Vishay - MOSFETs
8.168 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 8.5 A | 280 mOhms | - 20 V, 20 V | 4 V | 19 nC | - 55 C | + 175 C | 37 W | Enhancement | Tube | ||||||
Mfr: IRF830ASPBF TTI: IRF830ASPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 500V TO263 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 5 A | 1.4 Ohms | - 30 V, 30 V | 2 V | 24 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | |||||
Mfr: IRFR9120PBF TTI: IRFR9120PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 100V 5.6 Amp | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | - 20 V, 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SI4435DDY-T1-E3 TTI: SI4435DDY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | P-Channel | 1 Channel | 30 V | 11.4 A | 24 mOhms | - 20 V, 20 V | 3 V | 32 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4435DDY-E3 | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 4 V | 39 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840LCPBF-BE3 | |||||
Mfr: IRF740ALPBF TTI: IRF740ALPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 400V TO262 | 0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | - 30 V, 30 V | 2 V | 36 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SUP85N10-10-E3 TTI: SUP85N10-10-E3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 100V TO220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 85 A | 8.5 mOhms | - 20 V, 20 V | 1 V | 160 nC | - 55 C | + 175 C | 250 W | Enhancement | TrenchFET | Tube | ||||
Mfr: SI1467DH-T1-GE3 TTI: SI1467DH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 150 mOhms | - 8 V, 8 V | 1 V | 13.5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | TrenchFET | Reel | SI1467DH-T1-BE3 SI1405BDH-T1-GE3 SI1405DL-T1-GE3 | |||
Mfr: SIRA00DP-T1-GE3 TTI: SIRA00DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 1mOhm@10V 60A N-Ch G-IV | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 100 A | 830 uOhms | - 16 V, 20 V | 1.1 V | 220 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA00DP-GE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | - 30 V, 30 V | 4 V | 81 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | ||||||
Mfr: SIHF22N60E-GE3 TTI: SIHF22N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 21 A | 180 mOhms | - 30 V, 30 V | 4 V | 57 nC | - 55 C | + 150 C | 35 W | Enhancement | Tube | |||||
Mfr: SI8487DB-T1-E1 TTI: SI8487DB-T1-E1 Vishay Semiconductors MOSFETs -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 30 V | 7.7 A | 25 mOhms | - 12 V, 12 V | 1.2 V | 80 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI8487DB-E1 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 33 A | 99 mOhms | - 30 V, 30 V | 4 V | 155 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | ||||||
Mfr: SI8808DB-T2-E1 TTI: SI8808DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 30 V | 2.5 A | 95 mOhms | - 8 V, 8 V | 400 mV | 10 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SI3474DV-T1-GE3 TTI: SI3474DV-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V Vds 20V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 100 V | 3.8 A | 126 mOhms | - 20 V, 20 V | 1.2 V | 10.4 nC | - 55 C | + 150 C | 3.6 W | Enhancement | TrenchFET | Reel | SI3474DV-T1-BE3 | |||
Mfr: SIA923AEDJ-T1-GE3 TTI: SIA923AEDJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V .054ohm@-4.5V -4.5A P-CH | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 20 V | 4.5 A | 44 mOhms | - 8 V, 8 V | 900 mV | 25 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 19 A | 184 mOhms | - 30 V, 30 V | 4 V | 46 nC | - 55 C | + 150 C | 179 W | Enhancement | Bulk | ||||||
Mfr: SI7942DP-T1-GE3 TTI: SI7942DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 100 V | 5.9 A | 49 mOhms | - 20 V, 20 V | 4 V | 16 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI7942DP-GE3 | |||
Mfr: SIA429DJT-T1-GE3 TTI: SIA429DJT-T1-GE3 Vishay Semiconductors MOSFETs -20V Vds 8V Vgs Thin PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 12 A | 20.5 mOhms | - 8 V, 8 V | 1 V | 62 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA429DJT-GE3 | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 21 A | 180 mOhms | - 30 V, 30 V | 4 V | 57 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | ||||||
Mfr: SIHD14N60E-GE3 TTI: SIHD14N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs DPAK (TO-252) | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 13 A | 269 mOhms | - 30 V, 30 V | 4 V | 32 nC | - 55 C | + 150 C | 147 W | Enhancement | Tube | SIHD14N60E-BE3 | ||||
Mfr: SIR618DP-T1-GE3 TTI: SIR618DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 14.2 A | 76 mOhms | - 20 V, 20 V | 2 V | 21.5 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS64DN-T1-GE3 TTI: SISS64DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 1.8 mOhms | - 16 V, 20 V | 1.1 V | 68 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 131 A | 5.6 mOhms | - 20 V, 20 V | 4 V | 81 nC | - 55 C | + 175 C | 375 W | Enhancement | ThunderFET | Reel | |||||
Mfr: SIAA00DJ-T1-GE3 TTI: SIAA00DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 25V Vds 16V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 25 V | 40 A | 5.6 mOhms | - 10 V, 10 V | 1 V | 15.7 nC | - 55 C | + 150 C | 19.2 W | Enhancement | TrenchFET, PowerPAK | Reel |
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