Vishay - MOSFETs
8.167 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIRS4401DP-T1-GE3 TTI: SIRS4401DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-Channel 40 V (D-S) MOSFET PowerPAK SO-8, 2.2 mohm a. 10V, 2.9 mohm a. 4.5V | 0In Stock | Si | SMD/SMT | PowerPAK SO-8S | P-Channel | 1 Channel | 40 V | 198 A | 2.2 mOhms | - 20 V, 20 V | 2.3 V | 392 nC | - 55 C | + 150 C | 132 W | Enhancement | Reel | |||||
Mfr: SIHH100N65E-T1-GE3 TTI: SIHH100N65E-T1-GE3 Vishay Availability: 0In StockMOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.1 10V | 0In Stock | Si | SMD/SMT | PowerPAK-8x8 | N-Channel | 1 Channel | 650 V | 28 A | 100 mOhms | - 30 V, 30 V | 5 V | 41 nC | - 55 C | + 150 C | 184 W | Enhancement | Reel | |||||
Mfr: SIR626LDP-T1-UE3 TTI: SIR626LDP-T1-UE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 60V PPAKSO8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 186 A | 1.5 mOhms | - 20 V, 20 V | 2.5 V | 89 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHA15N80AEF-GE3 TTI: SIHA15N80AEF-GE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 800V TO220FP | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 6 A | 350 mOhms | - 30 V, 30 V | 4 V | 36 nC | - 55 C | + 150 C | 33 W | Enhancement | Reel | |||||
Mfr: SIB4316EDK-T1-GE3 TTI: SIB4316EDK-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 30V PPAK SC75 | 0In Stock | Si | SMD/SMT | SC-75-6 | N-Channel | 1 Channel | 30 V | 4.5 A | 57 mOhms | - 12 V, 12 V | 1.4 V | 7.5 nC | - 55 C | + 150 C | 1.9 W | Enhancement | Reel | |||||
Mfr: SUP50010EL-GE3 TTI: SUP50010EL-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 150A 375W TO-220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 150 A | 1.73 mOhms | - 20 V, 20 V | 2.5 V | 192 nC | - 55 C | + 175 C | 375 W | Enhancement | Tube | |||||
Mfr: SIR826BDP-T1-RE3 TTI: SIR826BDP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 80.8 A | 5.1 mOhms | - 20 V, 20 V | 2 V | 69 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS42LDN-T1-GE3 TTI: SISS42LDN-T1-GE3 Vishay Semiconductors MOSFETs Nch 100V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 100 V | 39 A | 14.9 mOhms | - 20 V, 20 V | 1 V | 48 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI4816BDY-T1-E3 TTI: SI4816BDY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 6.8 A, 11.4 A | 11.5 mOhms, 18.5 mOhms | - 20 V, 20 V | 1 V | 7.8 nC, 11.6 nC | - 55 C | + 150 C | 1.4 W, 2.4 W | Enhancement | TrenchFET | Reel | SI4816BDY-E3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 46 A | 55 mOhms | - 20 V, 20 V | 2 V | 230 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | ||||||
Mfr: IRFI9520GPBF TTI: IRFI9520GPBF Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -100V TO220 | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 5.2 A | 600 mOhms | - 20 V, 20 V | 4 V | 18 nC | - 55 C | + 175 C | 37 W | Enhancement | Tube | |||||
Mfr: IRFU9110PBF TTI: IRFU9110PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 100V 3.1 Amp | 0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 100 V | 3.1 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 8.7 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 7.7 A | 270 mOhms | - 20 V, 20 V | 4 V | 16 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | IRFR120PBF-BE3 | |||||
Mfr: IRFI9610GPBF TTI: IRFI9610GPBF Vishay / Siliconix Availability: 0In StockMOSFETs P-CH SINGLE -200V TO220 | 0In Stock | Si | Through Hole | TO-220-3 | Tube | |||||||||||||||||
Mfr: IRF540SPBF TTI: IRF540SPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 100V TO263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | - 20 V, 20 V | 2 V | 72 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | |||||
Mfr: IRFBF20LPBF TTI: IRFBF20LPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 900V 1.7 Amp | 0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 900 V | 1.7 A | 8 Ohms | - 20 V, 20 V | 2 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 250 V | 14 A | 280 mOhms | - 20 V, 20 V | 2 V | 68 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 400 V | 3.1 A | 1.8 Ohms | - 20 V, 20 V | 2 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 19 A | 90 mOhms | - 20 V, 20 V | 2 V | 51 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD19N20-90-T4 | ||||
Mfr: IRFPC60PBF TTI: IRFPC60PBF Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT IRFP | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 16 A | 400 mOhms | - 20 V, 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: IRF510STRRPBF TTI: IRF510STRRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 100V TO263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | - 20 V, 20 V | 2 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Reel | |||||
Mfr: IRF9620STRLPBF TTI: IRF9620STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -200V TO263 | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 3.5 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 22 nC | - 55 C | + 150 C | 3 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | ||||||
Mfr: SIA421DJ-T1-GE3 TTI: SIA421DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 12 A | 35 mOhms | - 10 V, 10 V | 1.5 V | 19 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA421DJ-GE3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 15 A | 250 mOhms | - 30 V, 30 V | 4 V | 41 nC | - 55 C | + 155 C | 179 W | Enhancement | Reel |