Toshiba - MOSFETs
3.370 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: TK58A06N1,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NCh 4.4ohm VGS10V10uAVDS60V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 58 A | 4.4 mOhms | 20 V | 4 V | 46 nC | - 55 C | + 150 C | 35 W | Enhancement | U-MOSVIII-H | Tube | |||
Mfr: SSM6N7002KFU,LXH TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs SMOS 2 in 1 Dual Nch High ESD protected | 0In Stock | Si | SMD/SMT | US6-6 | N-Channel | 1 Channel | 60 V | 300 mA | 1.5 Ohms | 20 V | 2.1 V | 390 pC | + 150 C | 500 mW | Enhancement | AEC-Q101 | Reel | ||||
Mfr: TK33S10N1Z,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOSVIII 100V 10m max(VGS=10V) DPAK | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 33 A | 9.7 mOhms | 20 V | 2 V | 28 nC | - 55 C | + 175 C | 125 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | ||
Mfr: TPH8R903NL,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOS VII-H 24W 630pF 38A 30V | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 38 A | 10.2 mOhms | 20 V | 2.3 V | 9.8 nC | - 55 C | + 150 C | 24 W | Enhancement | U-MOSVIII-H | Reel | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 105 mOhms | 30 V | 2.5 V | 40 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV-H | Tube | ||||
Mfr: SSM3J118TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-1.4A VDSS=-30V | 0In Stock | Si | SMD/SMT | UFM-3 | P-Channel | 1 Channel | 30 V | 1.4 A | 240 mOhms | 20 V | 2.6 V | + 150 C | 800 mW | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | SMD/SMT | ES6-6 | N-Channel | 2 Channel | 20 V | 180 mA | 20 Ohms, 20 Ohms | 10 V | 400 mV | - 55 C | + 150 C | 150 mW | Enhancement | MOSVI | Reel | |||||
Mfr: TK28N65W5,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-247(OS) PD=230W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 27.6 A | 130 mOhms | 30 V | 4.5 V | 90 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 80 mOhms | 30 V | 4 V | 43 nC | + 150 C | 211 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 1 Channel | 20 V | 2 A | 112 mOhms | 8 V | 300 mV | 4.6 nC | - 55 C | + 150 C | 1 W | Enhancement | Reel | |||||
Mfr: SSM6N357R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=.65A VDSS=60V | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 2 Channel | 60 V | 650 mA | 1.8 Ohms | 12 V | 1.3 V | 1.5 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | MOSV | Reel | ||
Mfr: TK31A60W,S4VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 30.8A 45W FET 600V 3000pF 86nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 30.8 A | 73 mOhms | 30 V | 3.7 V | 86 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | |||
0In Stock | Si | SMD/SMT | UFM-3 | N-Channel, SBD | 1 Channel | 20 V | 3.2 A | 10 V | AEC-Q101 | Reel | |||||||||||
Mfr: TK12E80W,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 800V 1400pF 23nC 11.5A 165W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 11.5 A | 380 mOhms | 20 V | 3 V | 23 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | |||
Mfr: TK62Z60X,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-247-4L PD=400W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-247-4 | N-Channel | 1 Channel | 600 V | 61.8 A | 40 mOhms | 30 V | 3.5 V | 135 nC | - 55 C | + 150 C | 400 W | Enhancement | DTMOSIV-H | Tube | |||
Mfr: TK11S10N1L,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 65W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 11 A | 28 mOhms | 20 V | 1.5 V | 15 nC | - 55 C | + 175 C | 65 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | ||
Mfr: XPH6R30ANB,L1XHQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs PD=132W F=1MHZ AEC-Q101 | Not Available Online | Si | SMD/SMT | SOP-Advance-8 | N-Channel | 1 Channel | 100 V | 45 A | 6.3 mOhms | 20 V | 3.5 V | 52 nC | - 55 C | + 175 C | 132 W | Enhancement | AEC-Q101 | Reel | |||
Mfr: TK62N60X,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV-High Speed 600V 40mOhmmax | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 61.8 A | 33 mOhms | 30 V | 3.5 V | 135 nC | - 55 C | + 150 C | 400 W | Enhancement | DTMOSIV-H | Tube | |||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 45 V | 232 A | 1.4 mOhms | 20 V | 1.4 V | 74 nC | + 175 C | 132 W | Enhancement | U-MOSIX-H | Reel | |||||
Mfr: TK20E60W5,S1VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220 PD=165W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 20 A | 175 mOhms | 30 V | 4.5 V | 55 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | |||
Mfr: SSM3J15FV,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET High Speed Switching | 0In Stock | Si | SMD/SMT | VESM-3 | P-Channel | 1 Channel | 30 V | 100 mA | 12 Ohms | 20 V | 1.1 V | + 150 C | 150 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 150 mOhms | 30 V | 3 V | 55 nC | - 55 C | + 150 C | 165 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TPN2010FNH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOSVIII 250V 200m (VGS=10V) TSON-ADV | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 250 V | 9.9 A | 168 mOhms | 20 V | 4 V | 7 nC | - 55 C | + 150 C | 39 W | Enhancement | U-MOSVIII-H | Reel | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 105 mOhms | 30 V | 2.5 V | 40 nC | - 55 C | + 150 C | 180 W | Enhancement | DTMOSIV-H | Tube | ||||
Mfr: TK16A60W5,S4VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 15.8A 40W FET 600V 1350pF 43nC | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 15.8 A | 190 mOhms | 30 V | 4.5 V | 43 nC | - 55 C | + 150 C | 40 W | Enhancement | DTMOSIV | Tube |