Vishay - MOSFETs
8.168 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SUD19P06-60-GE3 TTI: SUD19P06-60-GE3 Vishay Semiconductors Availability: 12.000In StockMOSFETs 60V 19A 38.5W 60mohm @ 10V | 12.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 19 A | 60 mOhms | - 20 V, 20 V | 3 V | 40 nC | - 55 C | + 150 C | 113 W | Enhancement | TrenchFET | Reel | SUD19P06-60-BE3 | |||
Mfr: SUD40N08-16-E3 TTI: SUD40N08-16-E3 Vishay / Siliconix Availability: 6.000In StockMOSFETs 80V 40A 100W | 6.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 80 V | 40 A | 16 mOhms | - 20 V, 20 V | 2 V | 42 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4425FDY-T1-GE3 TTI: SI4425FDY-T1-GE3 Vishay / Siliconix Availability: 2.500In StockMOSFETs P-CH SINGLE -30V SO-8 | 2.500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 18.3 A | 9.5 mOhms | - 20 V, 16 V | 2.2 V | 27 nC | - 55 C | + 150 C | 4.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4174DY-T1-GE3 TTI: SI4174DY-T1-GE3 Vishay Semiconductors Availability: 5.000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 5.000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 17 A | 9.5 mOhms | - 20 V, 20 V | 1 V | 27 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4174DY-GE3 | |||
Mfr: SI2374DS-T1-GE3 TTI: SI2374DS-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 6.000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 5.9 A | 30 mOhms | - 8 V, 8 V | 1 V | 7.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2374DS-T1-BE3 | |||
Mfr: IRFL210TRPBF TTI: IRFL210TRPBF Vishay Semiconductors Availability: 2.500In Stock65.000 On Order Expected MOSFETs N-Chan 200V 0.96 Amp | 2.500In Stock65.000 On Order Expected | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 200 V | 960 mA | 1.5 Ohms | - 20 V, 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL210TRPBF-BE3 | ||||
Mfr: IRFR9014PBF TTI: IRFR9014PBF Vishay Semiconductors Availability: 1.800In StockMOSFETs P-CH SINGLE -60V TO252 | 1.800In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 5.1 A | 500 mOhms | - 20 V, 20 V | 2 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: SI1902CDL-T1-GE3 TTI: SI1902CDL-T1-GE3 Vishay Semiconductors Availability: 9.000In StockMOSFETs 20V Vds 12V Vgs SC70-6 | 9.000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.1 A | 235 mOhms | - 12 V, 12 V | 1.5 V | 2 nC | - 55 C | + 150 C | 420 mW | Enhancement | TrenchFET | Reel | SI1902CDL-T1-BE3 SI1958DH-T1-GE3 | |||
Mfr: IRFP360PBF TTI: IRFP360PBF Vishay Semiconductors Availability: 1.000In StockMOSFETs N-CH SINGLE 400V TO247 | 1.000In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 400 V | 23 A | 200 mOhms | - 20 V, 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SUD50P08-25L-E3 TTI: SUD50P08-25L-E3 Vishay Semiconductors Availability: 4.000In StockMOSFETs 80V 50A 136W 25.2mohm @ 10V | 4.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 80 V | 50 A | 25.2 mOhms | - 20 V, 20 V | 1 V | 105 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD50P08-25L-BE3 | |||
Mfr: SI3456DDV-T1-GE3 TTI: SI3456DDV-T1-GE3 Vishay Semiconductors Availability: 12.000In Stock12.000 On Order Expected 17-Jul-26 MOSFETs 30V Vds 20V Vgs TSOP-6 | 12.000In Stock12.000 On Order Expected 17-Jul-26 | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 6.3 A | 40 mOhms | - 20 V, 20 V | 3 V | 2.8 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3456DDV-T1-BE3 SI3456DDV-GE3 | |||
Mfr: SIR422DP-T1-GE3 TTI: SIR422DP-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 6.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 20.5 A | 6.6 mOhms | - 20 V, 20 V | 1.2 V | 48 nC | - 55 C | + 150 C | 34.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR422DP-GE3 | |||
