Toshiba - MOSFETs
3.840 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 30 V | 6 A | 42 mOhms | - 12 V, 6 V | 1.2 V | 8.2 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
Not Available Online | Si | SMD/SMT | CST3C-3 | P-Channel | 1 Channel | 20 V | 700 mA | 500 mOhms | 10 V | 1 V | + 150 C | 500 mW | Enhancement | U-MOSVII | Reel | |||||||
0In Stock | Si | SMD/SMT | SOT-563-6 | P-Channel | 2 Channel | 20 V | 250 mA | 1.4 Ohms | 10 V | 1 V | + 150 C | 250 mW | Enhancement | U-MOSVII | Reel | |||||||
Not Available Online | Si | SMD/SMT | PS-8 | N-Channel | 1 Channel | 40 V | 5 A | 31.8 mOhms | 20 V | 2 V | 11.8 nC | - 55 C | + 175 C | 1.96 W | Enhancement | AEC-Q101 | U-MOSIV | Reel | ||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 2 Channel | 150 V | 90 A | 11.1 mOhms | 20 V | 4.5 V | 38 nC | + 175 C | 180 W | Enhancement | Reel | |||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 150 V | 77 A | 14.1 mOhms | 20 V | 4.5 V | 31 nC | + 175 C | 170 W | Enhancement | Reel | |||||||
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 150 V | 49 A | 9.7 mOhms | 20 V | 4.5 V | 50 nC | - 55 C | + 175 C | 45 W | Enhancement | Tube | ||||||
0In Stock | Si | 650 V | 30 A | 75 mOhms | 30 V | 4 V | 47 nC | - 55 C | + 150 C | 230 W | Enhancement | Tube | ||||||||||
0In Stock | Si | 650 V | 15 A | 158 mOhms | 30 V | 4 V | 25 nC | - 55 C | + 150 C | 130 W | Enhancement | Tube | ||||||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 15 A | 130 mOhms | - 20 V, 10 V | 4 V | 69 nC | - 55 C | + 175 C | 75 W | Enhancement | TJ15S10M3,LQ(O | ||||||
Mfr: SSM3J66MFV,L3XHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q SS MOS P-ch Low Voltage Gate Drive VDSS:-20V Ic:-0.8A SOT-723 | 0In Stock | Si | SMD/SMT | VESM-3 | P-Channel | 1 Channel | 20 V | 800 mA | 480 mOhms | - 8 V, 6 V | 1 V | 1.6 nC | + 150 C | 500 mW | Enhancement | AEC-Q101 | Reel | SSM3J66MFV,L3XHF(B | ||||
Mfr: TPH1500CNH1,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 150V U-MOS VIII-H SOP-Advance(N) 15.4mohm | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 150 V | 38 A | 15.4 mOhms | 20 V | 4 V | 22 nC | - 55 C | + 150 C | 170 W | Enhancement | Reel | |||||
0In Stock | Si | Reel | ||||||||||||||||||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 100 V | 40 A | 20 mOhms | 20 V | 2.5 V | 24 nC | - 55 C | + 175 C | 104 W | Enhancement | Reel | |||||||
Mfr: TK065Z65Z,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PWR MOSFET TRANSISTR PD=270W F=1MHz | 0In Stock | Si | Through Hole | TO-247-4L-4 | N-Channel | 1 Channel | 650 V | 38 A | 65 mOhms | 30 V | 4 V | 62 nC | - 55 C | + 150 C | 270 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | UDFN-6B | N-Channel | 1 Channel | 30 V | 6 A | 39.1 mOhms | - 8 V, 12 V | 1 V | 3.2 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 33 A | 9.7 mOhms | 20 V | 2.5 V | 33 nC | - 55 C | + 175 C | 125 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: TK60S10N1L,LXHQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs PD=180W F=1MHZ AEC-Q101 | Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 60 A | 6.11 mOhms | 20 V | 3.5 V | 60 nC | - 55 C | + 175 C | 180 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: SSM6P15FE(TE85L,F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-.1A VDSS=-30V | 0In Stock | Si | SMD/SMT | ES6-6 | P-Channel | 2 Channel | 30 V | 100 mA | 8 Ohms | 20 V | 1.7 V | - 55 C | + 150 C | 150 mW | Enhancement | AEC-Q100 | MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 30 V | 2 A | 160 mOhms | 20 V | - 55 C | + 150 C | 800 mW | Enhancement | Reel | ||||||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 20 V | 4 A | 42.7 mOhms | - 8 V, 6 V | 1 V | 12.8 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 1 Channel | 30 V | 1.9 A | 133 mOhms | 12 V | 1 V | 1.9 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSIII | Reel | |||||
0In Stock | Si | SMD/SMT | UF-6 | N-Channel | 1 Channel | 30 V | 500 mA | 145 mOhms | 12 V | 1.1 V | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | |||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 20 V | 1.5 A | 213 mOhms | 8 V | 1 V | 6.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
Mfr: SSM3K361TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=3.5A VDSS=100V | 0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 100 V | 3.5 A | 51 mOhms | 20 V | 1.5 V | 3.2 nC | - 55 C | + 175 C | 1 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel |