Toshiba - MOSFETs
3.370 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 35 A | 80 mOhms | 30 V | 3 V | 115 nC | - 55 C | + 150 C | 50 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 60 V | 2 A | 300 mOhms | 20 V | 800 mV | 6 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | MOSV | Reel | ||||
Mfr: SSM6J214FE(TE85L,F TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs LowON Res MOSFET ID=-3.6A VDSS=-30V | Not Available Online | Si | SMD/SMT | SOT-563-6 | P-Channel | 1 Channel | 30 V | 3.6 A | 50 mOhms | 12 V | 1.2 V | 7.9 nC | - 55 C | + 150 C | 700 mW | Enhancement | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 40 V | 2 A | 185 mOhms | 8 V | 850 mV | + 150 C | 1 W | Enhancement | U-MOSVII-H | Reel | |||||||
Mfr: TPN13008NH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 80V 40A 18nC MOSFET | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 80 V | 40 A | 13.3 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TPH11006NL,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 60V 40A 23nC MOSFET | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 40 A | 17 mOhms | 20 V | 2.5 V | 23 nC | - 55 C | + 150 C | 34 W | Enhancement | U-MOSVIII-H | Reel | TPH11006NL,LQ(S | |||
Mfr: SSM6J213FE(TE85L,F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOS VI FET ID -2.6A -20V 290pF | 0In Stock | Si | SMD/SMT | ES6-6 | P-Channel | 1 Channel | 20 V | 2.6 A | 250 mOhms | 8 V | 1 V | 4.7 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | ||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 40 V | 200 A | 530 uOhms | 20 V | 3 V | 128 nC | + 175 C | 375 W | Enhancement | Reel | ||||||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 400 mA | 1.5 Ohms | 20 V | 1.1 V | 390 pC | - 55 C | + 150 C | 1 W | Enhancement | U-MOSVII-H | Reel | |||||
Mfr: SSM6N815R,LF TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs LowON Res MOSFET ID=2A VDSS=100V | Not Available Online | Si | SMD/SMT | TSOP-6 | N-Channel | 2 Channel | 100 V | 2 A | 84 mOhms, 84 mOhms | 20 V | 1.5 V | 3.1 nC | - 55 C | + 150 C | 1.4 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TJ90S04M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 180W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 90 A | 4.3 mOhms | - 20 V, 10 V | 2 V | 172 nC | + 175 C | 180 W | Enhancement | AEC-Q101 | Reel | TJ90S04M3L,LXHQ(O | ||||
Mfr: SSM3K16CT,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=0.1A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-883-3 | N-Channel | 1 Channel | 20 V | 100 mA | 3 Ohms | 10 V | 600 mV | - 55 C | + 150 C | 100 mW | Enhancement | MOSVI | Reel | |||||
Mfr: TK3R1P04PL,RQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 40V 4670pF 60nC 130A 87W | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 130 A | 2.5 mOhms | 20 V | 1.4 V | 60 nC | - 55 C | + 175 C | 87 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: TPW1R306PL,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs POWER MOSFET TRANSISTOR PD=170W | 0In Stock | Si | SMD/SMT | DSOP-8 | N-Channel | 1 Channel | 60 V | 260 A | 1.29 mOhms | 20 V | 1.5 V | 91 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | ||||
Mfr: SSM3J338R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET Vdss= -12V, ID= -6A | 0In Stock | Si | SMD/SMT | SOT-23F | P-Channel | 1 Channel | 12 V | 6 A | 17.6 mOhms | 8 V | 300 mV | + 150 C | 1 W | Enhancement | U-MOSVII | Reel | ||||||
0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 500 mA | 460 mOhms, 460 mOhms | 20 V | 350 mV | 1.23 nC | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
Mfr: SSM3K16FS,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=0.1A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-416-3 | N-Channel | 1 Channel | 20 V | 100 mA | 3 Ohms | 10 V | 600 mV | + 150 C | 100 mW | Enhancement | AEC-Q101 | MOSVI | Reel | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 4 A | 1.7 Ohms | 30 V | 2.4 V | 12 nC | - 55 C | + 150 C | 100 W | Enhancement | MOSVII | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 7.5 A | 500 mOhms | 20 V | 1.5 V | 16 nC | - 55 C | + 150 C | 30 W | Enhancement | MOSVII | Tube | |||||
Mfr: SSM3J35AMFV,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-.25A VDSS=-20V | 0In Stock | Si | SMD/SMT | SOT-723-3 | P-Channel | 1 Channel | 20 V | 250 mA | 1.1 Ohms | 10 V | 1 V | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII | Reel | |||||
Mfr: TK70J20D,S1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 200V 70A 410W MOSVII 160nC .0029 | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 200 V | 70 A | 27 mOhms | 20 V | 3.5 V | 160 nC | - 55 C | + 150 C | 410 W | Enhancement | MOSVII | |||||
0In Stock | Si | SMD/SMT | UF-6 | P-Channel | 1 Channel | 20 V | 1.5 A | 213 mOhms | 8 V | 1 V | 6.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
Mfr: SSM3K361TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=3.5A VDSS=100V | 0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 100 V | 3.5 A | 51 mOhms | 20 V | 1.5 V | 3.2 nC | - 55 C | + 175 C | 1 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 92 A | 6 mOhms | 20 V | 1.4 V | 27 nC | - 55 C | + 175 C | 81 W | Enhancement | U-MOSIX-H | Reel | |||||
Mfr: TK20J50D(F) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs PD=280W VDS=500V N-Silicon N CH MOS | 0In Stock | Si | Through Hole | SC-65-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | 30 V | 2 V | 45 nC | + 150 C | 280 W | Enhancement | Tube |