MOSFETs
15.924 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIR422DP-T1-GE3 TTI: SIR422DP-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 6.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 20.5 A | 6.6 mOhms | - 20 V, 20 V | 1.2 V | 48 nC | - 55 C | + 150 C | 34.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR422DP-GE3 | |||
Mfr: SI4178DY-T1-GE3 TTI: SI4178DY-T1-GE3 Vishay Semiconductors Availability: 40.000In StockMOSFETs 30V Vds 25V Vgs SO-8 | 40.000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 12 A | 21 mOhms | - 20 V, 20 V | 1.4 V | 7.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4178DY-GE3 | |||
Mfr: SI9933CDY-T1-GE3 TTI: SI9933CDY-T1-GE3 Vishay Semiconductors Availability: 17.500In StockMOSFETs -20V Vds 12V Vgs SO-8 | 17.500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 20 V | 4 A | 58 mOhms | - 12 V, 12 V | 600 mV | 17 nC | - 50 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI9933CDY-GE3 | |||
Mfr: SI1013CX-T1-GE3 TTI: SI1013CX-T1-GE3 Vishay Semiconductors Availability: 174.000In Stock147.000 On Order Expected MOSFETs -20V Vds 8V Vgs SC89-3 | 174.000In Stock147.000 On Order Expected | Si | SMD/SMT | P-Channel | 1 Channel | 20 V | 450 mA | 760 mOhms | - 8 V, 8 V | 1 V | 1.65 nC | - 55 C | + 150 C | 190 mW | Enhancement | TrenchFET | Reel | |||||
Mfr: SI2325DS-T1-E3 TTI: SI2325DS-T1-E3 Vishay Semiconductors Availability: 6.000In StockMOSFETs -150V Vds 20V Vgs SOT-23 | 6.000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 150 V | 690 mA | 1.2 Ohms | - 20 V, 20 V | 2.5 V | 12 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI2325DS-T1-BE3 SI2325DS-E3 | |||
2.050In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 14 A | 160 mOhms | - 20 V, 20 V | 4 V | 26 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF530PBF-BE3 IRF520SPBF | |||||
Mfr: SI3457CDV-T1-GE3 TTI: SI3457CDV-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -30V Vds 20V Vgs TSOP-6 | 3.000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 5.1 A | 74 mOhms | - 20 V, 20 V | 3 V | 15 nC | - 55 C | + 150 C | 3 W | Enhancement | TrenchFET | Reel | SI3457CDV-T1-BE3 SI3457BDV-T1-E3-S | |||
Mfr: SI1967DH-T1-GE3 TTI: SI1967DH-T1-GE3 Vishay Semiconductors Availability: 18.000In StockMOSFETs -20V Vds 8V Vgs SC70-6 | 18.000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 20 V | 1.3 A | 490 mOhms | - 8 V, 8 V | 2.5 V | 4 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1967DH-T1-BE3 SI1903DL-T1-GE3 | |||
Mfr: SI1401EDH-T1-GE3 TTI: SI1401EDH-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -12V Vds 10V Vgs SC70-6 | 3.000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 12 V | 4 A | 34 mOhms | - 10 V, 10 V | 1 V | 36 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI1401EDH-T1-BE3 SI1401EDH-GE3 | |||
Mfr: SISB46DN-T1-GE3 TTI: SISB46DN-T1-GE3 Vishay Semiconductors Availability: 15.000In StockMOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 15.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 40 V | 34 A | 11.71 mOhms | - 16 V, 20 V | 1.1 V | 22 nC | - 55 C | + 150 C | 23 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI4435FDY-T1-GE3 TTI: SI4435FDY-T1-GE3 Vishay / Siliconix Availability: 27.500In Stock15.000 On Order Expected 25-Aug-26 MOSFETs -30V Vds 20V Vgs SO-8 | 27.500In Stock15.000 On Order Expected 25-Aug-26 | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 12.6 A | 30 mOhms | - 20 V, 20 V | 2.2 V | 13.5 nC | - 55 C | + 150 C | 4.8 W | Enhancement | Reel | |||||
Mfr: SIR184DP-T1-RE3 TTI: SIR184DP-T1-RE3 Vishay / Siliconix Availability: 3.000In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 73 A | 4.7 mOhms | - 20 V, 20 V | 2 V | 21 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISA12ADN-T1-GE3 TTI: SISA12ADN-T1-GE3 Vishay Semiconductors Availability: 69.000In Stock48.000 On Order Expected MOSFETs For New Design See: 78-SISHA12ADN-T1-GE3 | 69.000In Stock48.000 On Order Expected | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 25 A | 3.2 mOhms | - 16 V, 20 V | 1.1 V | 45 nC | - 55 C | + 150 C | 28 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRF840APBF TTI: IRF840APBF Vishay Semiconductors Availability: 39.750In StockMOSFETs N-CH SINGLE 500V TO220 | 39.750In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 4 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840APBF-BE3 | ||||
