MOSFETs
15.954 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SUM55P06-19L-E3 TTI: SUM55P06-19L-E3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V 55A 125W | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 60 V | 55 A | 19 mOhms | 20 V | 1 V | 76 nC | - 55 C | + 175 C | 125 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7135DP-T1-GE3 TTI: SI7135DP-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs -30V Vds 20V Vgs PowerPAK SO-8 | 6.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 60 A | 3.9 mOhms | 20 V | 3 V | 167 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7135DP-GE3 | |||
Mfr: SI2301CDS-T1-E3 TTI: SI2301CDS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.1 A | 112 mOhms | 8 V | 400 mV | 10 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI2301CDS-T1-BE3 SI2301CDS-E3 | |||
Mfr: IXFH110N10P TTI: IXFH110N10P IXYS Availability: 0In Stock2.580 On Order Expected MOSFETs 110 Amps 100V 0.015 Rds | 0In Stock2.580 On Order Expected | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 110 A | 15 mOhms | 20 V | 5 V | 110 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SI1553CDL-T1-GE3 TTI: SI1553CDL-T1-GE3 Vishay Semiconductors Availability: 0In Stock63.000 On Order Expected MOSFETs -20V Vds 12V Vgs SC70-6 N&P PAIR | 0In Stock63.000 On Order Expected | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 20 V | 700 mA | 390 mOhms, 850 mOhms | 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 340 mW | Enhancement | TrenchFET | Reel | SI1553CDL-T1-BE3 SI1553DL-T1-GE3 SI1563DH-T1-GE3 SI1563EDH-T1-GE3 SI1555DL-T1-E3-S | |||
Mfr: SIA447DJ-T1-GE3 TTI: SIA447DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -12V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 12 V | 12 A | 11 mOhms | 8 V | 850 mV | 80 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA447DJ-GE3 | |||
0In Stock450 On Order Expected 30-Dec-27 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 4.5 A | 1.5 Ohms | 20 V | 4 V | 38 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF830PBF-BE3 SIHF830-E3 | |||||
Mfr: SI9926CDY-T1-GE3 TTI: SI9926CDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 12V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 20 V | 8 A | 18 mOhms | 12 V | 600 mV | 22 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI9926CDY-GE3 | |||
Mfr: SIS176LDN-T1-GE3 TTI: SIS176LDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 70V PPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 70 V | 42.3 A | 10.9 mOhms | 12 V | 1.6 V | 12.6 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4564DY-T1-GE3 TTI: SI4564DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N/P-CH 40V SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel, P-Channel | 2 Channel | 40 V | 9.2 A, 10 A | 17.5 mOhms, 21 mOhms | 20 V | 800 mV, 1.2 V | 20.5 nC, 41.5 nC | - 55 C | + 150 C | 3.1 W, 3.2 W | Enhancement | TrenchFET | Reel | SI4542DY-T1-E3-S | |||
Mfr: SI7288DP-T1-GE3 TTI: SI7288DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 40 V | 20 A | 19 mOhms | 20 V | 1.2 V | 15 nC | - 55 C | + 150 C | 15.6 W | Enhancement | TrenchFET | Reel | SI7288DP-GE3 | |||
Mfr: SIA910EDJ-T1-GE3 TTI: SIA910EDJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 12 V | 4.5 A | 28 mOhms | 8 V | 400 mV | 16 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA910EDJ-GE3 | |||
Mfr: SI3585CDV-T1-GE3 TTI: SI3585CDV-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs TSOP-6 N&P PAIR | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel, P-Channel | 2 Channel | 20 V | 2.1 A, 3.9 A | 58 mOhms, 195 mOhms | 8 V | 600 mV | 3.2 nC, 6 nC | - 55 C | + 150 C | 1.3 W, 1.4 W | Enhancement | TrenchFET | Reel | SI3585CDV-GE3 | |||
Mfr: IRF640STRRPBF TTI: IRF640STRRPBF Vishay Semiconductors Availability: 0In Stock1.600 On Order Expected 05-Jan-27 MOSFETs N-Chan 200V 18 Amp | 0In Stock1.600 On Order Expected 05-Jan-27 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | 20 V | 2 V | 70 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: SI4100DY-T1-GE3 TTI: SI4100DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 6.8 A | 63 mOhms | 20 V | 2 V | 20 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4100DY-GE3 | |||
Mfr: SUD50P10-43L-E3 TTI: SUD50P10-43L-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V 37A 136W 43mohm @ 10V | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 37.1 A | 43 mOhms | 20 V | 1 V | 106 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD50P10-43L-BE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 3.3 A | 1.5 Ohms | 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 36 W | Enhancement | Tube | IRF610PBF-BE3 | |||||
Mfr: IRFU9310PBF TTI: IRFU9310PBF Vishay Semiconductors Availability: 525In Stock1.425 On Order Expected 10-Nov-26 MOSFETs P-Chan 400V 1.8 Amp | 525In Stock1.425 On Order Expected 10-Nov-26 | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||
Mfr: SIR4409DP-T1-RE3 TTI: SIR4409DP-T1-RE3 Vishay / Siliconix Availability: 0In Stock9.000 On Order Expected 02-Apr-27 MOSFETs P-CH SINGLE -40V PPAK SO-8 | 0In Stock9.000 On Order Expected 02-Apr-27 | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 40 V | 60.6 A | 9 mOhms | 20 V | 2.3 V | 38.1 nC | - 55 C | + 150 C | 59.5 W | Enhancement | Reel | |||||
Mfr: SI2371EDS-T1-GE3 TTI: SI2371EDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 12V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 4.8 A | 45 mOhms | 12 V | 1.5 V | 10.6 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2371EDS-T1-BE3 | |||
Mfr: SI7450DP-T1-GE3 TTI: SI7450DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 5.3 A | 80 mOhms | 20 V | 4.5 V | 42 nC | - 55 C | + 150 C | 5.2 W | Enhancement | TrenchFET | Reel | SI7450DP-GE3 | |||
Mfr: SIS434DN-T1-GE3 TTI: SIS434DN-T1-GE3 Vishay Semiconductors MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 35 A | 6.3 mOhms | 20 V | 1.2 V | 40 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS434DN-GE3 | |||
Mfr: SISA12ADN-T1-GE3 TTI: SISA12ADN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs For New Design See: 78-SISHA12ADN-T1-GE3 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 25 A | 3.2 mOhms | - 16 V, 20 V | 1.1 V | 45 nC | - 55 C | + 150 C | 28 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
3.850In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | 20 V | 4 V | 70 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF640PBF-BE3 | |||||
Mfr: SIA931DJ-T1-GE3 TTI: SIA931DJ-T1-GE3 Vishay Semiconductors Availability: 9.000In Stock42.000 On Order Expected 08-Jun-27 MOSFETs -30V Vds 20V Vgs PowerPAK SC-70 | 9.000In Stock42.000 On Order Expected 08-Jun-27 | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 30 V | 4.5 A | 65 mOhms | 20 V | 1.2 V | 13 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel |