Toshiba - MOSFETs
3.840 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Not Available Online | Si | Reel | |||||||||||||||||||
Mfr: SSM6P36TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/HiSpeed2n1 UF6 (SOT-363F) | 0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 2 Channel | 20 V | 330 mA | 1.31 Ohms | 8 V | 1 V | 1.2 nC | + 150 C | 500 mW | Enhancement | AEC-Q101 | MOSIII | Reel | |||
Mfr: TK70J20D,S1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 200V 70A 410W MOSVII 160nC .0029 | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 200 V | 70 A | 27 mOhms | 20 V | 3.5 V | 160 nC | - 55 C | + 150 C | 410 W | Enhancement | MOSVII | ||||
Mfr: TK22E10N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch PWR FET 52A 72W 100V VDSS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 52 A | 13.8 mOhms | 20 V | 2 V | 28 nC | - 55 C | + 150 C | 72 W | Enhancement | U-MOSVIII-H | Tube | |||
Mfr: TK34E10N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch PWR FET 75A 103W 100V VDSS | 0In Stock | Si | N-Channel | 1 Channel | U-MOSVIII-H | Tube | |||||||||||||||
Mfr: TK72E08N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 80V N-Ch PWR FET 157A 192W 81nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 157 A | 4.3 mOhms | 20 V | 81 nC | 192 W | U-MOSVIII-H | Tube | |||||||
0In Stock | Si | SMD/SMT | SOT-723-3 | P-Channel | 1 Channel | 20 V | 250 mA | 1.1 Ohms | 10 V | 1 V | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII | Reel | |||||
Mfr: SSM3K16CT,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=0.1A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-883-3 | N-Channel | 1 Channel | 20 V | 100 mA | 3 Ohms | 10 V | 600 mV | - 55 C | + 150 C | 100 mW | Enhancement | MOSVI | Reel | ||||
Mfr: SSM3K16FS,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=0.1A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 20 V | 100 mA | 3 Ohms | 10 V | 600 mV | + 150 C | 100 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 500 mA | 460 mOhms, 460 mOhms | 20 V | 350 mV | 1.23 nC | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSVI | Reel | |||
Mfr: SSM3J325F,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch Small Signal 270pF -2A -20V 4.6nC | 0In Stock | Si | SMD/SMT | SOT-346-3 | P-Channel | 1 Channel | 20 V | 2 A | 311 mOhms | 8 V | 1 V | 4.6 nC | - 55 C | + 150 C | 600 mW | Enhancement | U-MOSVI | Reel | |||
Mfr: TK100L60W,VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 18mOhm 100A 800W 15000pF | 0In Stock | Si | Through Hole | TO-3PL-3 | N-Channel | 1 Channel | 600 V | 100 A | 15 mOhms | 30 V | 3.7 V | 360 nC | - 55 C | + 150 C | 797 W | Enhancement | DTMOSIV | Tube | |||
Mfr: TK39N60W,S1VF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 65mOhm 38.8A 270W 4100pF | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 38.8 A | 55 mOhms | 30 V | 3.7 V | 110 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSIV | Tube | |||
Mfr: TK8Q60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 600 V | 8 A | 420 mOhms | 30 V | 3.7 V | 18.5 nC | - 55 C | + 150 C | 80 W | DTMOSIV | Tube | ||||
Not Available Online | Si | SMD/SMT | DFN8x8-5 | N-Channel | 1 Channel | 650 V | 30 A | 99 mOhms | 30 V | 4 V | 47 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 400 mA | 1.5 Ohms | 20 V | 1.1 V | 390 pC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVII-H | Reel | ||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 250 V | 26 A | 44 mOhms | 20 V | 2 V | 22 nC | - 55 C | + 150 C | 78 W | Enhancement | U-MOSVIII-H | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 7.8 A | 530 mOhms | 30 V | 2.5 V | 16 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 17.3 A | 170 mOhms | 30 V | 2.5 V | 45 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 35 A | 80 mOhms | 30 V | 3 V | 115 nC | - 55 C | + 150 C | 50 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | SMD/SMT | SOT-23F | P-Channel | 1 Channel | 12 V | 6 A | 17.6 mOhms | 8 V | 300 mV | + 150 C | 1 W | Enhancement | U-MOSVII | Reel | ||||||
Mfr: SSM3K7002KF,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal Nch MOSFET ID:0.4A | 0In Stock | Si | SMD/SMT | SOT-346-3 | N-Channel | 1 Channel | 60 V | 400 mA | 1.05 Ohms | 20 V | 1.1 V | 390 pC | - 55 C | + 150 C | 900 mW | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | ||
Mfr: TK7S10N1Z,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 60W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 7 A | 48 mOhms | 20 V | 2 V | 7.1 nC | - 55 C | + 175 C | 50 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | ||
Mfr: TK31V60X,LQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs DTMOSIV-High Speed 600V 88mVGS=10V) | Not Available Online | Si | SMD/SMT | DFN8x8-5 | N-Channel | 1 Channel | 600 V | 30.8 A | 78 mOhms | 30 V | 3.5 V | 65 nC | - 55 C | + 150 C | 240 W | Enhancement | DTMOSIV-H | Reel | |||
0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 40 V | 2 A | 185 mOhms | 8 V | 850 mV | + 150 C | 1 W | Enhancement | U-MOSVII-H | Reel |