MOSFETs
15.954 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 1.8 mOhms | - 16 V, 20 V | 1.1 V | 77 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA04DP-GE3 | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | 20 V | 2 V | 120 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | ||||||
Mfr: SISH101DN-T1-GE3 TTI: SISH101DN-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds; +/-25V Vgs PowerPAK 1212-8SH | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8SH-8 | P-Channel | 1 Channel | 30 V | 35 A | 7.2 mOhms | 25 V | 2.5 V | 102 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET; PowerPAK | Reel | ||||
Mfr: SIS438DN-T1-GE3 TTI: SIS438DN-T1-GE3 Vishay Semiconductors MOSFETs 20V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 16 A | 9.5 mOhms | 20 V | 1 V | 23 nC | - 55 C | + 150 C | 27.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS438DN-GE3 | |||
Mfr: SIA517DJ-T1-GE3 TTI: SIA517DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel, P-Channel | 2 Channel | 12 V | 4.5 A | 29 mOhms, 61 mOhms | 8 V | 400 mV | 15 nC, 20 nC | - 55 C | + 150 C | 6.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA517DJ-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 27.2 A | 4.5 mOhms | 25 V | 1.2 V | 95 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4122DY-GE3 | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 33 A | 6 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 14.7 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
Mfr: SI7846DP-T1-E3 TTI: SI7846DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 150V PPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 24.5 A | 50 mOhms | 20 V | 4.5 V | 30 nC | - 55 C | + 150 C | 1.9 W | Enhancement | TrenchFET | Reel | SI7846DP-E3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 29 A | 125 mOhms | 30 V | 4 V | 85 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | ||||||
Mfr: SI2312CDS-T1-BE3 TTI: SI2312CDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 20V TO236 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 6 A | 31.8 mOhms | 8 V | 1 V | 8.8 nC | - 55 C | + 150 C | 2.1 W | Enhancement | Reel | SI2312CDS-T1-GE3 | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 30 A | 85 mOhms | 20 V | 2 V | 140 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 12 A | 1.3 Ohms | 30 V | 3.5 V | 155 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 140 A | 11 mOhms | 20 V | 5 V | 155 nC | - 55 C | + 175 C | 600 W | Enhancement | PolarHT | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | ||||||
Mfr: IRF9630PBF TTI: IRF9630PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -200V TO220 | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 6.5 A | 800 mOhms | 20 V | 4 V | 29 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF9630PBF-BE3 | ||||
Mfr: IRFBC40ASTRLPBF TTI: IRFBC40ASTRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 600V 6.2 Amp | 0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 30 V | 2 V | 42 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: SIJA58ADP-T1-GE3 TTI: SIJA58ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds; 20/-16V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 40 V | 32.3 A | 2.65 mOhms | - 16 V, 20 V | 1.1 V | 61 nC | - 55 C | + 150 C | 56.8 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 18 A | 400 mOhms | 30 V | 3 V | 50 nC | - 55 C | + 150 C | 360 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 28 A | 4.2 mOhms | 20 V | 1.4 V | 100 nC | - 55 C | + 150 C | 6.25 W | Enhancement | TrenchFET | Reel | SI4842BDY-E3 | ||||
Mfr: SUM70030E-GE3 TTI: SUM70030E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds; 20V Vgs TO-263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 150 A | 2.88 mOhms | 20 V | 2 V | 214 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 150 V | 36 A | 110 mOhms | 20 V | 2.5 V | 55 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | |||||
Mfr: SISA35DN-T1-GE3 TTI: SISA35DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs P-CHANNEL 30-V (D-S) PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 16 A | 19 mOhms | 20 V | 2.2 V | 28 nC | - 55 C | + 150 C | 24 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUD50P06-15L-E3 TTI: SUD50P06-15L-E3 Vishay Semiconductors Availability: 0In Stock10.000 On Order Expected 24-Feb-27 MOSFETs P-CH 60V 50A | 0In Stock10.000 On Order Expected 24-Feb-27 | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 15 mOhms | 20 V | 3 V | 110 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIA485DJ-T1-GE3 TTI: SIA485DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -150V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 150 V | 1.6 A | 2.7 Ohms | 20 V | 4.5 V | 6.3 nC | - 55 C | + 150 C | 15.6 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 300 V | 26 A | 66 mOhms | 20 V | 2.5 V | 22 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube |