Vishay - MOSFETs
8.235 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock6.800 On Order Expected | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840PBF-BE3 SIHF840-E3 | |||||
Mfr: SI2328DS-T1-E3 TTI: SI2328DS-T1-E3 Vishay Semiconductors Availability: 0In Stock117.000 On Order Expected MOSFETs 100V Vds 20V Vgs SOT-23 | 0In Stock117.000 On Order Expected | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 1.15 A | 250 mOhms | 20 V | 4 V | 3.3 nC | - 55 C | + 150 C | 730 mW | Enhancement | TrenchFET | Reel | SI2328DS-T1-BE3 SI2328DS-E3 | |||
Mfr: SI1922EDH-T1-GE3 TTI: SI1922EDH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.3 A | 198 mOhms | 8 V | 1 V | 2.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1922EDH-T1-BE3 SI1988DH-T1-GE3 | |||
Mfr: SI7617DN-T1-GE3 TTI: SI7617DN-T1-GE3 Vishay Semiconductors Availability: 0In Stock51.000 On Order Expected MOSFETs -30V Vds 25V Vgs PowerPAK 1212-8 | 0In Stock51.000 On Order Expected | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 12.3 mOhms | 25 V | 1.2 V | 39 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7617DN-GE3 | |||
Mfr: SIS892ADN-T1-GE3 TTI: SIS892ADN-T1-GE3 Vishay Semiconductors Availability: 0In Stock21.000 On Order Expected MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock21.000 On Order Expected | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 28 A | 27 mOhms | 20 V | 1.5 V | 19.5 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS892ADN-GE3 | |||
Mfr: SI7149ADP-T1-GE3 TTI: SI7149ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 25V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 50 A | 5.2 mOhms | 25 V | 2.5 V | 90 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET | Reel | ||||
Mfr: 2N7002K-T1-GE3 TTI: 2N7002K-T1-GE3 Vishay Semiconductors Availability: 0In Stock801.000 On Order Expected 24-Sep-27 MOSFETs 60V Vds 20V Vgs SOT-23 | 0In Stock801.000 On Order Expected 24-Sep-27 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 300 mA | 2 Ohms | 20 V | 1 V | 400 pC | - 55 C | + 150 C | 350 mW | Enhancement | Reel | 2N7002K-GE3 | ||||
Mfr: SI4936CDY-T1-GE3 TTI: SI4936CDY-T1-GE3 Vishay Semiconductors Availability: 0In Stock30.000 On Order Expected MOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock30.000 On Order Expected | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 5.8 A | 40 mOhms | 20 V | 3 V | 9 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | SI4936CDY-GE3 | |||
Mfr: SI3127DV-T1-GE3 TTI: SI3127DV-T1-GE3 Vishay / Siliconix Availability: 0In Stock78.000 On Order Expected 25-Nov-27 MOSFETs -60V Vds 20V Vgs TSOP-6 | 0In Stock78.000 On Order Expected 25-Nov-27 | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 60 V | 5.1 A | 146 mOhms | 20 V | 3 V | 30 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7461DP-T1-E3 TTI: SI7461DP-T1-E3 Vishay Semiconductors Availability: 0In Stock3.000 On Order Expected 25-Jul-29 MOSFETs -60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock3.000 On Order Expected 25-Jul-29 | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 60 V | 14.4 A | 14.5 mOhms | 20 V | 3 V | 121 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7461DP-E3 | |||
Mfr: SI4288DY-T1-GE3 TTI: SI4288DY-T1-GE3 Vishay Semiconductors Availability: 0In Stock92.500 On Order Expected MOSFETs 40V Vds 20V Vgs SO-8 | 0In Stock92.500 On Order Expected | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 40 V | 9.2 A | 20 mOhms | 20 V | 1.2 V | 10 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4288DY-GE3 | |||
Mfr: SI2365EDS-T1-GE3 TTI: SI2365EDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 5.9 A | 26.5 mOhms | 8 V | 1 V | 13.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2365EDS-T1-BE3 SI4816DY-T1-E3-S | |||