Mfr: SIR876ADP-T1-GE3 TTI: SIR876ADP-T1-GE3 Vishay Semiconductors Availability: 18.000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 18.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 40 A | 9 mOhms | - 20 V, 20 V | 1.5 V | 49 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR876ADP-GE3 | |||
Mfr: SI7615ADN-T1-GE3 TTI: SI7615ADN-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -20V Vds 12V Vgs PowerPAK 1212-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 4.4 mOhms | - 12 V, 12 V | 1.5 V | 122 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7621DN-T1-GE3 | |||
Mfr: SUD40N08-16-E3 TTI: SUD40N08-16-E3 Vishay / Siliconix Availability: 6.000In StockMOSFETs 80V 40A 100W | 6.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 80 V | 40 A | 16 mOhms | - 20 V, 20 V | 2 V | 42 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4425FDY-T1-GE3 TTI: SI4425FDY-T1-GE3 Vishay / Siliconix Availability: 2.500In Stock5.000 On Order Expected 21-Aug-26 MOSFETs P-CH SINGLE -30V SO-8 | 2.500In Stock5.000 On Order Expected 21-Aug-26 | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 18.3 A | 9.5 mOhms | - 20 V, 16 V | 2.2 V | 27 nC | - 55 C | + 150 C | 4.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7949DP-T1-E3 TTI: SI7949DP-T1-E3 Vishay Semiconductors Availability: 3.000In Stock3.000 On Order Expected 21-Aug-26 MOSFETs -60V Vds 20V Vgs PowerPAK SO-8 | 3.000In Stock3.000 On Order Expected 21-Aug-26 | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 2 Channel | 60 V | 5 A | 64 mOhms | - 20 V, 20 V | 3 V | 26 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI7949DP-E3 | |||
Mfr: SI4174DY-T1-GE3 TTI: SI4174DY-T1-GE3 Vishay Semiconductors Availability: 5.000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 5.000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 17 A | 9.5 mOhms | - 20 V, 20 V | 1 V | 27 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4174DY-GE3 | |||
Mfr: IRFL210TRPBF TTI: IRFL210TRPBF Vishay Semiconductors Availability: 37.500In StockMOSFETs N-Chan 200V 0.96 Amp | 37.500In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 200 V | 960 mA | 1.5 Ohms | - 20 V, 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL210TRPBF-BE3 | ||||
Mfr: SUD19P06-60-GE3 TTI: SUD19P06-60-GE3 Vishay Semiconductors Availability: 12.000In StockMOSFETs 60V 19A 38.5W 60mohm @ 10V | 12.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 19 A | 60 mOhms | - 20 V, 20 V | 3 V | 40 nC | - 55 C | + 150 C | 113 W | Enhancement | TrenchFET | Reel | SUD19P06-60-BE3 | |||
Mfr: SI1902CDL-T1-GE3 TTI: SI1902CDL-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 20V Vds 12V Vgs SC70-6 | 6.000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.1 A | 235 mOhms | - 12 V, 12 V | 1.5 V | 2 nC | - 55 C | + 150 C | 420 mW | Enhancement | TrenchFET | Reel | SI1902CDL-T1-BE3 SI1958DH-T1-GE3 | |||
Mfr: IRFP360PBF TTI: IRFP360PBF Vishay Semiconductors Availability: 1.500In Stock1.000 On Order Expected 23-Jun-27 MOSFETs N-CH SINGLE 400V TO247 | 1.500In Stock1.000 On Order Expected 23-Jun-27 | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 400 V | 23 A | 200 mOhms | - 20 V, 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SUD50P08-25L-E3 TTI: SUD50P08-25L-E3 Vishay Semiconductors Availability: 2.000In StockMOSFETs 80V 50A 136W 25.2mohm @ 10V | 2.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 80 V | 50 A | 25.2 mOhms | - 20 V, 20 V | 1 V | 105 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD50P08-25L-BE3 |