Vishay - MOSFETs
8.235 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SI2318CDS-T1-GE3 TTI: SI2318CDS-T1-GE3 Vishay Semiconductors Availability: 129.000In Stock150.000 On Order Expected MOSFETs 40V Vds 20V Vgs SOT-23 | 129.000In Stock150.000 On Order Expected | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 5.6 A | 42 mOhms | 20 V | 2.5 V | 2.9 nC | - 55 C | + 150 C | 2.1 W | Enhancement | TrenchFET | Reel | SI2318CDS-T1-BE3 SI2318CDS-GE3 | |||
Mfr: SI2309CDS-T1-GE3 TTI: SI2309CDS-T1-GE3 Vishay Semiconductors Availability: 18.000In Stock141.000 On Order Expected MOSFETs -60V Vds 20V Vgs SOT-23 | 18.000In Stock141.000 On Order Expected | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 60 V | 1.6 A | 345 mOhms | 20 V | 3 V | 2.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2309CDS-T1-BE3 SI2309CDS-GE3 | |||
Mfr: SI2369DS-T1-GE3 TTI: SI2369DS-T1-GE3 Vishay Semiconductors Availability: 78.000In Stock102.000 On Order Expected MOSFETs -30V Vds 20V Vgs SOT-23 | 78.000In Stock102.000 On Order Expected | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 7.6 A | 29 mOhms | 20 V | 2.5 V | 11.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2369DS-T1-BE3 | |||
Mfr: SI4401DDY-T1-GE3 TTI: SI4401DDY-T1-GE3 Vishay Semiconductors Availability: 5.000In Stock145.000 On Order Expected MOSFETs -40V Vds 20V Vgs SO-8 | 5.000In Stock145.000 On Order Expected | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 40 V | 16.1 A | 15 mOhms | 20 V | 1.2 V | 64 nC | - 55 C | + 150 C | 6.3 W | Enhancement | TrenchFET | Reel | SI4401DDY-GE3 | |||
Mfr: SI2302CDS-T1-GE3 TTI: SI2302CDS-T1-GE3 Vishay Semiconductors Availability: 87.000In Stock120.000 On Order Expected MOSFETs 20V Vds 8V Vgs SOT-23 | 87.000In Stock120.000 On Order Expected | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-BE3 SI2302CDS-GE3 | |||
Mfr: SI2347DS-T1-GE3 TTI: SI2347DS-T1-GE3 Vishay Semiconductors Availability: 12.000In Stock120.000 On Order Expected MOSFETs -30V Vds 20V Vgs SOT-23 | 12.000In Stock120.000 On Order Expected | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 5 A | 33 mOhms | 20 V | 2.5 V | 6.9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2347DS-T1-BE3 | |||
Mfr: SI2303CDS-T1-GE3 TTI: SI2303CDS-T1-GE3 Vishay Semiconductors Availability: 3.000In Stock165.000 On Order Expected MOSFETs -30V Vds 20V Vgs SOT-23 | 3.000In Stock165.000 On Order Expected | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | 20 V | 3 V | 2 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | SI2303CDS-T1-BE3 SI2303BDS-T1-E3-S | |||
Mfr: SUM110P06-07L-E3 TTI: SUM110P06-07L-E3 Vishay Semiconductors Availability: 15.200In Stock59.200 On Order Expected MOSFETs 60V 110A 375W | 15.200In Stock59.200 On Order Expected | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 60 V | 110 A | 6.9 mOhms | 20 V | 1 V | 230 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | SUM110P06-07L | |||
Mfr: SI4925DDY-T1-GE3 TTI: SI4925DDY-T1-GE3 Vishay Semiconductors Availability: 47.500In Stock40.000 On Order Expected MOSFETs -30V Vds 20V Vgs SO-8 | 47.500In Stock40.000 On Order Expected | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 30 V | 8 A | 29 mOhms | 20 V | 1 V | 32 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4925DDY-GE3 | |||
Mfr: IRFL9014TRPBF TTI: IRFL9014TRPBF Vishay Semiconductors Availability: 5.000In Stock90.000 On Order Expected MOSFETs P-Chan 60V 1.1 Amp | 5.000In Stock90.000 On Order Expected | Si | SMD/SMT | SOT-223-4 | P-Channel | 1 Channel | 60 V | 1.8 A | 500 mOhms | 20 V | 4 V | 12 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL9014TRPBF-BE3 | ||||
Mfr: SI2312CDS-T1-GE3 TTI: SI2312CDS-T1-GE3 Vishay Semiconductors Availability: 63.000In Stock114.000 On Order Expected MOSFETs 20V Vds 8V Vgs SOT-23 | 63.000In Stock114.000 On Order Expected | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 6 A | 31.8 mOhms | 8 V | 1 V | 8.8 nC | - 55 C | + 150 C | 2.1 W | Enhancement | TrenchFET | Reel | SI2312CDS-T1-BE3 SI2312CDS-GE3 SI7621DN-T1-GE3 | |||