Mfr: SI3476DV-T1-GE3 TTI: SI3476DV-T1-GE3 Vishay Semiconductors Availability: 0In Stock51.000 On Order Expected MOSFETs 80V Vds 20V Vgs TSOP-6 | 0In Stock51.000 On Order Expected | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 80 V | 4.6 A | 93 mOhms | 20 V | 1.2 V | 4.9 nC | - 55 C | + 150 C | 3.6 W | Enhancement | TrenchFET | Reel | SI3476DV-T1-BE3 | |||
Mfr: SI4599DY-T1-GE3 TTI: SI4599DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -40V Vds 20V Vgs SO-8 N&P PAIR | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel, P-Channel | 2 Channel | 40 V | 5.8 A, 6.8 A | 35.5 mOhms, 45 mOhms | 20 V | 1.2 V, 1.4 V | 11.7 nC, 25 nC | - 55 C | + 150 C | 3 W, 3.1 W | Enhancement | TrenchFET | Reel | SI4599DY-GE3 | |||
0In Stock2.000 On Order Expected 29-Jul-27 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 14 A | 160 mOhms | 20 V | 4 V | 26 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF530PBF-BE3 IRF520SPBF | |||||
Mfr: SI4425DDY-T1-GE3 TTI: SI4425DDY-T1-GE3 Vishay Semiconductors Availability: 0In Stock60.000 On Order Expected MOSFETs -30V Vds 20V Vgs SO-8 | 0In Stock60.000 On Order Expected | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 19.7 A | 9.8 mOhms | 20 V | 1.2 V | 53 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4425DDY-GE3 | |||
Mfr: SI1012CR-T1-GE3 TTI: SI1012CR-T1-GE3 Vishay Semiconductors Availability: 0In Stock84.000 On Order Expected MOSFETs 20V Vds 8V Vgs SC75A | 0In Stock84.000 On Order Expected | Si | SMD/SMT | SC-75-3 | N-Channel | 1 Channel | 20 V | 600 mA | 396 mOhms | 8 V | 400 mV | 1.3 nC | - 55 C | + 150 C | 240 mW | Enhancement | TrenchFET | Reel | SI1012CR-GE3 | |||
Mfr: IRLL110TRPBF TTI: IRLL110TRPBF Vishay Semiconductors Availability: 0In Stock40.000 On Order Expected MOSFETs N-Chan 100V 1.5 Amp | 0In Stock40.000 On Order Expected | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | 10 V | 2 V | 6.1 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRLL110TRPBF-BE3 | ||||
Mfr: SIR422DP-T1-GE3 TTI: SIR422DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 20.5 A | 6.6 mOhms | 20 V | 1.2 V | 48 nC | - 55 C | + 150 C | 34.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR422DP-GE3 | |||
Mfr: SIS443DN-T1-GE3 TTI: SIS443DN-T1-GE3 Vishay Semiconductors Availability: 0In Stock39.000 On Order Expected MOSFETs -40V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock39.000 On Order Expected | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 40 V | 35 A | 11.7 mOhms | 10 V | 1 V | 90 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI4946CDY-T1-GE3 TTI: SI4946CDY-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 60 V | 6.1 A | 51.6 mOhms | 20 V | 3 V | 2.4 nC | - 55 C | + 150 C | 2.8 W | Enhancement | Reel | |||||
Mfr: SI3433CDV-T1-GE3 TTI: SI3433CDV-T1-GE3 Vishay Semiconductors Availability: 0In Stock24.000 On Order Expected 26-Jun-29 MOSFETs -20V Vds 8V Vgs TSOP-6 | 0In Stock24.000 On Order Expected 26-Jun-29 | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 6 A | 38 mOhms | 8 V | 1 V | 18 nC | - 55 C | + 150 C | 3.3 W | Enhancement | TrenchFET | Reel | SI3433CDV-T1-BE3 SI3433CDV-GE3 | |||
Mfr: SI2323CDS-T1-GE3 TTI: SI2323CDS-T1-GE3 Vishay Semiconductors Availability: 0In Stock135.000 On Order Expected MOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock135.000 On Order Expected | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 6 A | 39 mOhms | 8 V | 1 V | 9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2323CDS-T1-BE3 SI2323CDS-GE3 | |||
0In Stock30.000 On Order Expected | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | 20 V | 4 V | 72 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRF540PBF-BE3 | |||||
Mfr: SI7461DP-T1-GE3 TTI: SI7461DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 60 V | 14.4 A | 14.5 mOhms | 20 V | 3 V | 121 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7461DP-GE3 |