Toshiba - MOSFETs
3.364 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 27.6 A | 94 mOhms | - 30 V, 30 V | 2.5 V | 75 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: SSM3J35AFS,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=-.25A VDSS=-20V | 0In Stock | Si | SMD/SMT | SOT-416-3 | P-Channel | 1 Channel | 20 V | 250 mA | 1.1 Ohms | - 10 V, 10 V | 1 V | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII | Reel | ||||
Mfr: SSM6N67NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=4A VDSS=30V | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 2 Channel | 30 V | 4 A | 39.1 mOhms | - 8 V, 12 V | 400 mV | 3.2 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | ||
Mfr: SSM6N68NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=4A VDSS=30V | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 2 Channel | 30 V | 4 A | 84 mOhms | - 8 V, 12 V | 1 V | 1.8 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | ||
Mfr: SSM5N15FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs LowON Res MOSFET ID=0.1A VDSS=30V | 0In Stock | Si | SMD/SMT | SOT-353-5 | N-Channel | 2 Channel | 30 V | 100 mA | 2.2 Ohms, 2.2 Ohms | - 20 V, 20 V | 800 mV | - 55 C | + 150 C | 200 mW | Enhancement | MOSVI | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 57 A | 40 mOhms | - 30 V, 30 V | 3 V | 105 nC | - 55 C | + 150 C | 360 W | Enhancement | DTMOSVI | Tube | ||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 90 A | 4.8 mOhms | - 20 V, 20 V | 1.1 V | 22 nC | - 55 C | + 175 C | 69 W | Enhancement | U-MOSIX-H | Reel | ||||
0In Stock | Si | SMD/SMT | DSOP-8 | N-Channel | 1 Channel | 100 V | 150 A | 3.7 mOhms | - 20 V, 20 V | 1.5 V | 67 nC | - 55 C | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 90 A | 4.3 mOhms | - 20 V, 10 V | 1 V | 172 nC | - 55 C | + 175 C | 180 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: TK4P60DB(T6RSS-Q) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 3.7A 600V 80W 540pF 2.0 Ohm | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 3.7 A | 2 Ohms | - 30 V, 30 V | 4.4 V | 11 nC | + 150 C | 80 W | Enhancement | MOSVII | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 13.7 A | 250 mOhms | - 30 V, 30 V | 3 V | 40 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 27.6 A | 110 mOhms | - 30 V, 30 V | 2.5 V | 75 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK11A65W,S5X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs MOSFET NChannel 0.33ohm DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 11.1 A | 330 mOhms | - 30 V, 30 V | 3.5 V | 25 nC | - 55 C | + 150 C | 35 W | Enhancement | DTMOSIV | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 125 mOhms | - 30 V, 30 V | 4 V | 28 nC | + 150 C | 150 W | Enhancement | Tube | ||||||
Mfr: TK160F10N1LLQ(O TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs N-CH SINGLE 100V TO220SM | Not Available Online | Si | SMD/SMT | TO-220-3 | N-Channel | 1 Channel | 100 V | 160 A | 2.4 mOhms | - 20 V, 20 V | 3.5 V | 122 nC | 375 W | Enhancement | |||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 18 A | 139 mOhms | - 20 V, 20 V | 1.5 V | 60 nC | - 55 C | + 150 C | 45 W | Enhancement | MOSVII | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 3 A | 4.9 Ohms | - 30 V, 30 V | 2.5 V | 12 nC | - 55 C | + 150 C | 80 W | Enhancement | MOSVIII | Reel | ||||
0In Stock | Si | SMD/SMT | TSOP-6F | N-Channel, P-Channel | 2 Channel | 20 V, 30 V | 4 A | 39.1 mOhms, 45 mOhms | - 12 V, - 8 V, 6 V, 12 V | 1 V, 1.2 V | 3.2 nC, 6.7 nC | + 150 C | 1.8 W | Enhancement | AEC-Q101 | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 120 mOhms | - 30 V, 30 V | 3 V | 60 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV-H | Tube | ||||
Mfr: TK7Q60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOSIV 600 V 60W 490pF 15nC 7A | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 600 V | 7 A | 500 mOhms | - 30 V, 30 V | 3.7 V | 15 nC | - 55 C | + 150 C | 60 W | Enhancement | DTMOSIV | Tube | |||
Mfr: TK12A53D(STA4,Q,M) TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch MOS 12A 525V 45W 1350pF .58 | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 525 V | 12 A | 580 mOhms | 45 W | MOSVII | Tube | |||||||||
Mfr: TK100E06N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 60V N-Ch PWR FET 1.9mOhm 10V 10uA | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 263 A | 1.9 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 150 C | 255 W | Enhancement | U-MOSVIII-H | Tube | |||
Mfr: TPH6R008QM,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 80V UMOS9-H SOP-Advance(N) 6mohm | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V, 80 V | 107 A | 6 mOhms | - 20 V, 20 V | 3.5 V | 38 nC | + 175 C | 135 W | Enhancement | Reel | |||||
0In Stock | Si | AEC-Q101 | Reel | ||||||||||||||||||
0In Stock | Si | Reel |
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