MOSFETs
15.954 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 60 V | 11 A | 280 mOhms | 20 V | 4 V | 19 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | ||||||
Mfr: IRF630SPBF TTI: IRF630SPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 200V TO263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 9 A | 400 mOhms | 20 V | 2 V | 43 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | |||||
Mfr: IRFR220TRRPBF TTI: IRFR220TRRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 200V TO252 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 4.8 A | 800 mOhms | 20 V | 2 V | 14 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: IRF634STRLPBF TTI: IRF634STRLPBF Vishay / BC Components Availability: 0In StockMOSFETs N-CH SINGLE 250V TO263 | 0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 15 A | 760 mOhms | 30 V | 6.5 V | 97 nC | - 55 C | + 150 C | 543 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 1.4 A | 10.5 Ohms | 20 V | 4.5 V | 24.8 nC | - 55 C | + 150 C | 86 W | Enhancement | Polar | Tube | |||||
Mfr: SI4136DY-T1-GE3 TTI: SI4136DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 20 V | 46 A | 2 mOhms | 20 V | 1 V | 110 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4136DY-GE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 100 A | 7 mOhms | 20 V | 2 V | 25.5 nC | - 55 C | + 175 C | 150 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIR416DP-T1-GE3 TTI: SIR416DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 50 A | 3.8 mOhms | 20 V | 1.2 V | 90 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR416DP-GE3 | |||
0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 250 V | 90 A | 33 mOhms | 20 V | 4.5 V | 640 nC | - 55 C | + 150 C | 960 W | Enhancement | Linear L2 | Tube | |||||
Mfr: SI4485DY-T1-GE3 TTI: SI4485DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 6.0A 5.0W 42mohm @ 10V | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 6 A | 72 mOhms | 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4485DY-GE3 | |||
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 600 V | 82 A | 75 mOhms | 30 V | 5 V | 240 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 250 V | 100 A | 27 mOhms | 20 V | 5 V | 185 nC | - 55 C | + 150 C | 600 W | Enhancement | PolarHT | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | 20 V | 5 V | 39 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IRF710SPBF TTI: IRF710SPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 400V TO263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 400 V | 2 A | 3.6 Ohms | 20 V | 2 V | 17 nC | - 55 C | + 150 C | 36 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 26 A | 230 mOhms | 30 V | 3 V | 65 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 100 mA | 80 Ohms | 20 V | - 55 C | + 150 C | 25 W | Enhancement | Tube | ||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 1.2 A | 13 Ohms | 20 V | 2.5 V | 15.5 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | ||||||
Mfr: IRFBC30ASTRLPBF TTI: IRFBC30ASTRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 600V TO263 | 0In Stock | Si | Reel | |||||||||||||||||||
Mfr: SI7658ADP-T1-GE3 TTI: SI7658ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 2.2 mOhms | 20 V | 1.2 V | 110 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7658ADP-GE3 | |||
Mfr: IXFH80N25X3 TTI: IXFH80N25X3 IXYS Availability: 0In StockMOSFETs 250V/80A Ultra Junct ion X3-Class MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 80 A | 16 mOhms | 20 V | 2.5 V | 83 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SIDR870ADP-T1-GE3 TTI: SIDR870ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8DC | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 95 A | 10.5 mOhms | 20 V | 3 V | 25.5 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IXFX300N20X3 TTI: IXFX300N20X3 IXYS Availability: 0In StockMOSFETs N-Ch 200V Enh FET 200Vdgr 300A 4mOhm | 0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 200 V | 300 A | 4 mOhms | 20 V | 2.5 V | 375 nC | - 55 C | + 150 C | 1.25 mW | Enhancement | HiPerFET | Tube | ||||
Mfr: SIRA01DP-T1-GE3 TTI: SIRA01DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -30V Vds 16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 60 A | 4.9 mOhms | - 16 V, 20 V | 2.2 V | 56 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHA240N60E-GE3 TTI: SIHA240N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds; +/-30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 240 mOhms | 30 V | 3 V | 23 nC | - 55 C | + 150 C | 31 W | Enhancement | Tube |