Vishay - MOSFETs
8.190 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI4925DDY-T1-GE3 TTI: SI4925DDY-T1-GE3 Vishay Semiconductors Availability: 72.500In Stock25.000 On Order Expected 30-Sep-26 MOSFETs -30V Vds 20V Vgs SO-8 | 72.500In Stock25.000 On Order Expected 30-Sep-26 | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 30 V | 8 A | 29 mOhms | - 20 V, 20 V | 1 V | 32 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4925DDY-GE3 | |||
Mfr: SI2369DS-T1-GE3 TTI: SI2369DS-T1-GE3 Vishay Semiconductors Availability: 48.000In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 48.000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 7.6 A | 29 mOhms | - 20 V, 20 V | 2.5 V | 11.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2369DS-T1-BE3 | |||
Mfr: SI2347DS-T1-GE3 TTI: SI2347DS-T1-GE3 Vishay Semiconductors Availability: 78.000In Stock60.000 On Order Expected MOSFETs -30V Vds 20V Vgs SOT-23 | 78.000In Stock60.000 On Order Expected | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 5 A | 33 mOhms | - 20 V, 20 V | 2.5 V | 6.9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2347DS-T1-BE3 | |||
Mfr: SUM110P06-07L-E3 TTI: SUM110P06-07L-E3 Vishay Semiconductors Availability: 54.400In Stock7.200 On Order Expected 21-Sep-26 MOSFETs 60V 110A 375W | 54.400In Stock7.200 On Order Expected 21-Sep-26 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 60 V | 110 A | 6.9 mOhms | - 20 V, 20 V | 1 V | 230 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | SUM110P06-07L | |||
Mfr: SI2303CDS-T1-GE3 TTI: SI2303CDS-T1-GE3 Vishay Semiconductors Availability: 42.000In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 42.000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | - 20 V, 20 V | 3 V | 2 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | SI2303CDS-T1-BE3 SI2303BDS-T1-E3-S | |||
Mfr: SI2323DDS-T1-GE3 TTI: SI2323DDS-T1-GE3 Vishay Semiconductors Availability: 3.000In Stock120.000 On Order Expected 24-Nov-27 MOSFETs -20V Vds 8V Vgs SOT-23 | 3.000In Stock120.000 On Order Expected 24-Nov-27 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 5.3 A | 39 mOhms | - 8 V, 8 V | 1 V | 13.6 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2323DDS-T1-BE3 | |||
Mfr: SI4599DY-T1-GE3 TTI: SI4599DY-T1-GE3 Vishay Semiconductors Availability: 7.500In StockMOSFETs -40V Vds 20V Vgs SO-8 N&P PAIR | 7.500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel, P-Channel | 2 Channel | 40 V | 5.8 A, 6.8 A | 35.5 mOhms, 45 mOhms | - 20 V, 20 V | 1.2 V, 1.4 V | 11.7 nC, 25 nC | - 55 C | + 150 C | 3 W, 3.1 W | Enhancement | TrenchFET | Reel | SI4599DY-GE3 | |||
Mfr: IRFL9014TRPBF TTI: IRFL9014TRPBF Vishay Semiconductors Availability: 2.500In Stock12.500 On Order Expected MOSFETs P-Chan 60V 1.1 Amp | 2.500In Stock12.500 On Order Expected | Si | SMD/SMT | SOT-223-4 | P-Channel | 1 Channel | 60 V | 1.8 A | 500 mOhms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL9014TRPBF-BE3 | ||||
Mfr: SI2319DDS-T1-GE3 TTI: SI2319DDS-T1-GE3 Vishay / Siliconix Availability: 9.000In Stock15.000 On Order Expected 15-Oct-26 MOSFETs -40V Vds 20V Vgs SOT-23 | 9.000In Stock15.000 On Order Expected 15-Oct-26 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 40 V | 3.6 A | 75 mOhms | - 20 V, 20 V | 1 V | 12.5 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | |||||
Mfr: SIA440DJ-T1-GE3 TTI: SIA440DJ-T1-GE3 Vishay Semiconductors Availability: 30.000In Stock30.000 On Order Expected 04-Jan-27 MOSFETs 40V Vds 12V Vgs PowerPAK SC-70 | 30.000In Stock30.000 On Order Expected 04-Jan-27 | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 40 V | 12 A | 26 mOhms | - 12 V, 12 V | 600 mV | 21.5 nC | - 50 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUD50P08-25L-E3 TTI: SUD50P08-25L-E3 Vishay Semiconductors Availability: 4.000In StockMOSFETs 80V 50A 136W 25.2mohm @ 10V | 4.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 80 V | 50 A | 25.2 mOhms | - 20 V, 20 V | 1 V | 105 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD50P08-25L-BE3 | |||
Mfr: SUD50P06-15-GE3 TTI: SUD50P06-15-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 60V 50A 113W 15mohm @ 10V | 6.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 15 mOhms | - 20 V, 20 V | 3 V | 40 nC | - 55 C | + 150 C | 113 W | Enhancement | TrenchFET | Reel | SUD50P06-15-BE3 | |||
