Vishay - MOSFETs
8.167 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIR5802DP-T1-RE3-X TTI: SIR5802DP-T1-RE3-X Vishay Availability: 50In StockCut Tape MOSFETs N-CH SINGLE 80V PPAK SO-8 | 50In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 80 V | 137.5 A | 2.9 mOhms | - 10 V, 10 V | 4 V | 28 nC | - 55 C | + 150 C | PowerPAK | Cut Tape | ||||||
Mfr: SIR580DP-T1-RE3-X TTI: SIR580DP-T1-RE3-X Vishay Availability: 15In StockCut Tape MOSFETs N-CH SINGLE 80V PPAK SO-8 | 15In Stock | Si | Cut Tape | |||||||||||||||||||
Mfr: SISD5300DN-T1-GE3-X TTI: SISD5300DN-T1-GE3-X Vishay Availability: 50In StockCut Tape MOSFETs N-CH SINGLE 30V PPAK1212-F | 50In Stock | Cut Tape | ||||||||||||||||||||
Mfr: SQJ204EP-T1/GE3-X TTI: SQJ204EP-T1/GE3-X Vishay Availability: 50In StockCut Tape MOSFETs N-CH DUAL 12V PPAK SO-8L | 50In Stock | Si | Cut Tape | |||||||||||||||||||
Mfr: SQJ244EP-T1/GE3-X TTI: SQJ244EP-T1/GE3-X Vishay Availability: 50In StockCut Tape MOSFETs N-CH DUAL 40V PPAK SO-8L | 50In Stock | Si | Cut Tape | |||||||||||||||||||
Mfr: SQJ264EP-T1/GE3-X TTI: SQJ264EP-T1/GE3-X Vishay Availability: 50In StockCut Tape MOSFETs N-CH DUAL 60V PPAK SO-8L | 50In Stock | Si | Cut Tape | |||||||||||||||||||
Mfr: SIR584DP-T1-RE3-X TTI: SIR584DP-T1-RE3-X Vishay Availability: 25In StockCut Tape MOSFETs N-CH SINGLE 80V PPAK SO-8 | 25In Stock | Si | Cut Tape | |||||||||||||||||||
Mfr: SQJ211ELP-T1/GE3 TTI: SQJ211ELP-T1/GE3 Vishay Availability: 3.000In StockMOSFETs N-CH SINGLE -100V PPAK SO-8L | 3.000In Stock | Si | Reel | |||||||||||||||||||
Mfr: SQJ200EP-T1/GE3-X TTI: SQJ200EP-T1/GE3-X Vishay Availability: 50In StockCut Tape MOSFETs N-CH DUAL 20V PPAKSO8L | 50In Stock | Si | Cut Tape | |||||||||||||||||||
Mfr: SIJH600E-T1-GE3-X TTI: SIJH600E-T1-GE3-X Vishay Availability: 50In StockCut Tape MOSFETs N-CH SINGLE 60V PPAK 8X8L | 50In Stock | Cut Tape | ||||||||||||||||||||
Mfr: SQJ990EP-T1/GE3-X TTI: SQJ990EP-T1/GE3-X Vishay Availability: 50In StockCut Tape MOSFETs N-CH DUAL 100V PPAKSO8L | 50In Stock | Si | Cut Tape | |||||||||||||||||||
Mfr: SQJ260EP-T1/GE3-X TTI: SQJ260EP-T1/GE3-X Vishay Availability: 50In StockCut Tape MOSFETs N-CH DUAL 60V PPAKSO8L | 50In Stock | Si | Cut Tape | |||||||||||||||||||
Mfr: SIHK050N65E-T1-GE3-X TTI: SIHK050N65E-T1-GE3-X Vishay Availability: 20In StockCut Tape MOSFETs N-CH SINGLE 700V PPAK10X12 | 20In Stock | Cut Tape | ||||||||||||||||||||
Mfr: SIS434DN-T1-GE3 TTI: SIS434DN-T1-GE3 Vishay Semiconductors MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 35 A | 6.3 mOhms | - 20 V, 20 V | 1.2 V | 40 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS434DN-GE3 | |||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.1 A | 112 mOhms | - 8 V, 8 V | 1 V | 3.3 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI2301CDS-T1-BE3 SI2301CDS-GE3 | ||||
Mfr: SI2347DS-T1-GE3 TTI: SI2347DS-T1-GE3 Vishay Semiconductors Availability: 27.000In Stock27.000 On Order Expected 17-Jul-26 MOSFETs -30V Vds 20V Vgs SOT-23 | 27.000In Stock27.000 On Order Expected 17-Jul-26 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 5 A | 33 mOhms | - 20 V, 20 V | 2.5 V | 6.9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2347DS-T1-BE3 | |||
Mfr: SI2308CDS-T1-GE3 TTI: SI2308CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 2.6 A | 200 mOhms | - 20 V, 20 V | 3 V | 2 nC | - 55 C | + 150 C | 1.6 W | Enhancement | Reel | |||||
Mfr: SI2318CDS-T1-GE3 TTI: SI2318CDS-T1-GE3 Vishay Semiconductors Availability: 0In Stock66.000 On Order Expected MOSFETs 40V Vds 20V Vgs SOT-23 | 0In Stock66.000 On Order Expected | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 5.6 A | 42 mOhms | - 20 V, 20 V | 2.5 V | 2.9 nC | - 55 C | + 150 C | 2.1 W | Enhancement | TrenchFET | Reel | SI2318CDS-T1-BE3 SI2318CDS-GE3 | |||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 60 V | 1.6 A | 345 mOhms | - 20 V, 20 V | 3 V | 2.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2309CDS-T1-BE3 SI2309CDS-GE3 | ||||
Mfr: SI2369DS-T1-GE3 TTI: SI2369DS-T1-GE3 Vishay Semiconductors Availability: 0In Stock30.000 On Order Expected 16-Jul-26 MOSFETs -30V Vds 20V Vgs SOT-23 | 0In Stock30.000 On Order Expected 16-Jul-26 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 7.6 A | 29 mOhms | - 20 V, 20 V | 2.5 V | 11.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2369DS-T1-BE3 | |||
Mfr: SI4946CDY-T1-GE3 TTI: SI4946CDY-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 60 V | 6.1 A | 51.6 mOhms | - 20 V, 20 V | 3 V | 2.4 nC | - 55 C | + 150 C | 2.8 W | Enhancement | Reel | |||||
Mfr: SI2387DS-T1-GE3 TTI: SI2387DS-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CH SINGLE -80V SOT23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 80 V | 3 A | 242 mOhms | - 20 V, 20 V | 2.5 V | 10.2 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2323DDS-T1-GE3 TTI: SI2323DDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 5.3 A | 39 mOhms | - 8 V, 8 V | 1 V | 13.6 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2323DDS-T1-BE3 | |||
Mfr: SI2312CDS-T1-GE3 TTI: SI2312CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 6 A | 31.8 mOhms | - 8 V, 8 V | 1 V | 8.8 nC | - 55 C | + 150 C | 2.1 W | Enhancement | TrenchFET | Reel | SI2312CDS-T1-BE3 SI2312CDS-GE3 SI7621DN-T1-GE3 | |||
Mfr: IRLL110TRPBF TTI: IRLL110TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 100V 1.5 Amp | 0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | - 10 V, 10 V | 2 V | 6.1 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRLL110TRPBF-BE3 |
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