Vishay - MOSFETs
8.195 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | Reel | ||||||||||||||||||
Mfr: IRFIB6N60APBF TTI: IRFIB6N60APBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 600V TO220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 5.5 A | 750 mOhms | 30 V | 2 V | 49 nC | - 55 C | + 150 C | 60 W | Enhancement | Tube | |||||
Mfr: SIZ200DT-T1-GE3 TTI: SIZ200DT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20/-16V Vgs PowerPAIR 3x3S | 0In Stock | Si | SMD/SMT | PowerPAIR-3x3-8 | N-Channel | 2 Channel | 30 V | 60 A, 61 A | 5.5 mOhms, 5.8 mOhms | - 16 V, 20 V | 1.1 V | 28 nC, 30 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.6 A | 68 mOhms | 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2300DS-T1-GE3 | |||||
Mfr: SIHP30N60E-E3 TTI: SIHP30N60E-E3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 29 A | 125 mOhms | 30 V | 2.8 V | 85 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SIRA28BDP-T1-GE3 TTI: SIRA28BDP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds; 20/-16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 38 A | 7.5 mOhms | - 16 V, 20 V | 1.2 V | 14 nC | - 55 C | + 150 C | 17 W | Enhancement | TrenchFET; PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 19 A | 90 mOhms | 20 V | 2 V | 51 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD19N20-90-T4 | ||||
Mfr: SI2302HDS-T1-GE3 TTI: SI2302HDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 20V TO236 | 0In Stock | Reel | ||||||||||||||||||||
Mfr: SI3456DDV-T1-E3 TTI: SI3456DDV-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 6.3 A | 40 mOhms | 20 V | 1.2 V | 9 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3456DDV-T1-BE3 SI3456DDV-E3 | |||
Mfr: IRF540SPBF TTI: IRF540SPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 100V TO263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | |||||
Mfr: SIHFU1N60A-GE3 TTI: SIHFU1N60A-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 600V TO251 | 0In Stock | Si | Through Hole | TO-251-3 | Tube | |||||||||||||||||
Mfr: SI7898DP-T1-GE3 TTI: SI7898DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 3 A | 85 mOhms | 20 V | 2 V | 17 nC | - 55 C | + 150 C | 1.9 W | Enhancement | TrenchFET | Reel | SI7898DP-GE3 | |||
Mfr: SI8819EDB-T2-E1 TTI: SI8819EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -12V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 12 V | 2.9 A | 80 mOhms | 8 V | 900 mV | 7 nC | - 55 C | + 150 C | 900 mW | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 93.6 A | 4 mOhms | 20 V | 4 V | 54 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
Mfr: SIHB150N60E-GE3 TTI: SIHB150N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs E Series Power MOSFET D2PAK (TO-263), 158 mohm a. 10V | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 22 A | 158 mOhms | 30 V | 5 V | 24 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9.9 A | 180 mOhms | 10 V | 1 V | 66 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | ||||||
Mfr: SI3493BDV-T1-GE3 TTI: SI3493BDV-T1-GE3 Vishay Semiconductors MOSFETs 20V 8.0A 2.97W 27.5mohm @ 4.5V | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 27.5 mOhms | 8 V | 900 mV | 43.5 nC | - 55 C | + 150 C | 2.97 W | Enhancement | TrenchFET | Reel | SI3493BDV-T1-BE3 SI3493BDV-GE3 | |||
Mfr: SIHB15N50E-GE3 TTI: SIHB15N50E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 500V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 550 V | 14.5 A | 243 mOhms | 30 V | 4 V | 33 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | |||||
Mfr: SIHP20N50E-GE3 TTI: SIHP20N50E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 500V Vds 30V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 19 A | 184 mOhms | 30 V | 4 V | 46 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
Mfr: IRFIBC40GLCPBF TTI: IRFIBC40GLCPBF Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 600V TO220 | 0In Stock | Si | Tube | |||||||||||||||||||
Mfr: IRF9520STRLPBF TTI: IRF9520STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -100V TO263 | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 6.8 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 175 C | 60 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 5.2 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 175 C | 37 W | Enhancement | Tube | ||||||
Mfr: IRFU9110PBF TTI: IRFU9110PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 100V 3.1 Amp | 0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 100 V | 3.1 A | 1.2 Ohms | 20 V | 4 V | 8.7 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 7.7 A | 270 mOhms | 20 V | 4 V | 16 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | IRFR120PBF-BE3 | |||||
Mfr: IRFU310PBF TTI: IRFU310PBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 400V 1.7 Amp | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 400 V | 1.7 A | 3.6 Ohms | 20 V | 2 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube |
