MOSFETs
15.954 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Reel | ||||||||||||||||||||
Mfr: SIHF6N65E-GE3 TTI: SIHF6N65E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 650V Vds 30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 7 A | 600 mOhms | 30 V | 4 V | 24 nC | - 55 C | + 150 C | 31 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 30 V | 12 A | 18 mOhms | 20 V | 1.2 V | 17 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SI7309DN-T1-GE3 TTI: SI7309DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -60V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 60 V | 8 A | 146 mOhms | 20 V | 3 V | 14.5 nC | - 55 C | + 150 C | 19.8 W | Enhancement | TrenchFET | Reel | SI7309DN-GE3 | |||
Mfr: SIR626ADP-T1-RE3 TTI: SIR626ADP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-Channel 60-V | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 60 V | 165 A | 1.75 mOhms | 20 V | 3.5 V | 55 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 24.7 A | 25.5 mOhms | 20 V | 2.5 V | 19.2 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET | Reel | |||||
Mfr: IRFR210TRPBF TTI: IRFR210TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds, 20V Vgs DPAK (TO-252) | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 2.6 A | 1.5 Ohms | 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR210TRPBF-BE3 | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 4.3 mOhms | - 16 V, 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 38 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
Mfr: SI7121ADN-T1-GE3 TTI: SI7121ADN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 25V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 18 A | 15 mOhms | 25 V | 2.5 V | 33 nC | - 50 C | + 150 C | 27.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7956DP-T1-GE3 TTI: SI7956DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 150 V | 4.1 A | 105 mOhms | 20 V | 4 V | 17 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI7956DP-GE3 | |||
Mfr: SI7850DP-T1-GE3 TTI: SI7850DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 6.2 A | 22 Ohms | 20 V | 3 V | 18 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI7850DP-GE3 | |||
Mfr: IRFR220PBF TTI: IRFR220PBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 200V TO252 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 4.8 A | 800 mOhms | 20 V | 2 V | 14 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: IRFR420APBF TTI: IRFR420APBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 500V 3.3 Amp | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 3.3 A | 3 Ohms | 30 V | 2 V | 17 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 800 mA | 20 Ohms | 20 V | - 55 C | + 150 C | 42 W | Enhancement | Tube | ||||||||
Mfr: SIA456DJ-T1-GE3 TTI: SIA456DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 16V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 200 V | 2.6 A | 1.38 Ohms | 16 V | 600 mV | 5 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA456DJ-GE3 | |||
Mfr: SI2319DDS-T1-BE3 TTI: SI2319DDS-T1-BE3 Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -40V TO236 | 0In Stock | Reel | ||||||||||||||||||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 1.9 mOhms | 20 V | 2.3 V | 265 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7141DP-GE3 | ||||
Mfr: SI2377EDS-T1-GE3 TTI: SI2377EDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 4.4 A | 61 mOhms | 8 V | 1 V | 7.6 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2377EDS-T1-BE3 SI2377EDS-GE3 | |||
Mfr: SIS407DN-T1-GE3 TTI: SIS407DN-T1-GE3 Vishay Semiconductors MOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 25 A | 9.5 mOhms | 8 V | 400 mV | 38 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS407DN-GE3 | |||
Mfr: SI7252DP-T1-GE3 TTI: SI7252DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 100 V | 36.7 A | 14 mOhms | 20 V | 1.5 V | 27 nC | - 55 C | + 150 C | 46 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI3438DV-T1-GE3 TTI: SI3438DV-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 40 V | 7.4 A | 35.5 mOhms | 20 V | 1.4 V | 20 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI3438DV-GE3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | 20 V | 2.5 V | 335 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 40 A | 170 mOhms | 20 V | 4.5 V | 320 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | |||||
0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 8 A | 26 mOhms | 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 3.6 W | Enhancement | TrenchFET | Reel | SI3424CDV-T1-BE3 | ||||
0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 36 mOhms | 20 V | 3 V | 50 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel |
