Vishay - MOSFETs
8.168 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 19 A | 90 mOhms | - 20 V, 20 V | 2 V | 51 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD19N20-90-T4 | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | ||||||
Mfr: IRF9520STRLPBF TTI: IRF9520STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -100V TO263 | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 6.8 A | 600 mOhms | - 20 V, 20 V | 4 V | 18 nC | - 55 C | + 175 C | 60 W | Enhancement | Reel | |||||
0In Stock | Si | TO-263-3 | Tube | |||||||||||||||||||
Mfr: IRFU9110PBF TTI: IRFU9110PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 100V 3.1 Amp | 0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 100 V | 3.1 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 8.7 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: IRFZ44STRLPBF TTI: IRFZ44STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 60V 50 Amp | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | - 20 V, 20 V | 2 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | |||||
Mfr: SIA421DJ-T1-GE3 TTI: SIA421DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 12 A | 35 mOhms | - 10 V, 10 V | 1.5 V | 19 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA421DJ-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 18.4 A | 7.3 mOhms | - 20 V, 20 V | 1.5 V | 67 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4190ADY-GE3 | ||||
Mfr: SIS782DN-T1-GE3 TTI: SIS782DN-T1-GE3 Vishay Semiconductors MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 16 A | 9.5 mOhms | - 20 V, 20 V | 1 V | 30.5 nC | - 50 C | + 150 C | 41 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS782DN-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 19.2 A | 15.3 mOhms | - 25 V, 25 V | 2.6 V | 135 nC | - 55 C | + 150 C | 5.9 W | Enhancement | TrenchFET | Reel | SI4483ADY-GE3 | ||||
Mfr: SUP70060E-GE3 TTI: SUP70060E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V Vds 20V Vgs TO-220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 131 A | 4.8 mOhms | - 20 V, 20 V | 2 V | 81 nC | - 55 C | + 175 C | 200 W | Enhancement | ThunderFET | Bulk | ||||
Mfr: SIR112DP-T1-RE3 TTI: SIR112DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 133 A | 1.96 mOhms | - 16 V, 20 V | 1.1 V | 59 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIRA14BDP-T1-GE3 TTI: SIRA14BDP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds; 20/-16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 21 A | 5.38 mOhms | - 16 V, 20 V | 1.1 V | 22 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | |||||
Mfr: SIRA28BDP-T1-GE3 TTI: SIRA28BDP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds; 20/-16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 38 A | 7.5 mOhms | - 16 V, 20 V | 1.2 V | 14 nC | - 55 C | + 150 C | 17 W | Enhancement | TrenchFET; PowerPAK | Reel | ||||
Mfr: SISF02DN-T1-GE3 TTI: SISF02DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH DUAL 25V PPAK1212-8SCD | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.15 mOhms | - 16 V, 20 V | 1.1 V | 51 nC | - 55 C | + 150 C | 52 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SIZ980DT-T1-GE3 TTI: SIZ980DT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5 | 0In Stock | Si | SMD/SMT | PowerPAIR-6x5-8 | N-Channel | 2 Channel | 30 V | 20 A, 60 A | 4.7 mOhms, 1.1 mOhms | - 16 V, 20 V | 1.1 V, 1.2 V | 18 nC, 77 nC | - 55 C | + 150 C | 20 W, 66 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SISS27ADN-T1-GE3 TTI: SISS27ADN-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 50 A | 4.2 mOhms | - 20 V, 20 V | 2.2 V | 117 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR696DP-T1-GE3 TTI: SIR696DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 125V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 125 V | 60 A | 11.5 mOhms | - 20 V, 20 V | 2.5 V | 24.8 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUM40010EL-GE3 TTI: SUM40010EL-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 40 V | 120 A | 1.6 mOhms | - 20 V, 20 V | 1.2 V | 230 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHA15N65E-GE3 TTI: SIHA15N65E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 650V Vds 30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 15 A | 280 mOhms | - 30 V, 30 V | 4 V | 96 nC | - 55 C | + 150 C | 34 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 93.6 A | 4 mOhms | - 20 V, 20 V | 4 V | 54 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
Mfr: SIR826BDP-T1-RE3 TTI: SIR826BDP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 80.8 A | 5.1 mOhms | - 20 V, 20 V | 2 V | 69 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 59.6 A | 7.4 mOhms | - 20 V, 20 V | 2 V | 44 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
Mfr: SIHB125N60EF-GE3 TTI: SIHB125N60EF-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 600V TO263 | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 600 V | 25 A | 125 mOhms | - 30 V, 30 V | 5 V | 31 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 600 V | 35 A | 80 mOhms | - 30 V, 30 V | 5 V | 42 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube |
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