MOSFETs
15.954 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFR420TRPBF TTI: IRFR420TRPBF Vishay Semiconductors Availability: 12.000In StockMOSFETs N-CH SINGLE 500V DPAK TO-252 | 12.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 3.3 A | 3 Ohms | 30 V | 4 V | 17 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR420TRPBF-BE3 | ||||
Mfr: SI2302DDS-T1-GE3 TTI: SI2302DDS-T1-GE3 Vishay Semiconductors Availability: 51.000In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 51.000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302DDS-T1-BE3 | |||
Mfr: SI4948BEY-T1-GE3 TTI: SI4948BEY-T1-GE3 Vishay Semiconductors Availability: 5.000In StockMOSFETs -60V Vds 20V Vgs SO-8 | 5.000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 60 V | 3.1 A | 120 mOhms | 20 V | 3 V | 22 nC | - 55 C | + 175 C | 2.4 W | Enhancement | TrenchFET | Reel | SI4948BEY-GE3 | |||
Mfr: SIHG73N60E-GE3 TTI: SIHG73N60E-GE3 Vishay / Siliconix Availability: 1.600In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 1.600In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 73 A | 39 mOhms | 30 V | 4 V | 241 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube | |||||
Mfr: SIRA58ADP-T1-RE3 TTI: SIRA58ADP-T1-RE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 40V Vds 20/-16V Vgs PowerPAK SO-8 | 6.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 109 A | 2.65 mOhms | - 16 V, 20 V | 1.1 V | 61 nC | - 55 C | + 150 C | 56.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRFR110PBF TTI: IRFR110PBF Vishay Semiconductors Availability: 3.075In Stock3.000 On Order Expected 25-Jan-27 MOSFETs N-Chan 100V 4.3 Amp | 3.075In Stock3.000 On Order Expected 25-Jan-27 | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | IRFR110PBF-BE3 | ||||
Mfr: IRF9640PBF TTI: IRF9640PBF Vishay Semiconductors Availability: 1.700In StockMOSFETs P-CH SINGLE -200V TO220 | 1.700In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF9640PBF-BE3 | ||||
Mfr: SIR470DP-T1-GE3 TTI: SIR470DP-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 60 A | 1.9 mOhms | 20 V | 1 V | 155 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR814DP-T1-GE3 | |||
Mfr: SI7898DP-T1-E3 TTI: SI7898DP-T1-E3 Vishay Semiconductors Availability: 3.000In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 3 A | 85 mOhms | 20 V | 2 V | 17 nC | - 55 C | + 150 C | 1.9 W | Enhancement | TrenchFET | Reel | SI7898DP-T1 | |||
Mfr: IRF9640STRLPBF TTI: IRF9640STRLPBF Vishay Semiconductors Availability: 800In Stock2.400 On Order Expected 02-Oct-26 MOSFETs P-CH SINGLE -200V TO263 | 800In Stock2.400 On Order Expected 02-Oct-26 | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: SISS23DN-T1-GE3 TTI: SISS23DN-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8S | 3.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 50 A | 3.5 mOhms | 8 V | 900 mV | 300 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUD09P10-195-GE3 TTI: SUD09P10-195-GE3 Vishay Semiconductors Availability: 6.000In Stock22.000 On Order Expected MOSFETs -100V 195mOhms@ 10V -8.8A | 6.000In Stock22.000 On Order Expected | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 8.8 A | 195 mOhms | 20 V | 2.5 V | 23.2 nC | - 55 C | + 150 C | 113.6 W | Enhancement | TrenchFET | Reel | SUD09P10-195-BE3 | |||
Mfr: SI4160DY-T1-GE3 TTI: SI4160DY-T1-GE3 Vishay Semiconductors Availability: 2.500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 2.500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 25.4 A | 4.9 mOhms | 20 V | 1 V | 54 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4160DY-GE3 | |||
