MOSFETs
15.954 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIS434DN-T1-GE3 TTI: SIS434DN-T1-GE3 Vishay Semiconductors MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 35 A | 6.3 mOhms | 20 V | 1.2 V | 40 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS434DN-GE3 | |||
Mfr: SISA12ADN-T1-GE3 TTI: SISA12ADN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs For New Design See: 78-SISHA12ADN-T1-GE3 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 25 A | 3.2 mOhms | - 16 V, 20 V | 1.1 V | 45 nC | - 55 C | + 150 C | 28 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
3.850In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | 20 V | 4 V | 70 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF640PBF-BE3 | |||||
Mfr: SIA931DJ-T1-GE3 TTI: SIA931DJ-T1-GE3 Vishay Semiconductors Availability: 9.000In Stock42.000 On Order Expected 08-Jun-27 MOSFETs -30V Vds 20V Vgs PowerPAK SC-70 | 9.000In Stock42.000 On Order Expected 08-Jun-27 | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 30 V | 4.5 A | 65 mOhms | 20 V | 1.2 V | 13 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS71DN-T1-GE3 TTI: SISS71DN-T1-GE3 Vishay Semiconductors Availability: 0In Stock18.000 On Order Expected 18-Sep-29 MOSFETs -100V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock18.000 On Order Expected 18-Sep-29 | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 100 V | 23 A | 47 mOhms | 20 V | 2.5 V | 30 nC | - 50 C | + 150 C | 57 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SI4532CDY-T1-GE3 TTI: SI4532CDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 N&P PAIR | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel, P-Channel | 2 Channel | 30 V | 4.3 A, 6 A | 47 mOhms, 89 mOhms | 20 V | 1 V | 6 nC, 7.8 nC | - 55 C | + 150 C | 2.78 W | Enhancement | TrenchFET | Reel | SI4532CDY-GE3 | |||
Mfr: SI3457CDV-T1-GE3 TTI: SI3457CDV-T1-GE3 Vishay Semiconductors Availability: 0In Stock6.000 On Order Expected 25-Apr-29 MOSFETs -30V Vds 20V Vgs TSOP-6 | 0In Stock6.000 On Order Expected 25-Apr-29 | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 5.1 A | 74 mOhms | 20 V | 3 V | 15 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI3457CDV-T1-BE3 SI3457BDV-T1-E3-S | |||
Mfr: SI4463CDY-T1-GE3 TTI: SI4463CDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 20 V | 18.6 A | 8 mOhms | 12 V | 600 mV | 108 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 64 A | 32 mOhms | 20 V | 2.5 V | 100 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 60 V | 600 mA | 1 Ohms | 15 V | 3.1 V | - 55 C | + 150 C | 1.1 W | Depletion | Clare | Reel | ||||||
Mfr: SI4896DY-T1-GE3 TTI: SI4896DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 80 V | 9.5 A | 16.5 mOhms | 20 V | 2 V | 41 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4896DY-GE3 | |||
Mfr: SI1016CX-T1-GE3 TTI: SI1016CX-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs SC89-6 N&P PAIR | 0In Stock | Si | SMD/SMT | SC-89-6 | N-Channel, P-Channel | 2 Channel | 20 V | 350 mA, 500 mA | 396 mOhms, 756 mOhms | 8 V | 400 mV | 1.3 nC, 1.65 nC | - 55 C | + 150 C | 220 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SI3453DV-T1-GE3 TTI: SI3453DV-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -30V Vds 20V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 3.4 A | 276 mOhms | 20 V | 2.5 V | 6.8 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 10.3 A | 26 mOhms | 20 V | 1.2 V | 12 nC | - 55 C | + 150 C | 5.6 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 350 V | 5 mA | 8 Ohms | 20 V | 3.6 V | - 40 C | + 110 C | 2.5 W | Depletion | Clare | Reel | ||||||
0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 600 V | 99 A | 23 mOhms | 30 V | 3 V | 228 nC | - 55 C | + 150 C | 524 W | Enhancement | Tube | ||||||
Mfr: SISS05DN-T1-GE3 TTI: SISS05DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -30V PPAK1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 108 A | 5.8 mOhms | - 20 V, 16 V | 2.2 V | 76 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 120 A | 12 mOhms | 20 V | 2.5 V | 122 nC | - 55 C | + 150 C | 480 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Tube | ||||||||||||||||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 150 V | 25 A | 52 mOhms | 20 V | 2 V | 40 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD25N15-52-BE3 | ||||
Mfr: IRFZ44STRLPBF TTI: IRFZ44STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 60V 50 Amp | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | 20 V | 2 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 39 A | 2.75 mOhms | 20 V | 1 V | 70 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4126DY-GE3 | ||||
Mfr: SI7439DP-T1-GE3 TTI: SI7439DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 150 V | 5.2 A | 90 mOhms | 20 V | 2 V | 88 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7439DP-GE3 | |||
Mfr: IRFR9214TRLPBF TTI: IRFR9214TRLPBF Vishay Semiconductors Availability: 0In Stock6.000 On Order Expected 10-Nov-26 MOSFETs P-CH SINGLE -250V TO252 | 0In Stock6.000 On Order Expected 10-Nov-26 | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 250 V | 2.7 A | 3 Ohms | 20 V | 4 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | |||||
Mfr: SIS862DN-T1-GE3 TTI: SIS862DN-T1-GE3 Vishay Semiconductors Availability: 0In Stock12.000 On Order Expected 20-Dec-28 MOSFETs 60V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock12.000 On Order Expected 20-Dec-28 | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 60 V | 40 A | 7 mOhms | 20 V | 1.5 V | 32 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel |