Vishay - MOSFETs
8.167 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRL640STRLPBF TTI: IRL640STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 200V 17 Amp | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 17 A | 180 mOhms | - 10 V, 10 V | 1 V | 66 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: SIR640ADP-T1-GE3 TTI: SIR640ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 100 A | 1.65 mOhms | - 20 V, 20 V | 900 mV | 90 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIB452DK-T1-GE3 TTI: SIB452DK-T1-GE3 Vishay Semiconductors Availability: 0In Stock3.000 On Order Expected 24-Jul-26 MOSFETs 190V Vds 16V Vgs PowerPAK SC-75 | 0In Stock3.000 On Order Expected 24-Jul-26 | Si | SMD/SMT | SC-75-6 | N-Channel | 1 Channel | 190 V | 1.5 A | 2.4 Ohms | - 16 V, 16 V | 600 mV | 6.5 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | SIB452DK-GE3 | |||
Mfr: SI4100DY-T1-E3 TTI: SI4100DY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 6.8 A | 63 mOhms | - 20 V, 20 V | 2 V | 20 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4100DY-E3 | |||
Mfr: SI8821EDB-T2-E1 TTI: SI8821EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 12V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 30 V | 2.3 A | 105 mOhms | - 12 V, 12 V | 1.3 V | 17 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR662DP-T1-GE3 TTI: SIR662DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V 2.7mOhm@10V 60A N-Ch MV T-FET | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 100 A | 2.2 mOhms | - 20 V, 20 V | 1 V | 96 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR662DP-GE3 | |||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 3.1 A | 102 mOhms | - 20 V, 20 V | 3 V | 2.9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2392ADS-T1-BE3 | ||||
Mfr: SIS413DN-T1-GE3 TTI: SIS413DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 18 A | 9.4 mOhms | - 10 V, 10 V | 1 V | 73 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUM90140E-GE3 TTI: SUM90140E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 90 A | 13.8 mOhms | - 20 V, 20 V | 2 V | 96 nC | - 55 C | + 175 C | 375 W | Enhancement | ThunderFET | Reel | ||||
Mfr: IRFR310TRPBF TTI: IRFR310TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 400V 1.7 Amp | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 400 V | 1.7 A | 3.6 Ohms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR310TRPBF-BE3 | ||||
Mfr: SI2366DS-T1-GE3 TTI: SI2366DS-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 5.8 A | 36 mOhms | - 20 V, 20 V | 2.5 V | 3.2 nC | - 55 C | + 150 C | 2.1 W | Enhancement | TrenchFET | Reel | SI2366DS-T1-BE3 SI2366DS-GE3 | |||
0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 9 A | 28 mOhms | - 12 V, 12 V | 1.2 V | 30 nC | - 50 C | + 150 C | 15.6 W | Enhancement | TrenchFET | Reel | |||||
Mfr: IRF640STRRPBF TTI: IRF640STRRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 200V 18 Amp | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | - 20 V, 20 V | 2 V | 70 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: SI4490DY-T1-GE3 TTI: SI4490DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 200 V | 4 A | 80 mOhms | - 20 V, 20 V | 2 V | 42 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4490DY-GE3 | |||
Mfr: IRFB9N60APBF TTI: IRFB9N60APBF Vishay Semiconductors Availability: 0In Stock800 On Order Expected 23-Sep-26 MOSFETs N-CH SINGLE 600V TO220 | 0In Stock800 On Order Expected 23-Sep-26 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | - 30 V, 30 V | 4 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | IRFB9N60APBF-BE3 | ||||
Mfr: SIR681DP-T1-RE3 TTI: SIR681DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CH SINGLE -80V PPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | P-Channel | 1 Channel | 80 V | 71.9 A | 11.2 mOhms | - 20 V, 20 V | 2.6 V | 31.7 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 6.1 A | 500 mOhms | - 20 V, 20 V | 4 V | 44 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.8 A | 280 mOhms | - 20 V, 20 V | 4 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR9024TRPBF-BE3 | |||||
Mfr: SI2367DS-T1-GE3 TTI: SI2367DS-T1-GE3 Vishay Semiconductors Availability: 0In Stock3.000 On Order Expected 21-Jul-26 MOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock3.000 On Order Expected 21-Jul-26 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.8 A | 66 mOhms | - 8 V, 8 V | 1 V | 9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2367DS-T1-BE3 SI2367DS-GE3 | |||
Mfr: SIB457EDK-T1-GE3 TTI: SIB457EDK-T1-GE3 Vishay Semiconductors MOSFETs -20V Vds 8V Vgs PowerPAK SC-75 | 0In Stock | Si | SMD/SMT | SC-75-6 | P-Channel | 1 Channel | 20 V | 9 A | 29 mOhms | - 8 V, 8 V | 1 V | 44 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | SIB457EDK-GE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 85 A | 8.5 mOhms | - 20 V, 20 V | 1 V | 160 nC | - 55 C | + 175 C | 250 W | Enhancement | TrenchFET | Bulk | |||||
Mfr: SUM80090E-GE3 TTI: SUM80090E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 150V Vds 20V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 150 V | 128 A | 7.5 mOhms | - 20 V, 20 V | 2 V | 95 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 7.9 A | 280 mOhms | - 20 V, 20 V | 2 V | 68 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | ||||||
Mfr: SIDR5802EP-T1-RE3 TTI: SIDR5802EP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 80V PPAKSO08DC | 0In Stock | Si | SMD/SMT | PowerPAK SO-8DC | N-Channel | 1 Channel | 80 V | 153 A | 2.9 mOhms | - 20 V, 20 V | 4 V | 28 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | |||||
Mfr: SUM60061EL-GE3 TTI: SUM60061EL-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CH SINGLE -80V TO-263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 80 V | 150 A | 8.6 mOhms | - 20 V, 20 V | 2.5 V | 218 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel |
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