Vishay - MOSFETs
8.196 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI2301CDS-T1-GE3 TTI: SI2301CDS-T1-GE3 Vishay Semiconductors Availability: 12.000In StockMOSFETs -20V Vds 8V Vgs SOT-23 | 12.000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.1 A | 112 mOhms | 8 V | 1 V | 3.3 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI2301CDS-T1-BE3 SI2301CDS-GE3 | |||
Mfr: SI2312CDS-T1-GE3 TTI: SI2312CDS-T1-GE3 Vishay Semiconductors Availability: 6.000In Stock90.000 On Order Expected MOSFETs 20V Vds 8V Vgs SOT-23 | 6.000In Stock90.000 On Order Expected | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 6 A | 31.8 mOhms | 8 V | 1 V | 8.8 nC | - 55 C | + 150 C | 2.1 W | Enhancement | TrenchFET | Reel | SI2312CDS-T1-BE3 SI2312CDS-GE3 SI7621DN-T1-GE3 | |||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 5 A | 33 mOhms | 20 V | 2.5 V | 6.9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2347DS-T1-BE3 | ||||
Mfr: SUM110P06-07L-E3 TTI: SUM110P06-07L-E3 Vishay Semiconductors Availability: 28.000In Stock91.200 On Order Expected MOSFETs 60V 110A 375W | 28.000In Stock91.200 On Order Expected | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 60 V | 110 A | 6.9 mOhms | 20 V | 1 V | 230 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | SUM110P06-07L | |||
Mfr: SI4925DDY-T1-GE3 TTI: SI4925DDY-T1-GE3 Vishay Semiconductors Availability: 60.000In StockMOSFETs -30V Vds 20V Vgs SO-8 | 60.000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 30 V | 8 A | 29 mOhms | 20 V | 1 V | 32 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4925DDY-GE3 | |||
Mfr: SI2302CDS-T1-GE3 TTI: SI2302CDS-T1-GE3 Vishay Semiconductors Availability: 69.000In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 69.000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-BE3 SI2302CDS-GE3 | |||
Mfr: SI4401DDY-T1-GE3 TTI: SI4401DDY-T1-GE3 Vishay Semiconductors Availability: 32.500In Stock30.000 On Order Expected 03-Apr-29 MOSFETs -40V Vds 20V Vgs SO-8 | 32.500In Stock30.000 On Order Expected 03-Apr-29 | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 40 V | 16.1 A | 15 mOhms | 20 V | 1.2 V | 64 nC | - 55 C | + 150 C | 6.3 W | Enhancement | TrenchFET | Reel | SI4401DDY-GE3 | |||
Mfr: SI2369DS-T1-GE3 TTI: SI2369DS-T1-GE3 Vishay Semiconductors Availability: 51.000In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 51.000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 7.6 A | 29 mOhms | 20 V | 2.5 V | 11.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2369DS-T1-BE3 | |||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 60 V | 1.6 A | 345 mOhms | 20 V | 3 V | 2.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2309CDS-T1-BE3 SI2309CDS-GE3 | ||||
Mfr: SI2387DS-T1-GE3 TTI: SI2387DS-T1-GE3 Vishay / Siliconix Availability: 18.000In Stock24.000 On Order Expected 11-Sep-26 MOSFETs P-CH SINGLE -80V SOT23 | 18.000In Stock24.000 On Order Expected 11-Sep-26 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 80 V | 3 A | 242 mOhms | 20 V | 2.5 V | 10.2 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFR9024PBF TTI: IRFR9024PBF Vishay Semiconductors Availability: 825In StockMOSFETs P-Chan 60V 8.8 Amp | 825In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.8 A | 280 mOhms | 20 V | 2 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: IRF9640SPBF TTI: IRF9640SPBF Vishay Semiconductors Availability: 7.600In Stock2.500 On Order Expected 28-Dec-26 MOSFETs P-Chan 200V 11 Amp | 7.600In Stock2.500 On Order Expected 28-Dec-26 | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | 20 V | 2 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SI4401FDY-T1-GE3 TTI: SI4401FDY-T1-GE3 Vishay / Siliconix Availability: 27.500In Stock50.000 On Order Expected MOSFETs -40V Vds 20V Vgs SO-8 | 27.500In Stock50.000 On Order Expected | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 40 V | 14 A | 14.2 mOhms | 20 V | 1 V | 66 nC | - 55 C | + 150 C | 3.2 W | Enhancement | Reel | |||||
