Vishay - MOSFETs
8.167 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SIS862DN-T1-GE3 TTI: SIS862DN-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 60V Vds 20V Vgs PowerPAK 1212-8 | 6.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 60 V | 40 A | 7 mOhms | - 20 V, 20 V | 1.5 V | 32 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI4403CDY-T1-GE3 TTI: SI4403CDY-T1-GE3 Vishay Semiconductors Availability: 22.500In StockMOSFETs 1.8V P-Channel | 22.500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 20 V | 13.4 A | 15.5 mOhms | - 8 V, 8 V | 400 mV | 60 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFP150PBF TTI: IRFP150PBF Vishay Semiconductors Availability: 175In StockMOSFETs N-CH SINGLE 100V TO247 | 175In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 41 A | 55 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 175 C | 230 W | Enhancement | Tube | |||||
Mfr: SI3429EDV-T1-GE3 TTI: SI3429EDV-T1-GE3 Vishay Semiconductors Availability: 39.000In StockMOSFETs -20V Vds 8V Vgs TSOP-6 | 39.000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 38 mOhms | - 8 V, 8 V | 1 V | 118 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR186LDP-T1-RE3 TTI: SIR186LDP-T1-RE3 Vishay / Siliconix Availability: 6.000In Stock6.000 On Order Expected 11-Jan-27 MOSFETs N-CH SINGLE 60V PPAK SO-8 | 6.000In Stock6.000 On Order Expected 11-Jan-27 | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 80.3 A | 4.4 mOhms | - 20 V, 20 V | 2.5 V | 31.5 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI3460DDV-T1-GE3 TTI: SI3460DDV-T1-GE3 Vishay Semiconductors Availability: 12.000In Stock12.000 On Order Expected MOSFETs 20V Vds 8V Vgs TSOP-6 | 12.000In Stock12.000 On Order Expected | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 20 V | 7.9 A | 28 mOhms | - 8 V, 8 V | 1 V | 18 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3460DDV-T1-BE3 SI3460DDV-GE3 | |||
Mfr: SIHG73N60E-GE3 TTI: SIHG73N60E-GE3 Vishay / Siliconix Availability: 600In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 600In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 73 A | 39 mOhms | - 30 V, 30 V | 4 V | 241 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube | |||||
Mfr: IRF9510PBF TTI: IRF9510PBF Vishay Semiconductors Availability: 1.300In StockMOSFETs P-CH SINGLE -100V TO220 | 1.300In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 4 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 8.7 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF9510PBF-BE3 | ||||
Mfr: SI4840BDY-T1-GE3 TTI: SI4840BDY-T1-GE3 Vishay Semiconductors Availability: 30.000In StockMOSFETs 40V Vds 20V Vgs SO-8 | 30.000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 19 A | 9 mOhms | - 20 V, 20 V | 1 V | 50 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4840BDY-GE3 | |||
Mfr: SI3473CDV-T1-GE3 TTI: SI3473CDV-T1-GE3 Vishay Semiconductors Availability: 9.000In Stock60.000 On Order Expected MOSFETs -12V Vds 8V Vgs TSOP-6 | 9.000In Stock60.000 On Order Expected | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 12 V | 8 A | 22 mOhms | - 8 V, 8 V | 1 V | 65 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | SI3473CDV-T1-BE3 SI3473CDV-GE3 | |||
Mfr: SI6562CDQ-T1-GE3 TTI: SI6562CDQ-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -20V Vds 12V Vgs TSSOP-8 N&P PAIR | 3.000In Stock | Si | SMD/SMT | TSSOP-8 | N-Channel, P-Channel | 2 Channel | 20 V | 6.1 A, 6.7 A | 22 mOhms, 30 mOhms | - 8 V, 8 V | 600 mV | 15 nC, 34 nC | - 55 C | + 150 C | 1.6 W, 1.7 W | Enhancement | TrenchFET | Reel | SI6562CDQ-GE3 | |||
Mfr: SI7949DP-T1-GE3 TTI: SI7949DP-T1-GE3 Vishay Semiconductors Availability: 6.000In Stock6.000 On Order Expected 19-Jan-27 MOSFETs -60V Vds 20V Vgs PowerPAK SO-8 | 6.000In Stock6.000 On Order Expected 19-Jan-27 | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 2 Channel | 60 V | 5 A | 64 mOhms | - 20 V, 20 V | 3 V | 26 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI7949DP-GE3 | |||
