Toshiba - MOSFETs
3.364 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 70 A | 2.6 mOhms | - 10 V, 10 V | 1.5 V | 65 nC | - 55 C | + 175 C | 132 mW | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | TO-220SM-3 | N-Channel | 1 Channel | 100 V | 160 A | 2.4 mOhms | - 20 V, 20 V | 3.5 V | 122 nC | - 55 C | + 175 C | 375 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: TK39J60W5,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 38.8A 270W FET 600V 4100pF 135nC | 0In Stock | Si | Through Hole | TO-3PN-3 | N-Channel | 1 Channel | 600 V | 38.8 A | 55 mOhms | - 30 V, 30 V | 3.7 V | 110 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK4R4P06PL,RQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 60V 3280pF 48.2nC 106A 87W | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 106 A | 3.4 mOhms | - 20 V, 20 V | 1.5 V | 48.2 nC | - 55 C | + 175 C | 87 W | Enhancement | U-MOSIX-H | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 7 A | 48 mOhms | - 20 V, 20 V | 4 V | 7.1 nC | - 55 C | + 175 C | 50 W | Enhancement | AEC-Q101 | Reel | |||||
Mfr: SSM3K361TU,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N Channel 100V 3.5A AECQ MOSFET | 0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 100 V | 3.5 A | 69 mOhms | - 20 V, 10 V | 2.5 V | 3.2 nC | - 55 C | + 175 C | 1.8 W | Enhancement | AEC-Q101 | Reel | ||||
Mfr: TK4R3E06PL,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 60V 3280pF 48.2nC 106A 87W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 106 A | 3.3 mOhms | - 20 V, 20 V | 1.5 V | 48.2 nC | - 55 C | + 175 C | 87 W | Enhancement | U-MOSIX-H | Tube | ||||
Mfr: SSM6N39TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=1.6A VDSS=20V | 0In Stock | Si | SMD/SMT | UF-6 | N-Channel | 2 Channel | 20 V | 1.6 A | 87 mOhms, 87 mOhms | - 10 V, 10 V | 350 mV | 7.5 nC | + 150 C | 500 mW | Enhancement | AEC-Q101 | U-MOSIII | Reel | ||||
0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 30 V | 6 A | 27.6 mOhms | - 20 V, 20 V | 2.5 V | 10.1 nC | - 55 C | + 150 C | 800 mW | Enhancement | AEC-Q101 | U-MOSIV | Reel | ||||
Mfr: TK100S04N1L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 180W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 100 A | 2.3 mOhms | - 20 V, 20 V | 2.5 V | 76 nC | + 175 C | 180 W | Enhancement | AEC-Q101 | Reel | TK100S04N1L,LXHQ(O | ||||
Mfr: TK4K1A60F,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=30W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 2 A | 4.1 Ohms | - 30 V, 30 V | 4 V | 8 nC | - 55 C | + 150 C | 30 W | Enhancement | MOSIX | Tube | ||||
0In Stock | Si | SMD/SMT | USM-3 | P-Channel | 1 Channel | 20 V | 100 mA | 8 Ohms | - 10 V, 20 V | 600 mV | + 150 C | 150 mW | Enhancement | Reel | ||||||||
Mfr: TK17A80W,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 800V 2050pF 32nC 17A 45W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 17 A | 250 mOhms | - 20 V, 20 V | 3 V | 32 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK46E08N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 80V N-Ch PWR FET 80A 103W 37nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 80 A | 8.4 mOhms | - 20 V, 20 V | 37 nC | 103 W | U-MOSVIII-H | Tube | ||||||||
0In Stock | Si | SMD/SMT | CST3-3 | P-Channel | 1 Channel | 20 V | 100 mA | 8 Ohms | - 10 V, 20 V | 600 mV | + 150 C | 100 mW | Enhancement | |||||||||
Mfr: TK11A45D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 10A 40V 25W 410pF 0.029 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 450 V | 11 A | 500 mOhms | - 30 V, 30 V | 2 V | 20 nC | - 55 C | + 150 C | 40 W | Enhancement | MOSVII | Tube | ||||
0In Stock | Si | N-Channel | 1 Channel | U-MOSVIII-H | Reel | |||||||||||||||||
Mfr: SSM3J334R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOSVI FET ID -4A -30VDSS 280pF | 0In Stock | Si | P-Channel | 1 Channel | U-MOSVI | Reel | ||||||||||||||||
Mfr: TK65E10N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 100V N-Ch PWR FET 148A 192W 5400pF | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 148 A | 4 mOhms | - 20 V, 20 V | 2 V | 81 nC | - 55 C | + 150 C | 192 W | Enhancement | U-MOSVIII-H | Tube | ||||
Mfr: TPH4R008NH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 80V 100A 59nC MOSFET | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 80 V | 100 A | 3.3 mOhms | - 20 V, 20 V | 4 V | 59 nC | - 55 C | + 150 C | 78 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TPH11003NL,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOS VII-H 21W 510pF 32A 30V | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 32 A | 12.6 mOhms | - 20 V, 20 V | 2.3 V | 7.5 nC | - 55 C | + 150 C | 21 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TK31N60X,S1F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV-H/S 600V 88mOhmmax(VGS=10V) | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30.8 A | 73 mOhms | - 30 V, 30 V | 3.5 V | 65 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV-H | Tube | ||||
Mfr: TK12A50D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 12A 500V 45W 1350pF 0.52 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 12 A | 520 mOhms | - 30 V, 30 V | 2 V | 25 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK12E60W,S1VX TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 11.5A 110W FET 600V 890pF 25nC | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 11.5 A | 300 mOhms | - 30 V, 30 V | 3.7 V | 25 nC | - 55 C | + 150 C | 110 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: SSM6N37FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET ID=0.25A VDSS=20V | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 250 mA | 1.65 Ohms | - 10 V, 10 V | 350 mV | - 55 C | + 150 C | 300 mW | Enhancement | U-MOSIII | Reel |
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