Toshiba - MOSFETs
3.364 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SSM6K513NU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Small Low ON Resistane MOSFETs | 0In Stock | Si | SMD/SMT | UDFN-6 | N-Channel | 1 Channel | 30 V | 15 A | 6.5 mOhms | - 20 V, 20 V | 1.1 V | 7.5 nC | - 55 C | + 150 C | 2.5 W | Enhancement | U-MOSIX-H | Reel | ||||
0In Stock | Si | AEC-Q101 | Reel | |||||||||||||||||||
Mfr: SSM3K36TU,LF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs Sm-signal/Hi-Speed UFM (SOT-323F) | 0In Stock | Si | SMD/SMT | UFM-3 | N-Channel | 1 Channel | 20 V | 500 mA | 630 mOhms | - 5 V, 5 V | 1 V | 1.23 nC | - 55 C | + 150 C | 500 mW | Enhancement | AEC-Q101 | MOSIII | Reel | |||
0In Stock | Si | SMD/SMT | DPAK-2 (TO-252-2) | N-Channel | 1 Channel | 80 V | 62 A | 6.9 mOhms | - 20 V, 20 V | 3.5 V | 39 nC | + 175 C | 89 W | Enhancement | Reel | TK6R9P08QM,RQ(S2 | ||||||
Mfr: SSM6K819R,LXHF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs AUTO AEC-Q SS MOS N-ch Logic-Level Gate Drive VDSS:100V IC:10A PD:1.5W TSOP6F | 0In Stock | Si | SMD/SMT | TSOP6F | N-Channel | 1 Channel | 100 V | 10 A | 20.9 mOhms | - 20 V, 20 V | 2.5 V | 8.5 nC | + 175 C | 1.5 W | Enhancement | AEC-Q101 | Reel | SSM6K819R,LXHF(B | ||||
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 600 V | 17 A | 155 mOhms | 30 V | 4 V | 24 nC | + 150 C | 40 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | TOLL-9 | N-Channel | 1 Channel | 600 V | 17 A | 155 mOhms | 30 V | 4 V | 24 nC | + 150 C | 130 W | Enhancement | Reel | |||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 60 V | 260 A | 1.34 mOhms | - 20 V, 20 V | 1.5 V | 91 nC | + 175 C | 170 W | Enhancement | U-MOSIX-H | Reel | ||||||
0In Stock | Si | SMD/SMT | DSOP-8 | N-Channel | 1 Channel | 150 V | 50 A | 15.4 mOhms | - 20 V, 20 V | 2 V | 22 nC | - 55 C | + 150 C | 142 W | Enhancement | U-MOSVIII-H | Reel | |||||
0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 650 V | 30 A | 90 mOhms | - 30 V, 30 V | 3 V | 47 nC | - 55 C | + 150 C | 45 W | Enhancement | DTMOSVI | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 11.5 A | 300 mOhms | - 30 V, 30 V | 2.7 V | 25 nC | - 55 C | + 150 C | 35 W | Enhancement | DTMOSIV | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 15.8 A | 230 mOhms | - 30 V, 30 V | 3 V | 43 nC | - 55 C | + 150 C | 130 W | Enhancement | DTMOSIV | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 25 A | 70 mOhms | - 20 V, 20 V | 1.5 V | 60 nC | - 55 C | + 150 C | 45 W | Enhancement | MOSVII | Tube | |||||
Mfr: SSM14N956L,EFF TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 12V Common Drain MOSFET Rss(on): 1.1mOhm | 0In Stock | Si | SMD/SMT | N-Channel | 2 Channel | 1.35 mOhms | - 8 V, 8 V | 76 nC | + 150 C | 1.33 W | Enhancement | Reel | ||||||||||
Mfr: TPH2R306PL1,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 60V UMOS9-H SOP Advance(N) 2.3mohm | 0In Stock | Reel | ||||||||||||||||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 80 V | 238 A | 1.9 mOhms | 20 V | 3.5 V | 108 nC | + 175 C | 250 W | Enhancement | Reel | |||||||
Mfr: TK4R3A06PL,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 60V 3280pF 48.2nC 68A 36W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 68 A | 3.3 mOhms | - 20 V, 20 V | 1.5 V | 48.2 nC | - 55 C | + 175 C | 36 W | Enhancement | U-MOSIX-H | Tube | ||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 40 V | 270 A | 1 mOhms | - 20 V, 20 V | 2.4 V | 74 nC | + 175 C | 170 W | Enhancement | Reel | TPH1R204PL1,LQ(M | ||||||
0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 30 V | 320 A | 610 uOhms | - 20 V, 20 V | 2.1 V | 81 nC | + 175 C | 170 W | Enhancement | Reel | TPHR9203PL1,LQ(M | ||||||
Mfr: TK10A80W,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch 800V 1150pF 19nC 9.5A 40W | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 9.5 A | 460 mOhms | - 20 V, 20 V | 3 V | 19 nC | - 55 C | + 150 C | 40 W | Enhancement | DTMOSIV | Tube | ||||
Mfr: TK650A60F,S4X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs N-Ch TT-MOSIX 600V 45W 1320pF 11A | 0In Stock | Si | Through Hole | TO-220SIS-3 | N-Channel | 1 Channel | 600 V | 11 A | 650 mOhms | - 30 V, 30 V | 2 V | 34 nC | + 150 C | 45 W | Enhancement | MOSIX | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 30 A | 90 mOhms | - 30 V, 30 V | 4 V | 47 nC | - 55 C | + 150 C | 230 W | Enhancement | DTMOSVI | Reel | |||||
Mfr: TPWR7904PB,L1XHQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 170W 1MHz Automotive; AEC-Q101 | 0In Stock | Si | SMD/SMT | DSOP-Advance-8 | N-Channel | 1 Channel | 40 V | 150 A | 790 uOhms | - 20 V, 20 V | 3 V | 85 nC | - 55 C | + 175 C | 170 W | Enhancement | AEC-Q101 | Reel | TPWR7904PB,L1XHQ(O | |||
Mfr: TPH3R008QM,LQ TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 80V UMOS9-H SOP-Advance(N) 3mohm | 0In Stock | Si | SMD/SMT | SOP-8 | N-Channel | 1 Channel | 80 V | 170 A | 3 mOhms | - 20 V, 20 V | 3.5 V | 71 nC | + 175 C | 180 W | Enhancement | Reel | ||||||
Mfr: TK100E08N1,S1X TTI: Not Assigned Toshiba Availability: 0In StockMOSFETs 80V N-Ch PWR FET 9000pF 130nC 214A | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 214 A | 3.2 mOhms | - 20 V, 20 V | 2 V | 130 nC | - 55 C | + 150 C | 255 W | Enhancement | U-MOSVIII-H | Tube |
