Vishay - MOSFETs
8.167 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI1922EDH-T1-GE3 TTI: SI1922EDH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.3 A | 198 mOhms | - 8 V, 8 V | 1 V | 2.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1922EDH-T1-BE3 SI1988DH-T1-GE3 | |||
Mfr: SI2324DS-T1-GE3 TTI: SI2324DS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 2.3 A | 234 mOhms | - 20 V, 20 V | 1.2 V | 10.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2324DS-T1-BE3 | |||
Mfr: SI4850EY-T1-E3 TTI: SI4850EY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 8.5 A | 22 mOhms | - 20 V, 20 V | 1 V | 27 nC | - 55 C | + 175 C | 3.3 W | Enhancement | TrenchFET | Reel | SI4850EY-E3 | |||
0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 150 V | 2.2 A | 380 mOhms | - 20 V, 20 V | 4 V | 1.65 nC | - 55 C | + 150 C | 3.6 W | Enhancement | ThunderFET | Reel | SI3440ADV-T1-BE3 | ||||
Mfr: SI4214DDY-T1-GE3 TTI: SI4214DDY-T1-GE3 Vishay Semiconductors Availability: 0In Stock47.500 On Order Expected MOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock47.500 On Order Expected | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 8.5 A | 19.5 mOhms | - 20 V, 20 V | 1.2 V | 14.5 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4920DY-T1-E3-S | |||
Mfr: SI7489DP-T1-E3 TTI: SI7489DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 100 V | 28 A | 41 mOhms | - 20 V, 20 V | 1 V | 106 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7489DP-E3 | |||
Mfr: SIRA58ADP-T1-RE3 TTI: SIRA58ADP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20/-16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 109 A | 2.65 mOhms | - 16 V, 20 V | 1.1 V | 61 nC | - 55 C | + 150 C | 56.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI4056DY-T1-GE3 TTI: SI4056DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT SI40 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 11.1 A | 17 mOhms | - 20 V, 20 V | 1.5 V | 29.5 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4056DY-GE3 | |||
0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 19 A | 200 mOhms | - 20 V, 20 V | 2 V | 61 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | ||||||
Mfr: SI3443DDV-T1-GE3 TTI: SI3443DDV-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 4 A | 90 mOhms | - 12 V, 12 V | 1.5 V | 9 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3443DDV-T1-BE3 | |||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 4.8 A | 45 mOhms | - 12 V, 12 V | 1.5 V | 10.6 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2371EDS-T1-BE3 | ||||
Mfr: SIA485DJ-T1-GE3 TTI: SIA485DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -150V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 150 V | 1.6 A | 2.7 Ohms | - 20 V, 20 V | 4.5 V | 6.3 nC | - 55 C | + 150 C | 15.6 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR510DP-T1-RE3 TTI: SIR510DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 100V PPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 126 A | 3.6 mOhms | - 20 V, 20 V | 4 V | 54 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 60 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBC40PBF-BE3 | |||||
Mfr: SIS415DNT-T1-GE3 TTI: SIS415DNT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -20V Vds 12V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 3.3 mOhms | - 12 V, 12 V | 1.5 V | 180 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRF540STRLPBF TTI: IRF540STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 100V TO263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | - 20 V, 20 V | 2 V | 72 nC | - 55 C | + 175 C | 3.7 W | Enhancement | Reel | |||||
Mfr: IRFR9214PBF TTI: IRFR9214PBF Vishay Semiconductors Availability: 0In Stock3.000 On Order Expected 29-Jun-27 MOSFETs P-Chan 250V 2.7 Amp | 0In Stock3.000 On Order Expected 29-Jun-27 | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 250 V | 2.7 A | 3 Ohms | - 20 V, 20 V | 4 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||
Mfr: SIA929DJ-T1-GE3 TTI: SIA929DJ-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds 12V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 30 V | 4.5 A | 52 mOhms, 52 mOhms | - 12 V, 12 V | 1.1 V | 21 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA929DJ-GE3 | |||
Mfr: SIR826ADP-T1-GE3 TTI: SIR826ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 60 A | 4.6 mOhms | - 20 V, 20 V | 1.2 V | 86 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI7431DP-T1-GE3 TTI: SI7431DP-T1-GE3 Vishay Semiconductors MOSFETs -200V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 174 mOhms | - 20 V, 20 V | 4 V | 135 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7431DP-GE3 | |||
Mfr: SISS61DN-T1-GE3 TTI: SISS61DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs Pch 20V Vds 8V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 111.9 A | 2.9 mOhms | - 8 V, 8 V | 900 mV | 154 nC | - 55 C | + 150 C | 65.8 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 200 V | 1.9 A | 3 Ohms | - 20 V, 20 V | 4 V | 8.9 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | ||||||
Mfr: SI7430DP-T1-E3 TTI: SI7430DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 26 A | 45 mOhms | - 20 V, 20 V | 3.5 V | 43 nC | - 55 C | + 150 C | 64 W | Enhancement | TrenchFET | Reel | SI7430DP-E3 | |||
Mfr: SI7611DN-T1-GE3 TTI: SI7611DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -40V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 40 V | 18 A | 25 mOhms | - 20 V, 20 V | 1 V | 41 nC | - 50 C | + 150 C | 39 W | Enhancement | TrenchFET | Reel | SI7611DN-GE3 | |||
Mfr: SI7820DN-T1-GE3 TTI: SI7820DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 200 V | 1.7 A | 240 mOhms | - 20 V, 20 V | 2 V | 12.1 nC | - 55 C | + 150 C | 1.5 W | Enhancement | TrenchFET | Reel | SI7820DN-GE3 |
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