MOSFETs
15.954 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SIR510DP-T1-RE3 TTI: SIR510DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 100V PPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 126 A | 3.6 mOhms | 20 V | 4 V | 54 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SISS60DN-T1-GE3 TTI: SISS60DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 30V PPAK1212-8SH | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 181.8 A | 1.31 mOhms | - 12 V, 16 V | 1 V | 57 nC | - 55 C | + 150 C | 65.8 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SIR606BDP-T1-RE3 TTI: SIR606BDP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 38.7 A | 14.5 mOhms | 20 V | 2 V | 20 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI4464DY-T1-E3 TTI: SI4464DY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 200 V | 2.2 A | 240 mOhms | 20 V | 2 V | 18 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI4464DY-T1 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 320 A | 3.5 mOhms | 20 V | 4 V | 430 nC | - 55 C | + 175 C | 1 kW | Enhancement | HiPerFET | Tube | |||||
Mfr: SI5513CDC-T1-GE3 TTI: SI5513CDC-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 12V Vgs 1206-8 ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel, P-Channel | 2 Channel | 30 V | 3.7 A, 4 A | 55 mOhms, 150 mOhms | 12 V | 600 mV, 1.5 V | 4.2 nC, 5.6 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5509DC-T1-GE3 | |||
Mfr: SI2300DS-T1-GE3 TTI: SI2300DS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 12V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.6 A | 68 mOhms | 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2300DS-T1-BE3 SI2300DS-GE3 | |||
Mfr: SIHFR420A-GE3 TTI: SIHFR420A-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 500V Vds 30V Vgs DPAK (TO-252) | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 3.3 A | 3 Ohms | 30 V | 2 V | 17 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | |||||
Mfr: SIS890DN-T1-GE3 TTI: SIS890DN-T1-GE3 Vishay Semiconductors MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 30 A | 19.5 mOhms | 20 V | 1.5 V | 29 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SIS890DN-GE3 | |||
Mfr: SIDR680DP-T1-GE3 TTI: SIDR680DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8DC | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 80 V | 100 A | 3.4 mOhms | 20 V | 2 V | 69.5 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 5.97 A | 100 mOhms | 12 V | 1.5 V | 7.53 nC | - 55 C | + 150 C | 3.2 W | Enhancement | TrenchFET | Reel | SI3443CDV-T1-BE3 SI3443CDV-GE3 | ||||
Mfr: SI4931DY-T1-GE3 TTI: SI4931DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -12V Vds 8V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 12 V | 8.9 A | 18 mOhms | 8 V | 400 mV | 52 nC | - 55 C | + 150 C | 2 W | Enhancement | TrenchFET | Reel | SI4931DY-GE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 15 A | 480 mOhms | 20 V | 4.5 V | 123 nC | - 55 C | + 150 C | 300 W | Enhancement | Linear L2 | Tube | |||||
Mfr: SI7852DP-T1-E3 TTI: SI7852DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 7.6 A | 16.5 mOhms | 20 V | 2 V | 34 nC | - 55 C | + 150 C | 1.9 W | Enhancement | TrenchFET | Reel | SI7852DP-E3 | |||
Mfr: SI7439DP-T1-E3 TTI: SI7439DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 150 V | 5.2 A | 90 mOhms | 20 V | 2 V | 88 nC | - 55 C | + 150 C | 5.4 W | Enhancement | TrenchFET | Reel | SI7439DP-E3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 80 A | 38 mOhms | 30 V | 2.7 V | 137 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIRB40DP-T1-GE3 TTI: SIRB40DP-T1-GE3 Vishay Semiconductors Availability: 0In Stock6.000 On Order Expected 21-Mar-29 MOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock6.000 On Order Expected 21-Mar-29 | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 40 V | 40 A | 3.25 mOhms | - 16 V, 20 V | 1.1 V | 93 nC | - 55 C | + 150 C | 46.2 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUG90090E-GE3 TTI: SUG90090E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds ThunderFET 100A Id +/-20V Vgs | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 100 A | 7.9 mOhms | 20 V | 2 V | 129 nC | - 55 C | + 175 C | 395 W | Enhancement | Bulk | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 800 mA | 21 Ohms | 20 V | 4 V | 14.6 nC | - 55 C | + 150 C | 60 W | Depletion | Tube | ||||||
Mfr: IXFK98N50P3 TTI: IXFK98N50P3 IXYS Availability: 0In StockMOSFETs 500V 98A 0.05Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 98 A | 50 mOhms | 30 V | 5 V | 197 nC | - 55 C | + 150 C | 1.3 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | ||||||
Mfr: IRFIBC20GPBF TTI: IRFIBC20GPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 600V TO220 | 0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 30 V | 2 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | ||||||
Mfr: IRFP240PBF TTI: IRFP240PBF Vishay Semiconductors Availability: 0In Stock400 On Order Expected 01-Sep-27 MOSFETs N-CH SINGLE 200V TO247 | 0In Stock400 On Order Expected 01-Sep-27 | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 20 A | 180 mOhms | 20 V | 2 V | 70 nC | - 55 C | + 150 C | 150 W | Enhancement | Tube | |||||
Mfr: SIHFL110TR-GE3 TTI: SIHFL110TR-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V Vds 20V Vgs SOT-223 | 0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | 20 V | 2 V | 8.3 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | SIHFL110TR-BE3 |