MOSFETs
15.910 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI2309CDS-T1-E3 TTI: SI2309CDS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -60V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 60 V | 1.6 A | 345 mOhms | - 20 V, 20 V | 3 V | 4.1 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2309CDS-T1-BE3 SI2309CDS-E3 | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 150 V | 36 A | 110 mOhms | - 20 V, 20 V | 2.5 V | 55 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | |||||
0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 12 V | 4.5 A | 33 mOhms, 33 mOhms | - 8 V, 8 V | 1 V | 26 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA975DJ-GE3 | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | - 20 V, 20 V | 2 V | 120 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 28 A | 4.2 mOhms | - 20 V, 20 V | 1.4 V | 100 nC | - 55 C | + 150 C | 6.25 W | Enhancement | TrenchFET | Reel | SI4842BDY-E3 | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 12 A | 1.3 Ohms | - 30 V, 30 V | 3.5 V | 155 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 140 A | 11 mOhms | - 20 V, 20 V | 5 V | 155 nC | - 55 C | + 175 C | 600 W | Enhancement | PolarHT | Tube | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 27.2 A | 4.5 mOhms | - 25 V, 25 V | 1.2 V | 95 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4122DY-GE3 | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | - 20 V, 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel, P-Channel | 2 Channel | 12 V | 4.5 A | 29 mOhms, 61 mOhms | - 8 V, 8 V | 400 mV | 15 nC, 20 nC | - 55 C | + 150 C | 6.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA517DJ-GE3 | ||||
Mfr: IXFP4N85XM TTI: IXFP4N85XM IXYS Availability: 0In StockMOSFETs 850V/3.5A UlJun XCl HiPerFET Pwr MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 850 V | 3.5 A | 2.5 Ohms | - 30 V, 30 V | 3 V | 7 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SUD09P10-195-GE3 TTI: SUD09P10-195-GE3 Vishay Semiconductors Availability: 0In Stock6.000 On Order Expected MOSFETs -100V 195mOhms@ 10V -8.8A | 0In Stock6.000 On Order Expected | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 8.8 A | 195 mOhms | - 20 V, 20 V | 2.5 V | 23.2 nC | - 55 C | + 150 C | 113.6 W | Enhancement | TrenchFET | Reel | SUD09P10-195-BE3 | |||
Mfr: SIR172ADP-T1-GE3 TTI: SIR172ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 24 A | 8.5 mOhms | - 20 V, 20 V | 1.2 V | 44 nC | - 55 C | + 150 C | 29.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 6 A | 31.8 mOhms | - 8 V, 8 V | 1 V | 8.8 nC | - 55 C | + 150 C | 2.1 W | Enhancement | Reel | SI2312CDS-T1-GE3 | |||||
Mfr: SIJH600E-T1-GE3 TTI: SIJH600E-T1-GE3 Vishay Semiconductors Availability: 0In Stock202.000 On Order Expected MOSFETs N-CH SINGLE 60V PPAK 8X8L | 0In Stock202.000 On Order Expected | Si | SMD/SMT | PowerPak-8 | 60 V | - 20 V, 20 V | 4 V | 141 nC | - 55 C | + 175 C | 333 W | Enhancement | Reel | |||||||||
Mfr: IRFI720GPBF TTI: IRFI720GPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 400V TO220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 2.6 A | 1.8 Ohms | - 20 V, 20 V | 2 V | 20 nC | - 55 C | + 150 C | 30 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 29 A | 28.5 mOhms | - 20 V, 20 V | 2 V | 21 nC | - 55 C | + 150 C | 69.5 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
Mfr: SIDR626DP-T1-GE3 TTI: SIDR626DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8DC | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 100 A | 1.7 mOhms | - 20 V, 20 V | 2 V | 68 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR167DP-T1-GE3 TTI: SIR167DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -30V Vds 25V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 60 A | 4.6 mOhms | - 25 V, 25 V | 2.5 V | 74 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR622DP-T1-GE3 TTI: SIR622DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 51.6 A | 17.7 mOhms | - 20 V, 20 V | 2.5 V | 27 nC | - 55 C | + 150 C | 104 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 4.3 mOhms | - 16 V, 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 38 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
Mfr: SIHF6N65E-GE3 TTI: SIHF6N65E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 650V Vds 30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 7 A | 600 mOhms | - 30 V, 30 V | 4 V | 24 nC | - 55 C | + 150 C | 31 W | Enhancement | Tube | |||||
Mfr: TPC8125,LQ(S TTI: TPC8125,LQ(S Toshiba Availability: 0In StockMOSFETs P-Ch -30V FET 2580pF -10A 1.9W | 0In Stock | Si | SMD/SMT | SOP-8 | P-Channel | 1 Channel | 30 V | 10 A | 17 mOhms | - 25 V, 20 V | 2 V | 64 nC | - 55 C | + 150 C | 1.9 W | Enhancement | U-MOSVI | Reel | ||||
Mfr: SI7956DP-T1-GE3 TTI: SI7956DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 150 V | 4.1 A | 105 mOhms | - 20 V, 20 V | 4 V | 17 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI7956DP-GE3 | |||
Mfr: SI2377EDS-T1-GE3 TTI: SI2377EDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 4.4 A | 61 mOhms | - 8 V, 8 V | 1 V | 7.6 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2377EDS-T1-BE3 SI2377EDS-GE3 |
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