Mfr: IRFBG30PBF TTI: IRFBG30PBF Vishay Semiconductors Availability: 100In Stock3.000 On Order Expected MOSFETs N-CH SINGLE 1KV TO-220 | 100In Stock3.000 On Order Expected | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | 20 V | 4 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBG30PBF-BE3 | ||||
Mfr: SI7145DP-T1-GE3 TTI: SI7145DP-T1-GE3 Vishay Semiconductors Availability: 24.000In StockMOSFETs -30V Vds 20V Vgs PowerPAK SO-8 | 24.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 60 A | 2.6 mOhms | 20 V | 2.3 V | 275 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7145DP-GE3 | |||
Mfr: SI2393DS-T1-GE3 TTI: SI2393DS-T1-GE3 Vishay Semiconductors Availability: 24.000In Stock3.000 On Order Expected 05-Jan-27 MOSFETs 30-V (D-S) MOSFET P-CHANNEL | 24.000In Stock3.000 On Order Expected 05-Jan-27 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 7.5 A | 22.7 mOhms | - 20 V, 16 V | 2.2 V | 16.8 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFI640GPBF TTI: IRFI640GPBF Vishay Semiconductors Availability: 2.750In Stock6.000 On Order Expected MOSFETs N-CH SINGLE 200V TO220 | 2.750In Stock6.000 On Order Expected | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9.8 A | 180 mOhms | 20 V | 2 V | 70 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: SI4435DDY-T1-GE3 TTI: SI4435DDY-T1-GE3 Vishay Semiconductors Availability: 145.000In StockMOSFETs -30V Vds 20V Vgs SO-8 | 145.000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 11.4 A | 24 mOhms | 20 V | 1 V | 50 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4435DDY-GE3 | |||
Mfr: SIA440DJ-T1-GE3 TTI: SIA440DJ-T1-GE3 Vishay Semiconductors Availability: 72.000In StockMOSFETs 40V Vds 12V Vgs PowerPAK SC-70 | 72.000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 40 V | 12 A | 26 mOhms | 12 V | 600 mV | 21.5 nC | - 50 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUM110P04-05-E3 TTI: SUM110P04-05-E3 Vishay Semiconductors Availability: 12.000In StockMOSFETs 40V 110A 375W | 12.000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 40 V | 110 A | 5 mOhms | 20 V | 2 V | 185 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFP460PBF TTI: IRFP460PBF Vishay Semiconductors Availability: 4.525In StockMOSFETs N-CH SINGLE 500V TO-247 | 4.525In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SI4134DY-T1-GE3 TTI: SI4134DY-T1-GE3 Vishay Semiconductors Availability: 70.000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 70.000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 14 A | 14 mOhms | 20 V | 1.2 V | 23 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4134DY-GE3 | |||
Mfr: SUP53P06-20-E3 TTI: SUP53P06-20-E3 Vishay Semiconductors Availability: 2.500In StockMOSFETs 60V 53A 104.2W 19.5mohm @ 10V | 2.500In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 53 A | 16 mOhms | 20 V | 3 V | 115 nC | - 55 C | + 150 C | 104.2 W | Enhancement | TrenchFET | Tube | ||||
2.050In Stock4.000 On Order Expected 25-Mar-27 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF-BE3 | |||||
Mfr: SI4848DY-T1-GE3 TTI: SI4848DY-T1-GE3 Vishay Semiconductors Availability: 82.500In Stock150.000 On Order Expected MOSFETs 150V Vds 20V Vgs SO-8 | 82.500In Stock150.000 On Order Expected | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 3.7 A | 85 mOhms | 20 V | 2 V | 21 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI4848DY-GE3 | |||
Mfr: SI4848DY-T1-E3 TTI: SI4848DY-T1-E3 Vishay Semiconductors Availability: 0In Stock57.500 On Order Expected MOSFETs 150V Vds 20V Vgs SO-8 | 0In Stock57.500 On Order Expected | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 3.7 A | 85 mOhms | 20 V | 2 V | 21 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI4848DY-E3 | |||
Mfr: IRFL110TRPBF TTI: IRFL110TRPBF Vishay Semiconductors Availability: 95.000In StockMOSFETs N-Chan 100V 1.5 Amp | 95.000In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL110TRPBF-BE3 |