Vishay - MOSFETs
8.196 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFL110TRPBF TTI: IRFL110TRPBF Vishay Semiconductors Availability: 80.000In StockMOSFETs N-Chan 100V 1.5 Amp | 80.000In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL110TRPBF-BE3 | ||||
Mfr: SI4936CDY-T1-GE3 TTI: SI4936CDY-T1-GE3 Vishay Semiconductors Availability: 2.500In Stock25.000 On Order Expected MOSFETs 30V Vds 20V Vgs SO-8 | 2.500In Stock25.000 On Order Expected | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 5.8 A | 40 mOhms | 20 V | 3 V | 9 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | SI4936CDY-GE3 | |||
Mfr: SI1553CDL-T1-GE3 TTI: SI1553CDL-T1-GE3 Vishay Semiconductors Availability: 18.000In StockMOSFETs -20V Vds 12V Vgs SC70-6 N&P PAIR | 18.000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 20 V | 700 mA | 390 mOhms, 850 mOhms | 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 340 mW | Enhancement | TrenchFET | Reel | SI1553CDL-T1-BE3 SI1553DL-T1-GE3 SI1563DH-T1-GE3 SI1563EDH-T1-GE3 SI1555DL-T1-E3-S | |||
Mfr: IRF9520PBF TTI: IRF9520PBF Vishay Semiconductors Availability: 7.600In StockMOSFETs P-CH SINGLE -100V TO220 | 7.600In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 6.8 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | IRF9520PBF-BE3 | ||||
Mfr: SI4848DY-T1-E3 TTI: SI4848DY-T1-E3 Vishay Semiconductors Availability: 7.500In StockMOSFETs 150V Vds 20V Vgs SO-8 | 7.500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 3.7 A | 85 mOhms | 20 V | 2 V | 21 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI4848DY-E3 | |||
Mfr: SI2319DDS-T1-GE3 TTI: SI2319DDS-T1-GE3 Vishay / Siliconix Availability: 15.000In Stock12.000 On Order Expected 11-Sep-26 MOSFETs -40V Vds 20V Vgs SOT-23 | 15.000In Stock12.000 On Order Expected 11-Sep-26 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 40 V | 3.6 A | 75 mOhms | 20 V | 1 V | 12.5 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | |||||
Mfr: IRFL9014TRPBF TTI: IRFL9014TRPBF Vishay Semiconductors Availability: 5.000In StockMOSFETs P-Chan 60V 1.1 Amp | 5.000In Stock | Si | SMD/SMT | SOT-223-4 | P-Channel | 1 Channel | 60 V | 1.8 A | 500 mOhms | 20 V | 4 V | 12 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL9014TRPBF-BE3 | ||||
Mfr: SI4425DDY-T1-GE3 TTI: SI4425DDY-T1-GE3 Vishay Semiconductors Availability: 10.000In StockMOSFETs -30V Vds 20V Vgs SO-8 | 10.000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 19.7 A | 9.8 mOhms | 20 V | 1.2 V | 53 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4425DDY-GE3 | |||
Mfr: SI1308EDL-T1-GE3 TTI: SI1308EDL-T1-GE3 Vishay Semiconductors Availability: 102.000In StockMOSFETs 30V Vds 12V Vgs SC70-3 | 102.000In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 30 V | 1.5 A | 132 mOhms | 12 V | 1.5 V | 2.7 nC | - 55 C | + 150 C | 400 mW | Enhancement | TrenchFET | Reel | SI1308EDL-T1-BE3 SI1304BDL-T1-GE3 SI1300BDL-T1-GE3 | |||
Mfr: SI4435FDY-T1-GE3 TTI: SI4435FDY-T1-GE3 Vishay / Siliconix Availability: 35.000In StockMOSFETs -30V Vds 20V Vgs SO-8 | 35.000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 12.6 A | 30 mOhms | 20 V | 2.2 V | 13.5 nC | - 55 C | + 150 C | 4.8 W | Enhancement | Reel | |||||
Mfr: SI4848DY-T1-GE3 TTI: SI4848DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 3.7 A | 85 mOhms | 20 V | 2 V | 21 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI4848DY-GE3 | |||
2.750In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF-BE3 | |||||
Mfr: SI4134DY-T1-GE3 TTI: SI4134DY-T1-GE3 Vishay Semiconductors Availability: 70.000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 70.000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 14 A | 14 mOhms | 20 V | 1.2 V | 23 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4134DY-GE3 | |||
