Toshiba - MOSFETs
3.364 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SSM6K810R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:100V IC:3.5A PD:1.5W TSOP6F | 0In Stock | Si | SMD/SMT | TSOP6F | N-Channel | 1 Channel | 100 V | 3.5 A | 51 mOhms | - 20 V, 20 V | 2.5 V | 3.2 nC | + 175 C | 1.5 W | Enhancement | AEC-Q101 | Reel | SSM6K810R,LXHF(B | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 11 A | 28 mOhms | - 20 V, 20 V | 2.5 V | 15 nC | - 55 C | + 175 C | 65 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: TK4A65DA(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 3.5A 650V 35W 600pF 1.9 Ohm | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 650 V | 4 A | 1.9 Ohms | 35 W | MOSVII | |||||||||||
Mfr: TK16J60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 15.8A 130W FET 600V 1350pF 38nC | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 15.8 A | 160 mOhms | - 30 V, 30 V | 3.7 V | 38 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | |||||
Mfr: TK31N60W5,S1VF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NChtrr135ns 0.082ohm DTMOS | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30.8 A | 82 mOhms | - 30 V, 30 V | 4.5 V | 105 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK20E60W,S1VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSIV 600 V 165W 1680pF 20A | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 20 A | 130 mOhms | - 30 V, 30 V | 3.7 V | 48 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TPHR7904PB,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 170W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | SOP-Advance-8 | N-Channel | 1 Channel | 40 V | 150 A | 790 uOhms | - 20 V, 20 V | 3 V | 85 nC | + 175 C | 170 W | Enhancement | AEC-Q101 | Reel | TPHR7904PB,L1XHQ(O | ||||
0In Stock | Si | SMD/SMT | UFV-5 | N-Channel | 1 Channel | 20 V | 2.4 A | 65 mOhms | - 20 V, 20 V | 1.2 V | 2.2 nC | - 55 C | + 125 C | 500 mW | Enhancement | Reel | ||||||
Mfr: TK40S06N1L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 2W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 40 A | 10.5 mOhms | - 20 V, 20 V | 2.5 V | 26 nC | + 175 C | 88.2 W | Enhancement | AEC-Q101 | Reel | TK40S06N1L,LXHQ(O | ||||
Mfr: TK58E06N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 60V N-Ch PWR FET 105A 110W 46nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 105 A | 5.4 mOhms | - 20 V, 20 V | 2 V | 46 nC | - 55 C | + 150 C | 110 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TPN22006NH,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 60V 21A 18W UMOSVIII 710pF 12nC | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 60 V | 21 A | 18 mOhms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 150 C | 18 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TK10P60W,RVQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 9.7A 80W FET 600V 700pF 20nC | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 9.7 A | 380 mOhms | - 30 V, 30 V | 3.7 V | 20 nC | - 55 C | + 150 C | 80 W | Enhancement | DTMOSIV | Reel | ||||
Mfr: TK6P60W,RVQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 9.7A 100W FET 600V 700pF 20nC | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 6.2 A | 820 mOhms | - 30 V, 30 V | 2.7 V | 12 nC | - 55 C | + 150 C | 60 W | Enhancement | DTMOSIV | Reel | ||||
Mfr: TP89R103NL,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOS VII-H 1.9W 630pF 15A 30V | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 15 A | 10.4 mOhms | - 20 V, 20 V | 2.3 V | 9.8 nC | - 55 C | + 150 C | 1.9 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TK14E65W,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NChannel 0.22ohm DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 13.7 A | 220 mOhms | - 30 V, 30 V | 3.5 V | 35 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK14N65W,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NChannel 0.22ohm DTMOS | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 13.7 A | 220 mOhms | - 30 V, 30 V | 3.5 V | 35 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK90S06N1L,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOSVIII 60V 3.3m max(VGS=10V) DPAK | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 90 A | 5.2 mOhms | - 20 V, 20 V | 1.5 V | 81 nC | - 55 C | + 175 C | 100 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
Mfr: SSM3J130TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal FET 24.8 nC -4.4A -20V | 0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 4.4 A | 25.8 mOhms | - 8 V, 8 V | 1 V | 24.8 nC | - 55 C | + 150 C | 800 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: SSM6N48FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SS FET 2 N-Ch 0.1A 30V 5.4 Ohm | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | U-MOSIII | Reel | ||||||||||||||
0In Stock | Si | SMD/SMT | CST3-3 | N-Channel | 1 Channel | 20 V | 200 mA | 5.6 Ohms | - 10 V, 10 V | 350 mV | - 55 C | + 150 C | 100 mW | Enhancement | U-MOSIII | Reel | ||||||
0In Stock | Si | SMD/SMT | ES6-6 | P-Channel | 2 Channel | 20 V | 330 mA | 3.6 Ohms | - 8 V, 8 V | 300 mV | 1.2 nC | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
0In Stock | Si | SMD/SMT | UDFN-6B | N-Channel | 1 Channel | 20 V | 6 A | 108 mOhms | - 8 V, 8 V | 1 V | 3.6 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOP-Advance-8 | N-Channel | 1 Channel | 150 V | 64 A | 11 mOhms | - 20 V, 20 V | 4.3 V | 44 nC | + 175 C | 210 W | Enhancement | Reel | |||||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 30 V | - 20 V, 20 V | 2.3 V | 17.3 nC | + 150 C | 1.51 W | Enhancement | Reel | ||||||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 40 V | 150 A | 1.3 mOhms | - 20 V, 20 V | 3 V | 85 nC | + 175 C | 170 W | Enhancement | Reel |