Toshiba - MOSFETs
3.364 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SSM5P15FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-0.1A VDSS=-30V | 0In Stock | Si | SMD/SMT | SOT-353-5 | P-Channel | 2 Channel | 30 V | 100 mA | 12 Ohms | - 20 V, 20 V | 1.7 V | + 150 C | 200 mW | Enhancement | MOSVI | Reel | ||||||
Mfr: TK20N60W,S1VF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSIV 600 V 165W 1680pF 20A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 130 mOhms | - 30 V, 30 V | 3.7 V | 48 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TPW4R008NH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-CH Mosfet 80V 116A 8DSOP | 0In Stock | Si | SMD/SMT | DSOP-8 | N-Channel | 1 Channel | 80 V | 116 A | 3.3 mOhms | - 20 V, 20 V | 2 V | 59 nC | - 55 C | + 150 C | 142 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: SSM3K116TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET High Speed Switching | 0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 30 V | 2.2 A | 100 mOhms | - 12 V, 12 V | 500 mV | - 55 C | + 150 C | 800 mW | Enhancement | AEC-Q101 | Reel | |||||
Mfr: SSM3K15AFS,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SM Sig N-CH MOS 30V 0.1A 20V VGSS | 0In Stock | Si | N-Channel | 1 Channel | U-MOSIII | Reel | ||||||||||||||||
Mfr: SSM6J501NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PWR MGT 1.5V Drive P-Ch MOS -20V | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 20 V | 10 A | 15.3 mOhms | - 8 V, 8 V | 300 mV | 29.9 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 80 V | 120 A | 2.43 mOhms | - 20 V, 20 V | 3.5 V | 87 nC | + 175 C | 210 W | Enhancement | Reel | ||||||||
0In Stock | Si | AEC-Q101 | Reel | |||||||||||||||||||
Mfr: SSM5N15FE(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch Sm Sig FET 0.1A 30V 2-in-1 | 0In Stock | Si | SMD/SMT | SOT-553-5 | N-Channel | 2 Channel | 30 V | 100 mA | 4 Ohms | - 20 V, 20 V | 1.5 V | - 55 C | + 150 C | 150 mW | Enhancement | MOSVI | Reel | |||||
Mfr: 2SJ305TE85LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch Vth -0.5 -1.5V RDS 2.4Ohm 200mW | 0In Stock | Si | SMD/SMT | SOT-346-3 | P-Channel | 1 Channel | 30 V | 200 mA | 4 Ohms | - 20 V, 20 V | 1.5 V | - 55 C | + 150 C | 200 mW | Enhancement | Reel | ||||||
Mfr: SSM6J512NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET Vdss=-12V, Id=-10A | 0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 12 V | 10 A | 40.1 mOhms | - 10 V, 10 V | 1 V | 19.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | U-MOSVII | Reel | ||||
Mfr: SSM3K72KFS,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=.3A VDSS=60V | 0In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 60 V | 300 mA | 1.05 Ohms | - 20 V, 20 V | 1.1 V | 600 pC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | |||
0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 30 V | 122 A | 2.9 mOhms | - 20 V, 20 V | 1.1 V | 26 nC | - 55 C | + 175 C | 75 W | Enhancement | U-MOSIX-H | Reel | |||||
0In Stock | Si | SMD/SMT | UF-6 | N-Channel | 1 Channel | 30 V | 1.6 A | 122 mOhms | - 20 V, 20 V | 2.6 V | 5.1 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
Mfr: TK3R9E10PL,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220 PD=230W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 100 A | 5.8 mOhms | - 20 V, 20 V | 2.5 V | 96 nC | - 55 C | + 175 C | 230 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: XPW6R30ANB,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 132W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DSOP-Advance-8 | N-Channel | 1 Channel | 100 V | 45 A | 6.3 mOhms | - 20 V, 20 V | 3.5 V | 52 nC | + 175 C | 132 W | Enhancement | AEC-Q101 | Reel | XPW6R30ANB,L1XHQ(O | ||||
Mfr: SSM3J145TU,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS P-ch Vdss:-20V Vgss:-8/+6V Id:-3A U | 0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 3 A | 103 mOhms | - 8 V, 6 V | 1 V | 4.6 nC | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 40 V | 20 A | 23.7 mOhms | - 20 V, 20 V | 2.5 V | 23 nC | - 55 C | + 175 C | 65 W | Enhancement | Reel | ||||||
Mfr: SSM3J168F,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=--0.4A VDSS=-60V | 0In Stock | Si | SMD/SMT | SOT-346-3 | P-Channel | 1 Channel | 60 V | 400 mA | 1.3 Ohms | - 20 V, 10 V | 2 V | 3 nC | - 55 C | + 150 C | 1.2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | |||
Mfr: SSM3K16FV,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=0.1A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-723-3 | N-Channel | 1 Channel | 20 V | 100 mA | 3 Ohms | - 10 V, 10 V | 600 mV | + 150 C | 150 mW | Enhancement | MOSVI | Reel | ||||||
Mfr: SSM3K376R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=4A VDSS=30V | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 30 V | 4 A | 56 mOhms | - 8 V, 12 V | 1 V | 2.2 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 6.1 mOhms | - 20 V, 20 V | 1.5 V | 28.3 nC | - 55 C | + 175 C | 36 W | Enhancement | U-MOSIX-H | Tube | |||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 20 V | 5.5 A | 29.8 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
Mfr: TJ30S06M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 68W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 30 A | 21.8 mOhms | - 20 V, 10 V | 3 V | 80 nC | + 175 C | 68 W | Enhancement | AEC-Q101 | Reel | TJ30S06M3L,LXHQ(O | ||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 6 A | 23 mOhms | - 10 V, 10 V | 1 V | 16.6 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVII | Reel |
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