Mfr: SUP53P06-20-E3 TTI: SUP53P06-20-E3 Vishay Semiconductors Availability: 2.500In StockMOSFETs 60V 53A 104.2W 19.5mohm @ 10V | 2.500In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 53 A | 16 mOhms | 20 V | 3 V | 115 nC | - 55 C | + 150 C | 104.2 W | Enhancement | TrenchFET | Tube | ||||
Mfr: SIA440DJ-T1-GE3 TTI: SIA440DJ-T1-GE3 Vishay Semiconductors Availability: 60.000In StockMOSFETs 40V Vds 12V Vgs PowerPAK SC-70 | 60.000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 40 V | 12 A | 26 mOhms | 12 V | 600 mV | 21.5 nC | - 50 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI4435DDY-T1-GE3 TTI: SI4435DDY-T1-GE3 Vishay Semiconductors Availability: 152.500In StockMOSFETs -30V Vds 20V Vgs SO-8 | 152.500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 11.4 A | 24 mOhms | 20 V | 1 V | 50 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4435DDY-GE3 | |||
3.600In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | 20 V | 4 V | 72 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRF540PBF-BE3 | |||||
Mfr: SI2393DS-T1-GE3 TTI: SI2393DS-T1-GE3 Vishay Semiconductors Availability: 24.000In Stock6.000 On Order Expected 05-Jan-27 MOSFETs 30-V (D-S) MOSFET P-CHANNEL | 24.000In Stock6.000 On Order Expected 05-Jan-27 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 7.5 A | 22.7 mOhms | - 20 V, 16 V | 2.2 V | 16.8 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4564DY-T1-GE3 TTI: SI4564DY-T1-GE3 Vishay Semiconductors Availability: 2.500In StockMOSFETs N/P-CH 40V SO-8 | 2.500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel, P-Channel | 2 Channel | 40 V | 9.2 A, 10 A | 17.5 mOhms, 21 mOhms | 20 V | 800 mV, 1.2 V | 20.5 nC, 41.5 nC | - 55 C | + 150 C | 3.1 W, 3.2 W | Enhancement | TrenchFET | Reel | SI4542DY-T1-E3-S | |||
Mfr: IRFP360PBF TTI: IRFP360PBF Vishay Semiconductors Availability: 1.500In Stock1.000 On Order Expected 25-Jan-27 MOSFETs N-CH SINGLE 400V TO247 | 1.500In Stock1.000 On Order Expected 25-Jan-27 | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 400 V | 23 A | 200 mOhms | 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: IRFR9014PBF TTI: IRFR9014PBF Vishay Semiconductors Availability: 1.800In StockMOSFETs P-CH SINGLE -60V TO252 | 1.800In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 5.1 A | 500 mOhms | 20 V | 2 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: SI1416EDH-T1-GE3 TTI: SI1416EDH-T1-GE3 Vishay Semiconductors Availability: 24.000In StockMOSFETs 30V Vds 12V Vgs SC70-6 | 24.000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 30 V | 3.9 A | 58 mOhms | 12 V | 1.4 V | 12 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1416EDH-T1-BE3 SI1410EDH-T1-E3-S SI1410EDH-T1-GE3 SI1426DH-T1-E3-S | |||
Mfr: SI3456DDV-T1-GE3 TTI: SI3456DDV-T1-GE3 Vishay Semiconductors Availability: 24.000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 24.000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 6.3 A | 40 mOhms | 20 V | 3 V | 2.8 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3456DDV-T1-BE3 SI3456DDV-GE3 | |||
Mfr: SUD50P08-25L-E3 TTI: SUD50P08-25L-E3 Vishay Semiconductors Availability: 2.000In StockMOSFETs 80V 50A 136W 25.2mohm @ 10V | 2.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 80 V | 50 A | 25.2 mOhms | 20 V | 1 V | 105 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD50P08-25L-BE3 | |||
Mfr: SIR4409DP-T1-RE3 TTI: SIR4409DP-T1-RE3 Vishay / Siliconix Availability: 6.000In StockMOSFETs P-CH SINGLE -40V PPAK SO-8 | 6.000In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 40 V | 60.6 A | 9 mOhms | 20 V | 2.3 V | 38.1 nC | - 55 C | + 150 C | 59.5 W | Enhancement | Reel |