SIEH4800EW-T1-GE3 - Vishay - MOSFETs
2 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: SIEH4800EW-T1-GE3 TTI: SIEH4800EW-T1-GE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 80V PPAK8X8BWL | 0In Stock | Si | SMD/SMT | PowerPAK-8 | N-Channel | 1 Channel | 80 V | 34 A | 1.15 mOhms | - 20 V, 20 V | 4 V | 278 nC | - 55 C | + 175 C | 3.4 W | Enhancement | Reel | ||||
Mfr: SIEH4800EW-T1-GE3-X TTI: SIEH4800EW-T1-GE3-X Vishay Availability: 20In StockCut Tape MOSFETs N-CH SINGLE 80V PPAK8X8BWL | 20In Stock | Si | SMD/SMT | PowerPAK-8 | N-Channel | 1 Channel | 80 V | 34 A | 1.15 mOhms | - 20 V, 20 V | 4 V | 278 nC | - 55 C | + 175 C | 3.4 W | Enhancement | Cut Tape |