MOSFETs
15.910 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIDR5802EP-T1-RE3 TTI: SIDR5802EP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 80V PPAKSO08DC | 0In Stock | Si | SMD/SMT | PowerPAK SO-8DC | N-Channel | 1 Channel | 80 V | 153 A | 2.9 mOhms | - 20 V, 20 V | 4 V | 28 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 7.9 A | 280 mOhms | - 20 V, 20 V | 2 V | 68 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | ||||||
Mfr: SI2367DS-T1-GE3 TTI: SI2367DS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 3.8 A | 66 mOhms | - 8 V, 8 V | 1 V | 9 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2367DS-T1-BE3 SI2367DS-GE3 | |||
Mfr: IRFR310TRPBF TTI: IRFR310TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 400V 1.7 Amp | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 400 V | 1.7 A | 3.6 Ohms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR310TRPBF-BE3 | ||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 6.1 A | 500 mOhms | - 20 V, 20 V | 4 V | 44 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | - 20 V, 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | ||||||
Mfr: SISS27DN-T1-GE3 TTI: SISS27DN-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 50 A | 5.6 mOhms | - 20 V, 20 V | 1 V | 92 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 100 V | 50 A | 55 mOhms | - 20 V, 20 V | 5 V | 140 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.8 A | 280 mOhms | - 20 V, 20 V | 4 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR9024TRPBF-BE3 | |||||
Mfr: IRFB9N60APBF TTI: IRFB9N60APBF Vishay Semiconductors Availability: 0In Stock800 On Order Expected 23-Sep-26 MOSFETs N-CH SINGLE 600V TO220 | 0In Stock800 On Order Expected 23-Sep-26 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | - 30 V, 30 V | 4 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | IRFB9N60APBF-BE3 | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 180 A | 6.4 mOhms | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||||||
0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 9 A | 28 mOhms | - 12 V, 12 V | 1.2 V | 30 nC | - 50 C | + 150 C | 15.6 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 3.1 A | 102 mOhms | - 20 V, 20 V | 3 V | 2.9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2392ADS-T1-BE3 | ||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 250 V | 400 mA | 2.5 Ohms | - 15 V, 15 V | 3.1 V | - 55 C | + 110 C | 1.8 W | Depletion | Reel | |||||||
Mfr: SUM80090E-GE3 TTI: SUM80090E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 150V Vds 20V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 150 V | 128 A | 7.5 mOhms | - 20 V, 20 V | 2 V | 95 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFR210TRLPBF TTI: IRFR210TRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 200V 2.6 Amp | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 2.6 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR210TRLPBF-BE3 | ||||
Mfr: SI4634DY-T1-GE3 TTI: SI4634DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 24.5 A | 5.2 mOhms | - 20 V, 20 V | 1.4 V | 68 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4634DY-GE3 | |||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 180 A | 8 mOhms | - 20 V, 20 V | 2 V | 390 nC | - 55 C | + 150 C | 560 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 5.4 A | 550 mOhms | - 20 V, 20 V | 2 V | 66 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | ||||||
Mfr: IRFIBC20GPBF TTI: IRFIBC20GPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 600V TO220 | 0In Stock | Si | Tube | |||||||||||||||||||
Mfr: SIHFR420A-GE3 TTI: SIHFR420A-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 500V Vds 30V Vgs DPAK (TO-252) | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 3.3 A | 3 Ohms | - 30 V, 30 V | 2 V | 17 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 8.3 A | 29.2 mOhms | - 20 V, 20 V | 2.5 V | 19.2 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SI2328DS-T1-GE3 TTI: SI2328DS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 1.15 A | 250 mOhms | - 20 V, 20 V | 4 V | 3.3 nC | - 55 C | + 150 C | 730 mW | Enhancement | TrenchFET | Reel | SI2328DS-T1-BE3 SI2328DS-GE3 | |||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 4.5 kV | 200 mA | 625 Ohms | - 20 V, 20 V | 4 V | 10.6 nC | - 55 C | + 150 C | 113 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 80 A | 38 mOhms | - 30 V, 30 V | 2.7 V | 137 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube |
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