Mfr: SIRB40DP-T1-GE3 TTI: SIRB40DP-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 6.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 40 V | 40 A | 3.25 mOhms | - 16 V, 20 V | 1.1 V | 93 nC | - 55 C | + 150 C | 46.2 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUD15N15-95-E3 TTI: SUD15N15-95-E3 Vishay Semiconductors Availability: 4.000In StockMOSFETs RECOMMENDED ALT SUD1 | 4.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 150 V | 15 A | 95 mOhms | - 20 V, 20 V | 2 V | 25 nC | - 55 C | + 175 C | 62 W | Enhancement | TrenchFET | Reel | SUD15N15-95-BE3 | |||
Mfr: IRF510SPBF TTI: IRF510SPBF Vishay Semiconductors Availability: 1.300In StockMOSFETs N-Chan 100V 5.6 Amp | 1.300In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | - 20 V, 20 V | 2 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF | ||||
Mfr: IRFBF20SPBF TTI: IRFBF20SPBF Vishay Semiconductors Availability: 1.000In StockMOSFETs N-CH SINGLE 900V TO263 | 1.000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 900 V | 1.7 A | 8 Ohms | - 20 V, 20 V | 2 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | |||||
Mfr: SIJH600E-T1-GE3 TTI: SIJH600E-T1-GE3 Vishay Semiconductors Availability: 12.000In Stock258.000 On Order Expected MOSFETs N-CH SINGLE 60V PPAK 8X8L | 12.000In Stock258.000 On Order Expected | Si | SMD/SMT | PowerPak-8 | 60 V | - 20 V, 20 V | 4 V | 141 nC | - 55 C | + 175 C | 333 W | Enhancement | Reel | |||||||||
Mfr: SI7898DP-T1-E3 TTI: SI7898DP-T1-E3 Vishay Semiconductors Availability: 9.000In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 9.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 3 A | 85 mOhms | - 20 V, 20 V | 2 V | 17 nC | - 55 C | + 150 C | 1.9 W | Enhancement | TrenchFET | Reel | SI7898DP-T1 | |||
Mfr: SI3493DDV-T1-GE3 TTI: SI3493DDV-T1-GE3 Vishay / Siliconix Availability: 3.000In StockMOSFETs -20V Vds 8V Vgs TSOP-6 | 3.000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 20 mOhms | - 8 V, 8 V | 1 V | 52.2 nC | - 55 C | + 150 C | 3.6 W | Enhancement | Reel | |||||
Mfr: SISH101DN-T1-GE3 TTI: SISH101DN-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs -30V Vds; +/-25V Vgs PowerPAK 1212-8SH | 6.000In Stock | Si | SMD/SMT | PowerPAK-1212-8SH-8 | P-Channel | 1 Channel | 30 V | 35 A | 7.2 mOhms | - 25 V, 25 V | 2.5 V | 102 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET; PowerPAK | Reel | ||||
Mfr: IRFR210PBF TTI: IRFR210PBF Vishay Semiconductors Availability: 2.475In StockMOSFETs N-Chan 200V 2.6 Amp | 2.475In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 2.6 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | IRFR210PBF-BE3 | ||||
Mfr: SIR870ADP-T1-GE3 TTI: SIR870ADP-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 6.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 5.5 mOhms | - 20 V, 20 V | 1.5 V | 80 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR870ADP-GE3 | |||
Mfr: SISS23DN-T1-GE3 TTI: SISS23DN-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8S | 3.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 50 A | 3.5 mOhms | - 8 V, 8 V | 900 mV | 300 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI7469DP-T1-GE3 TTI: SI7469DP-T1-GE3 Vishay Semiconductors Availability: 9.000In StockMOSFETs -80V Vds 20V Vgs PowerPAK SO-8 | 9.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 80 V | 28 A | 29 mOhms | - 20 V, 20 V | 3 V | 160 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7469DP-GE3 | |||
Mfr: SI4160DY-T1-GE3 TTI: SI4160DY-T1-GE3 Vishay Semiconductors Availability: 2.500In Stock10.000 On Order Expected 28-Oct-26 MOSFETs 30V Vds 20V Vgs SO-8 | 2.500In Stock10.000 On Order Expected 28-Oct-26 | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 25.4 A | 4.9 mOhms | - 20 V, 20 V | 1 V | 54 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4160DY-GE3 |
Added To Cart
- Mfr:{{cartPopObject.addedToCartObject.mfrPartNumber}}
- TTI:{{cartPopObject.addedToCartObject.ttiPartNumber}}
- {{cartPopObject.addedToCartObject.manufacturer}}
- Ext. Price:{{cartPopObject.addedToCartObject.extendedPrice}}
- {{cartPopObject.addedToCartObject.quantity}} @{{cartPopObject.addedToCartObject.price}}
- {{cartPopObject.addedToCartObject.numberOfReels}} reels of {{cartPopObject.addedToCartObject.partsPerReel}} @{{cartPopObject.addedToCartObject.price}}
- + $7.00 Per Reel