Vishay - MOSFETs
8.167 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SI4162DY-T1-GE3 TTI: SI4162DY-T1-GE3 Vishay Semiconductors Availability: 32.500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 32.500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 19.3 A | 7.9 mOhms | - 20 V, 20 V | 3 V | 20 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4162DY-GE3 | |||
Mfr: SIR622DP-T1-RE3 TTI: SIR622DP-T1-RE3 Vishay / Siliconix Availability: 6.000In StockMOSFETs 150V Vds; 20V Vgs PowerPAK SO-8 | 6.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 51.6 A | 17.7 mOhms | - 20 V, 20 V | 2.5 V | 41 nC | - 55 C | + 150 C | 104 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SIS862DN-T1-GE3 TTI: SIS862DN-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 60V Vds 20V Vgs PowerPAK 1212-8 | 6.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 60 V | 40 A | 7 mOhms | - 20 V, 20 V | 1.5 V | 32 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI4403CDY-T1-GE3 TTI: SI4403CDY-T1-GE3 Vishay Semiconductors Availability: 22.500In StockMOSFETs 1.8V P-Channel | 22.500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 20 V | 13.4 A | 15.5 mOhms | - 8 V, 8 V | 400 mV | 60 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFP150PBF TTI: IRFP150PBF Vishay Semiconductors Availability: 175In StockMOSFETs N-CH SINGLE 100V TO247 | 175In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 41 A | 55 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 175 C | 230 W | Enhancement | Tube | |||||
Mfr: SI7121DN-T1-GE3 TTI: SI7121DN-T1-GE3 Vishay Semiconductors Availability: 12.000In StockMOSFETs 30V 16A 52W 1.8mohm @ 10V | 12.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 16 A | 18 mOhms | - 25 V, 25 V | 3 V | 43 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7121DN-GE3 | |||
Mfr: IRFPG50PBF TTI: IRFPG50PBF Vishay Semiconductors Availability: 1.725In StockMOSFETs N-CH SINGLE 1KV TO247 | 1.725In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 6.1 A | 2 Ohms | - 20 V, 20 V | 2 V | 190 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SI3410DV-T1-GE3 TTI: SI3410DV-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 3.000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 8 A | 19.5 mOhms | - 20 V, 20 V | 1 V | 33 nC | - 55 C | + 150 C | 4.1 W | Enhancement | TrenchFET | Reel | SI3410DV-GE3 | |||
Mfr: IRFBC40APBF TTI: IRFBC40APBF Vishay Semiconductors Availability: 300In StockMOSFETs N-CH SINGLE 600V TO220 | 300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | - 30 V, 30 V | 4 V | 42 nC | - 55 C | + 150 C | 96 W | Enhancement | Tube | IRFBC40APBF-BE3 | ||||
Mfr: SIS407ADN-T1-GE3 TTI: SIS407ADN-T1-GE3 Vishay Semiconductors Availability: 6.000In Stock6.000 On Order Expected 25-Nov-26 MOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 6.000In Stock6.000 On Order Expected 25-Nov-26 | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 18 A | 9 mOhms | - 8 V, 8 V | 400 mV | 112 nC | - 55 C | + 150 C | 39.1 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR580DP-T1-RE3 TTI: SIR580DP-T1-RE3 Vishay / Siliconix Availability: 276.000In Stock165.000 On Order Expected 02-Nov-26 MOSFETs N-CH SINGLE 80V PPAK SO-8 | 276.000In Stock165.000 On Order Expected 02-Nov-26 | Si | SMD/SMT | PowerPAK SO-8-8 | N-Channel | 1 Channel | 80 V | 146 A | 3.2 mOhms | - 20 V, 20 V | 4 V | 76 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUM70101EL-GE3 TTI: SUM70101EL-GE3 Vishay Semiconductors Availability: 800In StockMOSFETs -100V Vds 20V Vgs TO-263 | 800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 120 A | 10.1 mOhms | - 20 V, 20 V | 2.5 V | 125 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | |||||
Mfr: SI7119DN-T1-GE3 TTI: SI7119DN-T1-GE3 Vishay Semiconductors Availability: 18.000In Stock21.000 On Order Expected MOSFETs -200V Vds 20V Vgs PowerPAK 1212-8 | 18.000In Stock21.000 On Order Expected | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 200 V | 3.8 A | 1.05 Ohms | - 20 V, 20 V | 4 V | 16.2 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7119DN-GE3 | |||
