Vishay - MOSFETs
8.195 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFU9120PBF TTI: IRFU9120PBF Vishay Semiconductors Availability: 1.500In StockMOSFETs P-Chan 100V 5.6 Amp | 1.500In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SIJH600E-T1-GE3 TTI: SIJH600E-T1-GE3 Vishay Semiconductors Availability: 2.000In Stock264.000 On Order Expected MOSFETs N-CH SINGLE 60V PPAK 8X8L | 2.000In Stock264.000 On Order Expected | Si | SMD/SMT | PowerPak-8 | 60 V | 20 V | 4 V | 141 nC | - 55 C | + 175 C | 333 W | Enhancement | Reel | |||||||||
Mfr: SI4160DY-T1-GE3 TTI: SI4160DY-T1-GE3 Vishay Semiconductors Availability: 2.500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 2.500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 25.4 A | 4.9 mOhms | 20 V | 1 V | 54 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4160DY-GE3 | |||
Mfr: SI4488DY-T1-GE3 TTI: SI4488DY-T1-GE3 Vishay Semiconductors Availability: 2.500In StockMOSFETs 150V Vds 20V Vgs SO-8 | 2.500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 5 A | 50 mOhms | 20 V | 2 V | 36 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4488DY-GE3 | |||
Mfr: SI7469DP-T1-GE3 TTI: SI7469DP-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -80V Vds 20V Vgs PowerPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 80 V | 28 A | 29 mOhms | 20 V | 3 V | 160 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7469DP-GE3 | |||
Mfr: SIR462DP-T1-GE3 TTI: SIR462DP-T1-GE3 Vishay Semiconductors Availability: 18.000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 18.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 30 A | 7.9 mOhms | 20 V | 1 V | 20 nC | - 55 C | + 150 C | 41.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR462DP-GE3 | |||
Mfr: IRFBC30ASPBF TTI: IRFBC30ASPBF Vishay Semiconductors Availability: 500In StockMOSFETs N-Chan 600V 3.6 Amp | 500In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 3.6 A | 2.2 Ohms | 30 V | 2 V | 23 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | |||||
Mfr: SIHG47N60E-GE3 TTI: SIHG47N60E-GE3 Vishay / Siliconix Availability: 1.500In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 1.500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 64 mOhms | 30 V | 4 V | 148 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | |||||
Mfr: SUD50P06-15L-E3 TTI: SUD50P06-15L-E3 Vishay Semiconductors Availability: 10.000In Stock10.000 On Order Expected 24-Feb-27 MOSFETs P-CH 60V 50A | 10.000In Stock10.000 On Order Expected 24-Feb-27 | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 15 mOhms | 20 V | 3 V | 110 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUD08P06-155L-GE3 TTI: SUD08P06-155L-GE3 Vishay Semiconductors Availability: 2.000In StockMOSFETs -30V 0.155ohm@-10V -8.4A P-CH | 2.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.2 A | 280 mOhms | 20 V | 2 V | 19 nC | - 55 C | + 150 C | 20.8 W | Enhancement | TrenchFET | Reel | SUD08P06-155L-BE3 | |||
1.000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 5.2 A | 800 mOhms | 20 V | 4 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF620PBF-BE3 | |||||
Mfr: SUM90220E-GE3 TTI: SUM90220E-GE3 Vishay Semiconductors Availability: 800In StockMOSFETs 200V Vds 20V Vgs TO-263 | 800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 64 A | 18 mOhms | 20 V | 2 V | 48 nC | - 55 C | + 175 C | 230 W | Enhancement | Reel | |||||
Mfr: SUM90140E-GE3 TTI: SUM90140E-GE3 Vishay Semiconductors Availability: 800In StockMOSFETs 200V Vds 20V Vgs D2PAK (TO-263) | 800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 90 A | 13.8 mOhms | 20 V | 2 V | 96 nC | - 55 C | + 175 C | 375 W | Enhancement | ThunderFET | Reel | ||||
