SIR570DP-T1 - Vishay - MOSFETs
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 150 V | 77.4 A | 7.9 mOhms | - 20 V, 20 V | 4 V | 46.9 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel |