MOSFETs
15.910 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: IRFI640GPBF TTI: IRFI640GPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 200V TO220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9.8 A | 180 mOhms | - 20 V, 20 V | 2 V | 70 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | |||||
Mfr: SI7113ADN-T1-GE3 TTI: SI7113ADN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -100V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 100 V | 10.8 A | 132 mOhms | - 20 V, 20 V | 2.6 V | 10.9 nC | - 55 C | + 150 C | 27.8 W | Enhancement | Reel | |||||
Mfr: SI2323CDS-T1-GE3 TTI: SI2323CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 6 A | 39 mOhms | - 8 V, 8 V | 1 V | 9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2323CDS-T1-BE3 SI2323CDS-GE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | - 20 V, 20 V | 4 V | 72 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRF540PBF-BE3 | |||||
Mfr: SI7461DP-T1-GE3 TTI: SI7461DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 60 V | 14.4 A | 14.5 mOhms | - 20 V, 20 V | 3 V | 121 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7461DP-GE3 | |||
Mfr: SI3433CDV-T1-GE3 TTI: SI3433CDV-T1-GE3 Vishay Semiconductors Availability: 0In Stock36.000 On Order Expected 10-May-28 MOSFETs -20V Vds 8V Vgs TSOP-6 | 0In Stock36.000 On Order Expected 10-May-28 | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 6 A | 38 mOhms | - 8 V, 8 V | 1 V | 18 nC | - 55 C | + 150 C | 3.3 W | Enhancement | TrenchFET | Reel | SI3433CDV-T1-BE3 SI3433CDV-GE3 | |||
Mfr: SI2365EDS-T1-GE3 TTI: SI2365EDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 5.9 A | 26.5 mOhms | - 8 V, 8 V | 1 V | 13.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2365EDS-T1-BE3 SI4816DY-T1-E3-S | |||
0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 80 V | 4.6 A | 93 mOhms | - 20 V, 20 V | 1.2 V | 4.9 nC | - 55 C | + 150 C | 3.6 W | Enhancement | TrenchFET | Reel | SI3476DV-T1-BE3 | ||||
Mfr: SI1317DL-T1-GE3 TTI: SI1317DL-T1-GE3 Vishay Semiconductors Availability: 0In Stock9.000 On Order Expected 07-Jan-27 MOSFETs -20V Vds 8V Vgs SC70-3 | 0In Stock9.000 On Order Expected 07-Jan-27 | Si | SMD/SMT | SOT-323-3 | P-Channel | 1 Channel | 20 V | 1.4 A | 150 mOhms | - 8 V, 8 V | 800 mV | 4.3 nC | - 50 C | + 150 C | 280 mW | Enhancement | TrenchFET | Reel | SI1317DL-T1-BE3 SI1307EDL-T1-GE3 | |||
Mfr: SI7461DP-T1-E3 TTI: SI7461DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 60 V | 14.4 A | 14.5 mOhms | - 20 V, 20 V | 3 V | 121 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7461DP-E3 | |||
Mfr: SI7850DP-T1-E3 TTI: SI7850DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 6.2 A | 22 Ohms | - 20 V, 20 V | 3 V | 18 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI7850DP-E3 | |||
Mfr: IRFL110TRPBF TTI: IRFL110TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 100V 1.5 Amp | 0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | - 20 V, 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL110TRPBF-BE3 | ||||
Mfr: SI1553CDL-T1-GE3 TTI: SI1553CDL-T1-GE3 Vishay Semiconductors Availability: 0In Stock54.000 On Order Expected MOSFETs -20V Vds 12V Vgs SC70-6 N&P PAIR | 0In Stock54.000 On Order Expected | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 20 V | 700 mA | 390 mOhms, 850 mOhms | - 12 V, 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 340 mW | Enhancement | TrenchFET | Reel | SI1553CDL-T1-BE3 SI1553DL-T1-GE3 SI1563DH-T1-GE3 SI1563EDH-T1-GE3 SI1555DL-T1-E3-S | |||
Mfr: IRF9520PBF TTI: IRF9520PBF Vishay Semiconductors Availability: 0In Stock3.000 On Order Expected 07-Jul-26 MOSFETs P-CH SINGLE -100V TO220 | 0In Stock3.000 On Order Expected 07-Jul-26 | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 6.8 A | 600 mOhms | - 20 V, 20 V | 4 V | 18 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | IRF9520PBF-BE3 | ||||
Mfr: SI3127DV-T1-GE3 TTI: SI3127DV-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -60V Vds 20V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 60 V | 5.1 A | 146 mOhms | - 20 V, 20 V | 3 V | 30 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIA446DJ-T1-GE3 TTI: SIA446DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 150 V | 7.7 A | 145 mOhms | - 20 V, 20 V | 2.5 V | 8 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFBG30PBF TTI: IRFBG30PBF Vishay Semiconductors Availability: 1.000In StockMOSFETs N-CH SINGLE 1KV TO-220 | 1.000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | - 20 V, 20 V | 4 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBG30PBF-BE3 | ||||
Mfr: SI7489DP-T1-GE3 TTI: SI7489DP-T1-GE3 Vishay Semiconductors MOSFETs -100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 100 V | 28 A | 41 mOhms | - 20 V, 20 V | 1 V | 106 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7489DP-GE3 | |||
Mfr: SI7288DP-T1-GE3 TTI: SI7288DP-T1-GE3 Vishay Semiconductors Availability: 0In Stock3.000 On Order Expected 07-Jul-26 MOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock3.000 On Order Expected 07-Jul-26 | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 40 V | 20 A | 19 mOhms | - 20 V, 20 V | 1.2 V | 15 nC | - 55 C | + 150 C | 15.6 W | Enhancement | TrenchFET | Reel | SI7288DP-GE3 | |||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 15 mOhms | - 20 V, 20 V | 3 V | 40 nC | - 55 C | + 150 C | 113 W | Enhancement | TrenchFET | Reel | SUD50P06-15-BE3 | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 40 V | 4.3 A | 51 mOhms | - 12 V, 12 V | 1.5 V | 3.8 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2356DS-T1-BE3 | ||||
Mfr: SI2304DDS-T1-GE3 TTI: SI2304DDS-T1-GE3 Vishay Semiconductors Availability: 0In Stock36.000 On Order Expected 20-Feb-29 MOSFETs 30V Vds 20V Vgs SOT-23 | 0In Stock36.000 On Order Expected 20-Feb-29 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.6 A | 60 mOhms | - 20 V, 20 V | 1.2 V | 6.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2304DDS-T1-BE3 SI2304DDS-GE3 | |||
Mfr: SI2393DS-T1-GE3 TTI: SI2393DS-T1-GE3 Vishay Semiconductors Availability: 0In Stock15.000 On Order Expected MOSFETs 30-V (D-S) MOSFET P-CHANNEL | 0In Stock15.000 On Order Expected | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 7.5 A | 22.7 mOhms | - 20 V, 16 V | 2.2 V | 16.8 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUM110P06-08L-E3 TTI: SUM110P06-08L-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V 110A 272W 8.0mohm @ 10V | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 60 V | 110 A | 8 mOhms | - 20 V, 20 V | 1 V | 160 nC | - 55 C | + 175 C | 272 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7135DP-T1-GE3 TTI: SI7135DP-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -30V Vds 20V Vgs PowerPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 60 A | 3.9 mOhms | - 20 V, 20 V | 3 V | 167 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7135DP-GE3 |