Toshiba - MOSFETs
3.370 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | Si | Reel | ||||||||||||||||||||
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 150 V | 57 A | 7.4 mOhms | 20 V | 4.5 V | 66 nC | - 55 C | + 175 C | 46 W | Enhancement | Tube | ||||||
Mfr: TPHR7904PB,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 170W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | SOP-Advance-8 | N-Channel | 1 Channel | 40 V | 150 A | 790 uOhms | 20 V | 3 V | 85 nC | + 175 C | 170 W | Enhancement | AEC-Q101 | Reel | TPHR7904PB,L1XHQ(O | ||||
Mfr: SSM3J35AFS,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-.25A VDSS=-20V | 0In Stock | Si | SMD/SMT | SOT-416-3 | P-Channel | 1 Channel | 20 V | 250 mA | 1.1 Ohms | 10 V | 1 V | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 27.6 A | 94 mOhms | 30 V | 2.5 V | 75 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: TPH6R008QM,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 80V UMOS9-H SOP-Advance(N) 6mohm | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V, 80 V | 107 A | 6 mOhms | 20 V | 3.5 V | 38 nC | + 175 C | 135 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 100 V | 190 A | 2.7 mOhms | 20 V | 4.3 V | 52 nC | + 175 C | 210 W | Enhancement | Reel | |||||||
0In Stock | Si | SMD/SMT | UF-6 | N-Channel, P-Channel | 2 Channel | 20 V | 1.5 A, 1.6 A | 247 mOhms, 430 mOhms | - 8 V, 10 V | 300 mV, 350 mV | 7.5 nC, 6.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 5.8 A | 850 mOhms | 30 V | 2.5 V | 11 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | SMD/SMT | CST3-3 | N-Channel | 1 Channel | 20 V | 200 mA | 5.6 Ohms | 10 V | 350 mV | - 55 C | + 150 C | 100 mW | Enhancement | U-MOSIII | Reel | ||||||
Mfr: SSM6J212FE,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOS VI FET ID -4A -20VDSS 500mW | 0In Stock | Si | SMD/SMT | ES6-6 | P-Channel | 1 Channel | 20 V | 4 A | 94 mOhms | 8 V | 1 V | 14.1 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK3A65D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 3A 650V 35W 540pF 2.25 Ohm | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 3 A | 2.25 Ohms | 30 V | 2.4 V | 11 nC | - 55 C | + 150 C | 35 W | Enhancement | MOSVII | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 27.6 A | 110 mOhms | 30 V | 2.5 V | 75 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: SSM6K810R,LXHF TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:100V IC:3.5A PD:1.5W TSOP6F | Not Available Online | Si | SMD/SMT | TSOP6F | N-Channel | 1 Channel | 100 V | 3.5 A | 51 mOhms | 20 V | 2.5 V | 3.2 nC | + 175 C | 1.5 W | Enhancement | AEC-Q101 | Reel | SSM6K810R,LXHF(B | ||||
Mfr: TK4P60DB(T6RSS-Q) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 3.7A 600V 80W 540pF 2.0 Ohm | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 3.7 A | 2 Ohms | 30 V | 4.4 V | 11 nC | + 150 C | 80 W | Enhancement | MOSVII | Reel | |||||
Mfr: TK11S10N1L,LXHQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs PD=65W F=1MHZ AEC-Q101 | Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 11 A | 28 mOhms | 20 V | 2.5 V | 15 nC | - 55 C | + 175 C | 65 W | Enhancement | AEC-Q101 | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 120 A | 4.9 mOhms | 20 V | 4.5 V | 96 nC | - 55 C | + 175 C | 300 W | Enhancement | Tube | ||||||
Mfr: TK16J60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 15.8A 130W FET 600V 1350pF 38nC | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 15.8 A | 160 mOhms | 30 V | 3.7 V | 38 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | |||||
Mfr: TK42E12N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 88A 140W FET 120V 3100pF 52nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 120 V | 88 A | 7.8 mOhms | 20 V | 4 V | 52 nC | - 55 C | + 150 C | 140 W | Enhancement | U-MOSVIII-H | Tube | ||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 40 V | 150 A | 1.3 mOhms | 20 V | 3 V | 85 nC | + 175 C | 170 W | Enhancement | Reel | ||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 13.7 A | 250 mOhms | 30 V | 3 V | 40 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | SMD/SMT | DSOP-8 | N-Channel | 1 Channel | 100 V | 150 A | 3.7 mOhms | 20 V | 1.5 V | 67 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | |||||
Mfr: TJ200F04M3L,LXHQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs 375W 1MHz Automotive; AEC-Q101 | Not Available Online | Si | SMD/SMT | TO-220SM-3 | P-Channel | 1 Channel | 40 V | 200 A | 1.8 mOhms | - 20 V, 10 V | 3 V | 460 nC | + 175 C | 375 W | Enhancement | AEC-Q101 | Reel | TJ200F04M3L,LXHQ(O | ||||
Mfr: TK25A60X5,S5X TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs Power MOSFET N-Channel | Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 120 mOhms | 30 V | 3 V | 60 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV-H | Tube | ||||
Mfr: TK3R1A04PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 40V 4670pF 63.4nC 82A 36W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 82 A | 2.5 mOhms | 20 V | 1.4 V | 63.4 nC | - 55 C | + 175 C | 36 W | Enhancement | U-MOSIX-H | Tube |