Mfr: SUD19N20-90-E3 TTI: SUD19N20-90-E3 Vishay Semiconductors Availability: 8.000In StockMOSFETs N-CH SINGLE 200V TO-252 | 8.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 19 A | 90 mOhms | 20 V | 4 V | 34 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD19N20-90-BE3 | |||
3.600In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF740PBF-BE3 SIHF740-E3 | |||||
Mfr: IRFB9N60APBF TTI: IRFB9N60APBF Vishay Semiconductors Availability: 800In StockMOSFETs N-CH SINGLE 600V TO220 | 800In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | 30 V | 4 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | IRFB9N60APBF-BE3 | ||||
Mfr: IRFU9310PBF TTI: IRFU9310PBF Vishay Semiconductors Availability: 75In Stock1.950 On Order Expected 11-Jan-27 MOSFETs P-Chan 400V 1.8 Amp | 75In Stock1.950 On Order Expected 11-Jan-27 | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||
Mfr: SI9407BDY-T1-E3 TTI: SI9407BDY-T1-E3 Vishay Semiconductors Availability: 5.000In StockMOSFETs -60V Vds 20V Vgs SO-8 | 5.000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.7 A | 100 mOhms | 20 V | 1 V | 14.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI9407BDY-E3 | |||
Mfr: SI1062X-T1-GE3 TTI: SI1062X-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 20V Vds 8V Vgs SC89-3 | 6.000In Stock | Si | SMD/SMT | SC-89-3 | N-Channel | 1 Channel | 20 V | 530 mA | 420 mOhms | 8 V | 400 mV | 2.7 nC | - 55 C | + 150 C | 220 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SIB441EDK-T1-GE3 TTI: SIB441EDK-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -12V Vds 8V Vgs PowerPAK SC-75 | 3.000In Stock | Si | SMD/SMT | SC-75-6 | P-Channel | 1 Channel | 12 V | 9 A | 21 mOhms | 8 V | 900 mV | 33 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI7137DP-T1-GE3 TTI: SI7137DP-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -20V Vds 12V Vgs PowerPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 1.95 mOhms | 12 V | 1.4 V | 390 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7137DP-GE3 | |||
Mfr: SI3473CDV-T1-GE3 TTI: SI3473CDV-T1-GE3 Vishay Semiconductors Availability: 3.000In Stock42.000 On Order Expected MOSFETs -12V Vds 8V Vgs TSOP-6 | 3.000In Stock42.000 On Order Expected | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 12 V | 8 A | 22 mOhms | 8 V | 1 V | 65 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | SI3473CDV-T1-BE3 SI3473CDV-GE3 | |||
Mfr: SI6562CDQ-T1-GE3 TTI: SI6562CDQ-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -20V Vds 12V Vgs TSSOP-8 N&P PAIR | 3.000In Stock | Si | SMD/SMT | TSSOP-8 | N-Channel, P-Channel | 2 Channel | 20 V | 6.1 A, 6.7 A | 22 mOhms, 30 mOhms | 8 V | 600 mV | 15 nC, 34 nC | - 55 C | + 150 C | 1.6 W, 1.7 W | Enhancement | TrenchFET | Reel | SI6562CDQ-GE3 | |||
Mfr: SI3429EDV-T1-GE3 TTI: SI3429EDV-T1-GE3 Vishay Semiconductors Availability: 24.000In StockMOSFETs -20V Vds 8V Vgs TSOP-6 | 24.000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 38 mOhms | 8 V | 1 V | 118 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI3460DDV-T1-GE3 TTI: SI3460DDV-T1-GE3 Vishay Semiconductors Availability: 12.000In Stock6.000 On Order Expected 26-Jan-27 MOSFETs 20V Vds 8V Vgs TSOP-6 | 12.000In Stock6.000 On Order Expected 26-Jan-27 | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 20 V | 7.9 A | 28 mOhms | 8 V | 1 V | 18 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3460DDV-T1-BE3 SI3460DDV-GE3 |