Mfr: IRFI540GPBF TTI: IRFI540GPBF Vishay Semiconductors Availability: 1.100In StockMOSFETs N-CH SINGLE 100V TO220 | 1.100In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 17 A | 77 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 175 C | 48 W | Enhancement | Tube | |||||
Mfr: IRFU9120PBF TTI: IRFU9120PBF Vishay Semiconductors Availability: 1.500In StockMOSFETs P-Chan 100V 5.6 Amp | 1.500In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: SIJH600E-T1-GE3 TTI: SIJH600E-T1-GE3 Vishay Semiconductors Availability: 22.000In Stock26.000 On Order Expected 15-Jan-27 MOSFETs N-CH SINGLE 60V PPAK 8X8L | 22.000In Stock26.000 On Order Expected 15-Jan-27 | Si | SMD/SMT | PowerPak-8 | 60 V | 20 V | 4 V | 141 nC | - 55 C | + 175 C | 333 W | Enhancement | Reel | |||||||||
Mfr: SI4488DY-T1-GE3 TTI: SI4488DY-T1-GE3 Vishay Semiconductors Availability: 2.500In Stock5.000 On Order Expected 26-Jun-29 MOSFETs 150V Vds 20V Vgs SO-8 | 2.500In Stock5.000 On Order Expected 26-Jun-29 | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 5 A | 50 mOhms | 20 V | 2 V | 36 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4488DY-GE3 | |||
Mfr: SI4403CDY-T1-GE3 TTI: SI4403CDY-T1-GE3 Vishay Semiconductors Availability: 22.500In StockMOSFETs 1.8V P-Channel | 22.500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 20 V | 13.4 A | 15.5 mOhms | 8 V | 400 mV | 60 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFP150PBF TTI: IRFP150PBF Vishay Semiconductors Availability: 175In StockMOSFETs N-CH SINGLE 100V TO247 | 175In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 41 A | 55 mOhms | 20 V | 2 V | 140 nC | - 55 C | + 175 C | 230 W | Enhancement | Tube | |||||
Mfr: SI1401EDH-T1-GE3 TTI: SI1401EDH-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -12V Vds 10V Vgs SC70-6 | 3.000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 12 V | 4 A | 34 mOhms | 10 V | 1 V | 36 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI1401EDH-T1-BE3 SI1401EDH-GE3 | |||
Mfr: SIHG47N60E-GE3 TTI: SIHG47N60E-GE3 Vishay / Siliconix Availability: 1.500In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 1.500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 64 mOhms | 30 V | 4 V | 148 nC | - 55 C | + 150 C | 357 W | Enhancement | Tube | |||||
Mfr: SUD08P06-155L-GE3 TTI: SUD08P06-155L-GE3 Vishay Semiconductors Availability: 2.000In StockMOSFETs -30V 0.155ohm@-10V -8.4A P-CH | 2.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.2 A | 280 mOhms | 20 V | 2 V | 19 nC | - 55 C | + 150 C | 20.8 W | Enhancement | TrenchFET | Reel | SUD08P06-155L-BE3 | |||
Mfr: IRFBC30ASPBF TTI: IRFBC30ASPBF Vishay Semiconductors Availability: 500In StockMOSFETs N-Chan 600V 3.6 Amp | 500In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 3.6 A | 2.2 Ohms | 30 V | 2 V | 23 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | |||||
Mfr: SIR462DP-T1-GE3 TTI: SIR462DP-T1-GE3 Vishay Semiconductors Availability: 18.000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 18.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 30 A | 7.9 mOhms | 20 V | 1 V | 20 nC | - 55 C | + 150 C | 41.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR462DP-GE3 | |||
Mfr: SISB46DN-T1-GE3 TTI: SISB46DN-T1-GE3 Vishay Semiconductors Availability: 27.000In StockMOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 27.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 40 V | 34 A | 11.71 mOhms | - 16 V, 20 V | 1.1 V | 22 nC | - 55 C | + 150 C | 23 W | Enhancement | TrenchFET, PowerPAK | Reel |