Toshiba - MOSFETs
3.370 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | 2-10AG1A | N-Channel | 1 Channel | 80 V | 350 A | 830 uOhms | 20 V | 3.5 V | 305 nC | - 55 C | + 175 C | 750 W | Enhancement | Reel | ||||||
Mfr: TPH4R10ANL,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs U-MOSVIII-H 100V 92A 75nC MOSFET | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 100 V | 92 A | 3.3 mOhms | 20 V | 1.5 V | 75 nC | - 55 C | + 150 C | 67 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TK560P60Y,RQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs N-Ch DTMOSV 600V 60W 380pF 7.0A | Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 7 A | 560 mOhms | 30 V | 4 V | 14.5 nC | - 55 C | + 150 C | 60 W | Enhancement | DTMOSV | Reel | ||||
Mfr: SSM6P15FU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/PwrMgmt2n1 US6 (SOT-363) | 0In Stock | Si | SMD/SMT | US-6 | P-Channel | 2 Channel | 30 V | 100 mA | 12 Ohms | 20 V | 1.7 V | - 55 C | + 150 C | 200 mW | Enhancement | AEC-Q101 | MOSVI | Reel | ||||
Mfr: TPH2010FNH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs UMOSVIII 250V 205m (VGS=10V) SOP-ADV | 0In Stock | Si | SMD/SMT | SOP-Advance-8 | N-Channel | 1 Channel | 250 V | 10 A | 168 mOhms | 20 V | 4 V | 7 nC | - 55 C | + 150 C | 42 W | Enhancement | U-MOSVIII-H | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 20 V | 3.9 A | 93 mOhms | 8 V | 1 V | 4.6 nC | - 55 C | + 150 C | 2 W | Enhancement | U-MOSVI | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 38.8 A | 62 mOhms | 30 V | 3 V | 135 nC | - 55 C | + 150 C | 270 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: SSM3K56ACT,L3F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small-signal MOSFET ID: 1.4A, VDSS: 20V | 0In Stock | Si | SMD/SMT | CST3-3 | N-Channel | 1 Channel | 20 V | 1.4 A | 840 mOhms | 8 V | 400 mV | 1 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII-H | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 30 V | 3 A | 95 mOhms | 20 V | 1.3 V | 1.7 nC | - 55 C | + 150 C | 2 W | Enhancement | AEC-Q101 | U-MOSVII-H | Reel | ||||
Mfr: SSM3K388R,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-ch MOSFET, 60 V, 2 A, 82 m at 10 V, SOT-23F | 0In Stock | Si | SMD/SMT | SOT-23F-3 | N-Channel | 1 Channel | 60 V | 2 A | 87 mOhms | 20 V | 2.1 V | 2.66 nC | + 150 C | 1.8 W | Enhancement | Reel | ||||||
Mfr: TJ15S06M3L,LXHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 41W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 15 A | 50 mOhms | - 20 V, 10 V | 3 V | 36 nC | + 175 C | 41 W | Enhancement | AEC-Q101 | Reel | TJ15S06M3L,LXHQ(O | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 7 A | 540 mOhms | 30 V | 3 V | 16 nC | - 55 C | + 150 C | 30 W | Enhancement | DTMOSIV | Tube | |||||
Mfr: TK10A80W,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 800V 1150pF 19nC 9.5A 40W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 9.5 A | 460 mOhms | 20 V | 3 V | 19 nC | - 55 C | + 150 C | 40 W | Enhancement | DTMOSIV | Tube | ||||
0In Stock | Si | SMD/SMT | CST3-3 | N-Channel | 1 Channel | 60 V | 400 mA | 1.05 Ohms | 20 V | 1.1 V | 600 pC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVII-H | Reel | |||||
Mfr: TPW4R50ANH,L1Q TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-CH Mosfet 60V N-CH Mosfet 100V | 0In Stock | Si | SMD/SMT | DSOP-8 | N-Channel | 1 Channel | 100 V | 92 A | 4.5 mOhms | 20 V | 2 V | 58 nC | - 55 C | + 150 C | 142 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TK12Q60W,S1VQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs DTMOSIV 600V 340mOhm 11.5A 100W 890pF | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 600 V | 11.5 A | 265 mOhms | 30 V | 3.7 V | 25 nC | - 55 C | + 150 C | 100 W | DTMOSIV | Reel | |||||
Mfr: TPN8R903NL,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch DTMOS VII-H 22W 630pF 37A 30V | 0In Stock | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 30 V | 37 A | 10.2 mOhms | 20 V | 2.3 V | 9.8 nC | - 55 C | + 150 C | 22 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: SSM6J215FE(TE85L,F TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs P-Ch U-MOS VI FET ID -3.4A -20V 630pF | 0In Stock | Si | SMD/SMT | ES6-6 | P-Channel | 1 Channel | 20 V | 3.4 A | 154 mOhms | 8 V | 1 V | 10.4 nC | - 55 C | + 150 C | 500 mW | Enhancement | U-MOSVI | Reel | ||||
Mfr: TPN4R303NL,L1Q TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs U-MOSVIII-H 30V 63A 6.8nC MOSFET | Not Available Online | Si | SMD/SMT | TSON-8 | N-Channel | 1 Channel | 30 V | 63 A | 6.3 mOhms | 20 V | 2.3 V | 14.8 nC | - 55 C | + 150 C | 34 W | Enhancement | U-MOSVIII-H | Reel | ||||
Mfr: TK22A65X,S5X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs TO-220SIS PD=45W 1MHz PWR MOSFET TRNS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 22 A | 150 mOhms | 30 V | 3.5 V | 50 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSIV-H | Tube | ||||
Mfr: TK15S04N1L,LQ TTI: Not Assigned Toshiba Availability: Not Available OnlineMOSFETs 40W 1MHz Automotive; AEC-Q101 | Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 40 V | 15 A | 13.7 mOhms | 20 V | 2.5 V | 10 nC | - 55 C | + 175 C | 40 W | Enhancement | AEC-Q101 | U-MOSVIII-H | Reel | |||
0In Stock | Si | SMD/SMT | UDFN-6B | N-Channel | 1 Channel | 100 V | 2 A | 125 mOhms | 20 V | 2.5 V | 3.6 nC | + 150 C | 2 W | Enhancement | Reel | |||||||
Mfr: TK095A65Z5,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 650 V 0.095 Ohm N-ch MOSFET TO-220SIS DTMOS | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 29 A | 95 mOhms | 30 V | 4.5 V | 50 nC | + 150 C | 45 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 600 V | 17 A | 155 mOhms | 30 V | 4 V | 24 nC | + 150 C | 40 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | UDFN-6 | P-Channel | 2 Channel | 20 V | 4 A | 157 mOhms | - 12 V, 6 V | 1.2 V | 6.74 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | U-MOSVI | Reel |