MOSFETs
15.954 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI7846DP-T1-E3 TTI: SI7846DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 150V PPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 24.5 A | 50 mOhms | 20 V | 4.5 V | 30 nC | - 55 C | + 150 C | 1.9 W | Enhancement | TrenchFET | Reel | SI7846DP-E3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 29 A | 125 mOhms | 30 V | 4 V | 85 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | ||||||
Mfr: SI2312CDS-T1-BE3 TTI: SI2312CDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 20V TO236 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 6 A | 31.8 mOhms | 8 V | 1 V | 8.8 nC | - 55 C | + 150 C | 2.1 W | Enhancement | Reel | SI2312CDS-T1-GE3 | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 30 A | 85 mOhms | 20 V | 2 V | 140 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 12 A | 1.3 Ohms | 30 V | 3.5 V | 155 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 140 A | 11 mOhms | 20 V | 5 V | 155 nC | - 55 C | + 175 C | 600 W | Enhancement | PolarHT | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | ||||||
Mfr: IRF9630PBF TTI: IRF9630PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -200V TO220 | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 6.5 A | 800 mOhms | 20 V | 4 V | 29 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF9630PBF-BE3 | ||||
Mfr: IRFBC40ASTRLPBF TTI: IRFBC40ASTRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 600V 6.2 Amp | 0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 30 V | 2 V | 42 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: SIJA58ADP-T1-GE3 TTI: SIJA58ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds; 20/-16V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 40 V | 32.3 A | 2.65 mOhms | - 16 V, 20 V | 1.1 V | 61 nC | - 55 C | + 150 C | 56.8 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 18 A | 400 mOhms | 30 V | 3 V | 50 nC | - 55 C | + 150 C | 360 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 28 A | 4.2 mOhms | 20 V | 1.4 V | 100 nC | - 55 C | + 150 C | 6.25 W | Enhancement | TrenchFET | Reel | SI4842BDY-E3 | ||||
Mfr: SUM70030E-GE3 TTI: SUM70030E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds; 20V Vgs TO-263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 150 A | 2.88 mOhms | 20 V | 2 V | 214 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 150 V | 36 A | 110 mOhms | 20 V | 2.5 V | 55 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | |||||
Mfr: SI4463CDY-T1-GE3 TTI: SI4463CDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 20 V | 18.6 A | 8 mOhms | 12 V | 600 mV | 108 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 64 A | 32 mOhms | 20 V | 2.5 V | 100 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 60 V | 600 mA | 1 Ohms | 15 V | 3.1 V | - 55 C | + 150 C | 1.1 W | Depletion | Clare | Reel | ||||||
Mfr: SI4896DY-T1-GE3 TTI: SI4896DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 80 V | 9.5 A | 16.5 mOhms | 20 V | 2 V | 41 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4896DY-GE3 | |||
Mfr: SI1016CX-T1-GE3 TTI: SI1016CX-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs SC89-6 N&P PAIR | 0In Stock | Si | SMD/SMT | SC-89-6 | N-Channel, P-Channel | 2 Channel | 20 V | 350 mA, 500 mA | 396 mOhms, 756 mOhms | 8 V | 400 mV | 1.3 nC, 1.65 nC | - 55 C | + 150 C | 220 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SI3453DV-T1-GE3 TTI: SI3453DV-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -30V Vds 20V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 3.4 A | 276 mOhms | 20 V | 2.5 V | 6.8 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 10.3 A | 26 mOhms | 20 V | 1.2 V | 12 nC | - 55 C | + 150 C | 5.6 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 350 V | 5 mA | 8 Ohms | 20 V | 3.6 V | - 40 C | + 110 C | 2.5 W | Depletion | Clare | Reel | ||||||
0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 600 V | 99 A | 23 mOhms | 30 V | 3 V | 228 nC | - 55 C | + 150 C | 524 W | Enhancement | Tube | ||||||
Mfr: SISS05DN-T1-GE3 TTI: SISS05DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -30V PPAK1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 108 A | 5.8 mOhms | - 20 V, 16 V | 2.2 V | 76 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 120 A | 12 mOhms | 20 V | 2.5 V | 122 nC | - 55 C | + 150 C | 480 W | Enhancement | HiPerFET | Tube |