MOSFETs
15.954 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 5 A | 826 mOhms | 30 V | 4 V | 15 nC | - 55 C | + 150 C | 30 W | Enhancement | Bulk | ||||||
Mfr: SIA108DJ-T1-GE3 TTI: SIA108DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs Nch 80V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 80 V | 12 A | 38 mOhms | 20 V | 2 V | 13 nC | - 55 C | + 150 C | 19 W | Enhancement | Reel | |||||
Mfr: SISH617DN-T1-GE3 TTI: SISH617DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 25V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 12.3 mOhms | 25 V | 2.5 V | 59 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS76LDN-T1-GE3 TTI: SISS76LDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 70V PPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 70 V | 67.4 A | 5.2 mOhms | 12 V | 1.6 V | 22.3 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Reel | ||||||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 850 V | 8 A | 850 mOhms | 30 V | 3 V | 17 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SUM10250E-GE3 TTI: SUM10250E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 250V Vds 20V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 250 V | 63.5 A | 24.7 mOhms | 20 V | 2 V | 88 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 10 A | 1.5 Ohms | 20 V | 4.5 V | 200 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | ||||||
Mfr: SIS822DNT-T1-GE3 TTI: SIS822DNT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | TrenchFET, PowerPAK | Reel | ||||||||||||||||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 650 V | 8 A | 500 mOhms | 30 V | 3 V | 12 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | 20 V | 2 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 56 A | 27 mOhms | 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIHB17N80E-GE3 TTI: SIHB17N80E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 800V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 15 A | 290 mOhms | 30 V | 2 V | 122 nC | - 55 C | + 150 C | 208 W | Enhancement | Tube | |||||
Mfr: SI5448DU-T1-GE3 TTI: SI5448DU-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 40 V | 25 A | 6.46 mOhms | - 16 V, 20 V | 1 V | 40 nC | - 55 C | + 150 C | 31 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 12 A | 300 mOhms | 30 V | 2.5 V | 17.7 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 150 A | 12.4 mOhms | 20 V | 4 V | 110 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 4 A | 3.3 Ohms | 20 V | 6 V | 26 nC | - 55 C | + 150 C | 150 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SI8916EDB-T6-E1 TTI: SI8916EDB-T6-E1 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH DUAL 20V MICROFOOT | 0In Stock | Si | SMD/SMT | MicroFOOT-4 | N-Channel | 2 Channel | 20 V | 2.5 A | 75 mOhms | 12 V | 1.4 V | 5.6 nC | - 55 C | + 150 C | 770 mW | Enhancement | Reel | |||||
Mfr: SISS5108DN-T1-GE3 TTI: SISS5108DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 100V PPAK1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-8 | N-Channel | 1 Channel | 100 V | 55.9 A | 10.5 mOhms | 20 V | 4 V | 14.8 nC | - 55 C | + 150 C | 65.7 W | Enhancement | Reel | |||||
Mfr: SI4151DY-T1-GE3 TTI: SI4151DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs P-CH SINGLE -30V SOIC8 | 0In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 30 V | 20.5 A | 7.5 mOhms | 25 V | 2.5 V | 28 nC | - 55 C | + 150 C | 5.6 W | Enhancement | Reel | |||||
Mfr: IXFX80N60P3 TTI: IXFX80N60P3 IXYS Availability: 0In StockMOSFETs 600V 80A 0.07Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 80 A | 70 mOhms | 30 V | 5 V | 190 nC | - 55 C | + 150 C | 1.3 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 12 A | 70 mOhms | 8 V | 850 mV | 60 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA431DJ-GE3 | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 40 V | 100 A | 7 mOhms | 20 V | 2 V | 25.5 nC | - 55 C | + 175 C | 150 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 200 V | 90 A | 44 mOhms | 20 V | 4.5 V | 205 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | ||||||
Mfr: SI1467DH-T1-E3 TTI: SI1467DH-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 150 mOhms | 8 V | 1 V | 13.5 nC | - 55 C | + 150 C | 2.78 W | Enhancement | TrenchFET | Reel | SI1467DH-T1-BE3 SI1467DH-E3 |