Mfr: SI5403DC-T1-GE3 TTI: SI5403DC-T1-GE3 Vishay Semiconductors Availability: 18.000In StockMOSFETs -30V Vds 20V Vgs 1206-8 ChipFET | 18.000In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 1 Channel | 30 V | 6 A | 30 mOhms | 20 V | 1 V | 28 nC | - 55 C | + 150 C | 6.3 W | Enhancement | TrenchFET | Reel | SI5403DC-GE3 | |||
Mfr: SI7465DP-T1-E3 TTI: SI7465DP-T1-E3 Vishay Semiconductors Availability: 18.000In Stock27.000 On Order Expected MOSFETs -60V Vds 20V Vgs PowerPAK SO-8 | 18.000In Stock27.000 On Order Expected | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 60 V | 3.2 A | 64 mOhms | 20 V | 3 V | 26 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI7465DP-E3 | |||
Mfr: SI2302DDS-T1-GE3 TTI: SI2302DDS-T1-GE3 Vishay Semiconductors Availability: 51.000In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 51.000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302DDS-T1-BE3 | |||
Mfr: SI9634DY-T1-GE3 TTI: SI9634DY-T1-GE3 Vishay / Siliconix Availability: 25.000In StockMOSFETs N-CH DUAL 60V SO-8 | 25.000In Stock | Si | SMD/SMT | SO-8 | 1 Channel | 60 V | 8 A | 29 mOhms | 20 V | 3 V | 11 nC | - 55 C | + 150 C | 3.6 W | Enhancement | Reel | ||||||
Mfr: SI4403DDY-T1-GE3 TTI: SI4403DDY-T1-GE3 Vishay / Siliconix Availability: 37.500In Stock40.000 On Order Expected MOSFETs -20V Vds 8V Vgs SO-8 | 37.500In Stock40.000 On Order Expected | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 20 V | 15.4 A | 14 mOhms | 8 V | 1 V | 66 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Mfr: SI4848DY-T1-GE3 TTI: SI4848DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 3.7 A | 85 mOhms | 20 V | 2 V | 21 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI4848DY-GE3 | |||
2.750In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF-BE3 | |||||
Mfr: SI4134DY-T1-GE3 TTI: SI4134DY-T1-GE3 Vishay Semiconductors Availability: 70.000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 70.000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 14 A | 14 mOhms | 20 V | 1.2 V | 23 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4134DY-GE3 | |||
Mfr: SUP53P06-20-E3 TTI: SUP53P06-20-E3 Vishay Semiconductors Availability: 2.500In StockMOSFETs 60V 53A 104.2W 19.5mohm @ 10V | 2.500In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 53 A | 16 mOhms | 20 V | 3 V | 115 nC | - 55 C | + 150 C | 104.2 W | Enhancement | TrenchFET | Tube | ||||
Mfr: SI3476DV-T1-GE3 TTI: SI3476DV-T1-GE3 Vishay Semiconductors Availability: 9.000In StockMOSFETs 80V Vds 20V Vgs TSOP-6 | 9.000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 80 V | 4.6 A | 93 mOhms | 20 V | 1.2 V | 4.9 nC | - 55 C | + 150 C | 3.6 W | Enhancement | TrenchFET | Reel | SI3476DV-T1-BE3 | |||
Mfr: IRFL110TRPBF TTI: IRFL110TRPBF Vishay Semiconductors Availability: 80.000In StockMOSFETs N-Chan 100V 1.5 Amp | 80.000In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL110TRPBF-BE3 | ||||
Mfr: SI4936CDY-T1-GE3 TTI: SI4936CDY-T1-GE3 Vishay Semiconductors Availability: 2.500In Stock25.000 On Order Expected MOSFETs 30V Vds 20V Vgs SO-8 | 2.500In Stock25.000 On Order Expected | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 5.8 A | 40 mOhms | 20 V | 3 V | 9 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | SI4936CDY-GE3 |