 730pF 11.5A | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 11.5 A | 290 mOhms | - 30 V, 30 V | 4 V | 25 nC | - 55 C | + 150 C | 35 W | Enhancement | DTMOSV | Tube | ||||
Mfr: TK6R7P06PL,RQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 60V 1990pF 26nC 74A 66W | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 74 A | 5 mOhms | - 20 V, 20 V | 1.5 V | 26 nC | - 55 C | + 175 C | 66 W | Enhancement | U-MOSIX-H | Reel | ||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 4.4 A | 25.8 mOhms | - 8 V, 6 V | 1 V | 24.8 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | |||||
Mfr: TK20J60W,S1VE TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-3PN PD=165W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 20 A | 155 mOhms | - 30 V, 30 V | 3.7 V | 48 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tray | ||||
Mfr: SSM6N44FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/HiSpeed2n1 US6 (SOT-363) | 0In Stock | Si | SMD/SMT | US-6 | N-Channel | 2 Channel | 30 V | 100 mA | 4 Ohms | - 20 V, 20 V | 1.5 V | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | TSON-8 | P-Channel | 1 Channel | 30 V | 23 A | 7.8 mOhms | - 25 V, 20 V | 800 mV | 76 nC | - 55 C | + 150 C | 30 W | Enhancement | U-MOSVI | Reel | |||||
Mfr: TK7A55D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 7A 550V 35W 700pF 1.25 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 550 V | 7 A | 1.25 Ohms | 35 W | MOSVII | Tube | ||||||||||
Mfr: SSM3K333R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig N-CH MOS 30V 6A 20V VGSS | 0In Stock | Si | N-Channel | 1 Channel | AEC-Q100 | U-MOSVII-H | Reel | |||||||||||||||
Mfr: TK31N60W,S1VF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 88mOhm 30.8A 230W 3000pF | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30.8 A | 73 mOhms | - 30 V, 30 V | 3.7 V | 86 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TPH3300CNH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs X35PBF Power MOSFET Trans VGS10VVDS150V | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 150 V | 29 A | 33 mOhms | - 20 V, 20 V | 2 V | 10.6 nC | - 55 C | + 150 C | 57 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: XPN7R104NC,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 65W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | TSON-Advance-8 | N-Channel | 1 Channel | 40 V | 20 A | 7.1 mOhms | - 20 V, 20 V | 2.5 V | 21 nC | + 175 C | 65 W | Enhancement | AEC-Q101 | Reel | XPN7R104NC,L1XHQ(O | ||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 320 A | 770 uOhms | - 20 V, 20 V | 2.3 V | 74 nC | + 150 C | 170 W | Enhancement | Reel | TPHR9003NL1,LQ(M | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 64 A | 7 mOhms | - 20 V, 20 V | 3.5 V | 39 nC | + 175 C | 87 W | Enhancement | Tube | TK7R0E08QM,S1X(S | ||||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 30 V | 4 A | 71 mOhms | - 20 V, 10 V | 2 V | 5.9 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
Mfr: TK095Z65Z5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 650 V 0.095 Ohm N-ch MOSFET TO-247-4L(X) DTMOS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 29 A | 95 mOhms | 30 V | 4.5 V | 50 nC | + 150 C | 230 W | Enhancement | Tube | ||||||
0In Stock | Si | N-Channel | 1 Channel | U-MOSVII-H | Reel | |||||||||||||||||
Mfr: TK165A65Z5,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 650 V 0.165 Ohm N-ch MOSFET TO-220SIS DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 18 A | 165 mOhms | 30 V | 4.5 V | 30 nC | + 150 C | 40 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | TOLL-9 | N-Channel | 1 Channel | 600 V | 25 A | 99 mOhms | 30 V | 4 V | 36 nC | + 150 C | 176 W | Enhancement | Reel | |||||||
Mfr: TK115Z65Z5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 650 V 0.115 Ohm N-ch MOSFET TO-247-4L(X) DTMOS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 24 A | 115 mOhms | 30 V | 4.5 V | 42 nC | + 150 C | 190 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 150 V | 57 A | 7.4 mOhms | - 20 V, 20 V | 4.5 V | 66 nC | - 55 C | + 175 C | 46 W | Enhancement | Tube |