Mfr: IRF740STRLPBF TTI: IRF740STRLPBF Vishay Semiconductors Availability: 10.400In Stock21.600 On Order Expected MOSFETs N-CH SINGLE 400V TO263 | 10.400In Stock21.600 On Order Expected | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | - 20 V, 20 V | 2 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: SI4178DY-T1-GE3 TTI: SI4178DY-T1-GE3 Vishay Semiconductors Availability: 25.000In Stock15.000 On Order Expected 17-Sep-26 MOSFETs 30V Vds 25V Vgs SO-8 | 25.000In Stock15.000 On Order Expected 17-Sep-26 | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 12 A | 21 mOhms | - 20 V, 20 V | 1.4 V | 7.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4178DY-GE3 | |||
3.350In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | - 20 V, 20 V | 4 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF-BE3 | |||||
Mfr: SI3437DV-T1-E3 TTI: SI3437DV-T1-E3 Vishay Semiconductors Availability: 42.000In Stock45.000 On Order Expected MOSFETs -150V Vds 20V Vgs TSOP-6 | 42.000In Stock45.000 On Order Expected | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 150 V | 1.4 A | 750 mOhms | - 20 V, 20 V | 2 V | 12.2 nC | - 55 C | + 150 C | 3.2 W | Enhancement | TrenchFET | Reel | SI3437DV-T1-BE3 SI3437DV-E3 | |||
Mfr: SUD23N06-31-GE3 TTI: SUD23N06-31-GE3 Vishay Semiconductors Availability: 2.000In StockMOSFETs N-Ch MOSFET 60V 31 mohm @ 10V | 2.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 21.4 A | 31 mOhms | - 20 V, 20 V | 1 V | 11 nC | - 55 C | + 150 C | 31.25 W | Enhancement | TrenchFET | Reel | SUD23N06-31-BE3 | |||
Mfr: SIS412DN-T1-GE3 TTI: SIS412DN-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 6.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 12 A | 24 mOhms | - 10 V, 10 V | 1 V | 8 nC | - 55 C | + 150 C | 10 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS412DN-GE3 | |||
Mfr: IRFP450PBF TTI: IRFP450PBF Vishay Semiconductors Availability: 800In StockMOSFETs N-CH SINGLE 500V TO247 | 800In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | - 20 V, 20 V | 2 V | 150 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SI2306BDS-T1-E3 TTI: SI2306BDS-T1-E3 Vishay Semiconductors Availability: 9.000In Stock27.000 On Order Expected MOSFETs 30V 4.0A 0.75W | 9.000In Stock27.000 On Order Expected | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.16 A | 47 mOhms | - 20 V, 20 V | 1 V | 3 nC | - 55 C | + 150 C | 750 mW | Enhancement | TrenchFET | Reel | SI2306BDS-T1-BE3 SI2306BDS-E3 | |||
Mfr: SI1077X-T1-GE3 TTI: SI1077X-T1-GE3 Vishay Semiconductors Availability: 18.000In StockMOSFETs -20V Vds 8V Vgs SC89-6 | 18.000In Stock | Si | SMD/SMT | SC-89-6 | P-Channel | 1 Channel | 20 V | 1.75 A | 65 mOhms | - 8 V, 8 V | 1 V | 31.1 nC | - 55 C | + 150 C | 330 mW | Enhancement | TrenchFET | Reel | ||||
400In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 3.3 A | 1.8 Ohms | - 20 V, 20 V | 4 V | 20 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF720PBF-BE3 | |||||
350In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 2.5 A | 3 Ohms | - 20 V, 20 V | 4 V | 24 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF820PBF-BE3 | |||||
Mfr: SI4848ADY-T1-GE3 TTI: SI4848ADY-T1-GE3 Vishay / Siliconix Availability: 10.000In StockMOSFETs 150V Vds 20V Vgs SO-8 | 10.000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 5.5 A | 133 mOhms | - 20 V, 20 V | 4 V | 4.4 nC | - 55 C | + 150 C | 5 mW | Enhancement | Reel | |||||
450In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 4.5 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF830PBF-BE3 SIHF830-E3 |
Added To Cart
- Mfr:{{cartPopObject.addedToCartObject.mfrPartNumber}}
- TTI:{{cartPopObject.addedToCartObject.ttiPartNumber}}
- {{cartPopObject.addedToCartObject.manufacturer}}
- Ext. Price:{{cartPopObject.addedToCartObject.extendedPrice}}
- {{cartPopObject.addedToCartObject.quantity}} @{{cartPopObject.addedToCartObject.price}}
- {{cartPopObject.addedToCartObject.numberOfReels}} reels of {{cartPopObject.addedToCartObject.partsPerReel}} @{{cartPopObject.addedToCartObject.price}}
- + $7.00 Per Reel