Mfr: SI4431CDY-T1-GE3 TTI: SI4431CDY-T1-GE3 Vishay Semiconductors Availability: 25.000In StockMOSFETs -30V Vds 20V Vgs SO-8 | 25.000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 9 A | 32 mOhms | - 20 V, 20 V | 1 V | 38 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | SI4431CDY-GE3 | |||
Mfr: SUM110P04-05-E3 TTI: SUM110P04-05-E3 Vishay Semiconductors Availability: 11.200In StockMOSFETs 40V 110A 375W | 11.200In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 40 V | 110 A | 5 mOhms | - 20 V, 20 V | 2 V | 185 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFP460PBF TTI: IRFP460PBF Vishay Semiconductors Availability: 2.225In Stock4.400 On Order Expected MOSFETs N-CH SINGLE 500V TO-247 | 2.225In Stock4.400 On Order Expected | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | - 20 V, 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SI4401DDY-T1-GE3 TTI: SI4401DDY-T1-GE3 Vishay Semiconductors Availability: 10.000In StockMOSFETs -40V Vds 20V Vgs SO-8 | 10.000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 40 V | 16.1 A | 15 mOhms | - 20 V, 20 V | 1.2 V | 64 nC | - 55 C | + 150 C | 6.3 W | Enhancement | TrenchFET | Reel | SI4401DDY-GE3 | |||
Mfr: SI3421DV-T1-GE3 TTI: SI3421DV-T1-GE3 Vishay Semiconductors Availability: 3.000In Stock18.000 On Order Expected MOSFETs -30V Vds 20V Vgs TSOP-6 | 3.000In Stock18.000 On Order Expected | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 19.2 mOhms | - 20 V, 20 V | 1 V | 46 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
5.000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 20 V, 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840PBF-BE3 SIHF840-E3 | |||||
Mfr: SI2302CDS-T1-GE3 TTI: SI2302CDS-T1-GE3 Vishay Semiconductors Availability: 42.000In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 42.000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | - 8 V, 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-BE3 SI2302CDS-GE3 | |||
Mfr: SI2305CDS-T1-GE3 TTI: SI2305CDS-T1-GE3 Vishay Semiconductors Availability: 75.000In Stock75.000 On Order Expected MOSFETs -8V Vds 8V Vgs SOT-23 | 75.000In Stock75.000 On Order Expected | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 8 V | 5.8 A | 35 mOhms | - 8 V, 8 V | 1 V | 12 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2305CDS-T1-BE3 SI2305CDS-GE3 | |||
Mfr: SI4178DY-T1-GE3 TTI: SI4178DY-T1-GE3 Vishay Semiconductors Availability: 10.000In Stock15.000 On Order Expected 17-Sep-26 MOSFETs 30V Vds 25V Vgs SO-8 | 10.000In Stock15.000 On Order Expected 17-Sep-26 | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 12 A | 21 mOhms | - 20 V, 20 V | 1.4 V | 7.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4178DY-GE3 | |||
Mfr: SI9933CDY-T1-GE3 TTI: SI9933CDY-T1-GE3 Vishay Semiconductors Availability: 5.000In StockMOSFETs -20V Vds 12V Vgs SO-8 | 5.000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 20 V | 4 A | 58 mOhms | - 12 V, 12 V | 600 mV | 17 nC | - 50 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI9933CDY-GE3 | |||
Mfr: SI4848DY-T1-GE3 TTI: SI4848DY-T1-GE3 Vishay Semiconductors Availability: 82.500In Stock90.000 On Order Expected 01-Dec-27 MOSFETs 150V Vds 20V Vgs SO-8 | 82.500In Stock90.000 On Order Expected 01-Dec-27 | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 3.7 A | 85 mOhms | - 20 V, 20 V | 2 V | 21 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI4848DY-GE3 | |||
Mfr: SUD50P04-08-GE3 TTI: SUD50P04-08-GE3 Vishay Semiconductors Availability: 4.000In StockMOSFETs 40V 50A P-CH MOSFET | 4.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 50 A | 8.1 mOhms | - 20 V, 20 V | 2.5 V | 159 nC | - 55 C | + 150 C | 73.5 W | Enhancement | TrenchFET | Reel | SUD50P04-08-BE3 | |||
Mfr: SI4134DY-T1-GE3 TTI: SI4134DY-T1-GE3 Vishay Semiconductors Availability: 72.500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 72.500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 14 A | 14 mOhms | - 20 V, 20 V | 1.2 V | 23 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4134DY-GE3 |
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