Mfr: SIDR668DP-T1-GE3 TTI: SIDR668DP-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8DC | 3.000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 95 A | 5.05 mOhms | - 20 V, 20 V | 2 V | 72 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET | Reel | ||||
650In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9 A | 400 mOhms | - 20 V, 20 V | 4 V | 43 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF630PBF-BE3 | |||||
Mfr: SI4948BEY-T1-E3 TTI: SI4948BEY-T1-E3 Vishay Semiconductors Availability: 20.000In StockMOSFETs -60V Vds 20V Vgs SO-8 | 20.000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 60 V | 3.1 A | 120 mOhms | - 20 V, 20 V | 1 V | 22 nC | - 55 C | + 175 C | 2.4 W | Enhancement | TrenchFET | Reel | SI4948BEY-E3 | |||
Mfr: SI3424CDV-T1-GE3 TTI: SI3424CDV-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 3.000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 8 A | 26 mOhms | - 20 V, 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 3.6 W | Enhancement | TrenchFET | Reel | SI3424CDV-T1-BE3 | |||
Mfr: SI3429EDV-T1-GE3 TTI: SI3429EDV-T1-GE3 Vishay Semiconductors Availability: 39.000In StockMOSFETs -20V Vds 8V Vgs TSOP-6 | 39.000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 38 mOhms | - 8 V, 8 V | 1 V | 118 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR186LDP-T1-RE3 TTI: SIR186LDP-T1-RE3 Vishay / Siliconix Availability: 6.000In Stock6.000 On Order Expected 11-Jan-27 MOSFETs N-CH SINGLE 60V PPAK SO-8 | 6.000In Stock6.000 On Order Expected 11-Jan-27 | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 80.3 A | 4.4 mOhms | - 20 V, 20 V | 2.5 V | 31.5 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI3460DDV-T1-GE3 TTI: SI3460DDV-T1-GE3 Vishay Semiconductors Availability: 12.000In Stock12.000 On Order Expected MOSFETs 20V Vds 8V Vgs TSOP-6 | 12.000In Stock12.000 On Order Expected | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 20 V | 7.9 A | 28 mOhms | - 8 V, 8 V | 1 V | 18 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3460DDV-T1-BE3 SI3460DDV-GE3 | |||
Mfr: SIHG73N60E-GE3 TTI: SIHG73N60E-GE3 Vishay / Siliconix Availability: 600In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 600In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 73 A | 39 mOhms | - 30 V, 30 V | 4 V | 241 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube | |||||
Mfr: IRF9510PBF TTI: IRF9510PBF Vishay Semiconductors Availability: 1.300In StockMOSFETs P-CH SINGLE -100V TO220 | 1.300In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 4 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 8.7 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF9510PBF-BE3 | ||||
Mfr: SI4840BDY-T1-GE3 TTI: SI4840BDY-T1-GE3 Vishay Semiconductors Availability: 30.000In StockMOSFETs 40V Vds 20V Vgs SO-8 | 30.000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 19 A | 9 mOhms | - 20 V, 20 V | 1 V | 50 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4840BDY-GE3 | |||
Mfr: SI3473CDV-T1-GE3 TTI: SI3473CDV-T1-GE3 Vishay Semiconductors Availability: 9.000In Stock60.000 On Order Expected MOSFETs -12V Vds 8V Vgs TSOP-6 | 9.000In Stock60.000 On Order Expected | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 12 V | 8 A | 22 mOhms | - 8 V, 8 V | 1 V | 65 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | SI3473CDV-T1-BE3 SI3473CDV-GE3 | |||
Mfr: SI6562CDQ-T1-GE3 TTI: SI6562CDQ-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -20V Vds 12V Vgs TSSOP-8 N&P PAIR | 3.000In Stock | Si | SMD/SMT | TSSOP-8 | N-Channel, P-Channel | 2 Channel | 20 V | 6.1 A, 6.7 A | 22 mOhms, 30 mOhms | - 8 V, 8 V | 600 mV | 15 nC, 34 nC | - 55 C | + 150 C | 1.6 W, 1.7 W | Enhancement | TrenchFET | Reel | SI6562CDQ-GE3 |
Added To Cart
- Mfr:{{cartPopObject.addedToCartObject.mfrPartNumber}}
- TTI:{{cartPopObject.addedToCartObject.ttiPartNumber}}
- {{cartPopObject.addedToCartObject.manufacturer}}
- Ext. Price:{{cartPopObject.addedToCartObject.extendedPrice}}
- {{cartPopObject.addedToCartObject.quantity}} @{{cartPopObject.addedToCartObject.price}}
- {{cartPopObject.addedToCartObject.numberOfReels}} reels of {{cartPopObject.addedToCartObject.partsPerReel}} @{{cartPopObject.addedToCartObject.price}}
- + $7.00 Per Reel