MOSFETs
16.468 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRF740STRLPBF TTI: IRF740STRLPBF Vishay Semiconductors Availability: 22.400In Stock11.200 On Order Expected 17-Feb-27 MOSFETs N-CH SINGLE 400V TO263 | 22.400In Stock11.200 On Order Expected 17-Feb-27 | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | 20 V | 2 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: IRF9530PBF TTI: IRF9530PBF Vishay Semiconductors Availability: 1.000In StockMOSFETs P-CH SINGLE -100V TO220 | 1.000In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 12 A | 300 mOhms | 20 V | 4 V | 38 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF9530PBF-BE3 | ||||
Mfr: SUD23N06-31-GE3 TTI: SUD23N06-31-GE3 Vishay Semiconductors Availability: 6.000In Stock6.000 On Order Expected 16-Nov-26 MOSFETs N-Ch MOSFET 60V 31 mohm @ 10V | 6.000In Stock6.000 On Order Expected 16-Nov-26 | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 21.4 A | 31 mOhms | 20 V | 1 V | 11 nC | - 55 C | + 150 C | 31.25 W | Enhancement | TrenchFET | Reel | SUD23N06-31-BE3 | |||
Mfr: SIS412DN-T1-GE3 TTI: SIS412DN-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 6.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 12 A | 24 mOhms | 10 V | 1 V | 8 nC | - 55 C | + 150 C | 10 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS412DN-GE3 | |||
Mfr: IRFI540GPBF TTI: IRFI540GPBF Vishay Semiconductors Availability: 150In Stock1.900 On Order Expected 17-Nov-26 MOSFETs N-CH SINGLE 100V TO220 | 150In Stock1.900 On Order Expected 17-Nov-26 | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 17 A | 77 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 175 C | 48 W | Enhancement | Tube | |||||
Mfr: SIR870ADP-T1-GE3 TTI: SIR870ADP-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 5.5 mOhms | 20 V | 1.5 V | 80 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR870ADP-GE3 | |||
Mfr: IRFP450PBF TTI: IRFP450PBF Vishay Semiconductors Availability: 775In StockMOSFETs N-CH SINGLE 500V TO247 | 775In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | 20 V | 2 V | 150 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SI1013CX-T1-GE3 TTI: SI1013CX-T1-GE3 Vishay Semiconductors Availability: 0In Stock240.000 On Order Expected MOSFETs -20V Vds 8V Vgs SC89-3 | 0In Stock240.000 On Order Expected | Si | SMD/SMT | P-Channel | 1 Channel | 20 V | 450 mA | 760 mOhms | 8 V | 1 V | 1.65 nC | - 55 C | + 150 C | 190 mW | Enhancement | TrenchFET | Reel | |||||
Mfr: IRFU9310PBF TTI: IRFU9310PBF Vishay Semiconductors Availability: 1.950In StockMOSFETs P-Chan 400V 1.8 Amp | 1.950In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 400 V | 1.8 A | 7 Ohms | 20 V | 4 V | 13 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | |||||
Mfr: IRF640STRRPBF TTI: IRF640STRRPBF Vishay Semiconductors Availability: 800In StockMOSFETs N-Chan 200V 18 Amp | 800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 18 A | 180 mOhms | 20 V | 2 V | 70 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: SI3456DDV-T1-GE3 TTI: SI3456DDV-T1-GE3 Vishay Semiconductors Availability: 36.000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 36.000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 6.3 A | 40 mOhms | 20 V | 3 V | 2.8 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3456DDV-T1-BE3 SI3456DDV-GE3 | |||
Mfr: SI7848BDP-T1-E3 TTI: SI7848BDP-T1-E3 Vishay Semiconductors Availability: 9.000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 9.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 47 A | 9 mOhms | 20 V | 3 V | 33 nC | - 55 C | + 150 C | 36 W | Enhancement | TrenchFET | Reel | SI7848BDP-E3 | |||
Mfr: SI4431CDY-T1-GE3 TTI: SI4431CDY-T1-GE3 Vishay Semiconductors Availability: 37.500In StockMOSFETs -30V Vds 20V Vgs SO-8 | 37.500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 9 A | 32 mOhms | 20 V | 1 V | 38 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | SI4431CDY-GE3 | |||
Mfr: SI9407BDY-T1-E3 TTI: SI9407BDY-T1-E3 Vishay Semiconductors Availability: 2.500In StockMOSFETs -60V Vds 20V Vgs SO-8 | 2.500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.7 A | 100 mOhms | 20 V | 1 V | 14.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI9407BDY-E3 | |||
Mfr: SI1416EDH-T1-GE3 TTI: SI1416EDH-T1-GE3 Vishay Semiconductors Availability: 51.000In StockMOSFETs 30V Vds 12V Vgs SC70-6 | 51.000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 30 V | 3.9 A | 58 mOhms | 12 V | 1.4 V | 12 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1416EDH-T1-BE3 SI1410EDH-T1-E3-S SI1410EDH-T1-GE3 SI1426DH-T1-E3-S | |||
Mfr: IRFR9014PBF TTI: IRFR9014PBF Vishay Semiconductors Availability: 1.425In StockMOSFETs P-CH SINGLE -60V TO252 | 1.425In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 5.1 A | 500 mOhms | 20 V | 2 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: IRFR220TRPBF TTI: IRFR220TRPBF Vishay Semiconductors Availability: 2.000In StockMOSFETs N-Chan 200V 4.8 Amp | 2.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 4.8 A | 800 mOhms | 20 V | 2 V | 14 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: IRFR9214TRLPBF TTI: IRFR9214TRLPBF Vishay Semiconductors Availability: 6.000In StockMOSFETs P-CH SINGLE -250V TO252 | 6.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 250 V | 2.7 A | 3 Ohms | 20 V | 4 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | |||||
Mfr: SIR680LDP-T1-RE3 TTI: SIR680LDP-T1-RE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs N-Ch 80-V (D-S) | 3.000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 80 V | 130 A | 2.8 mOhms | 20 V | 2.5 V | 135 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4162DY-T1-GE3 TTI: SI4162DY-T1-GE3 Vishay Semiconductors Availability: 2.500In Stock2.500 On Order Expected 24-Mar-27 MOSFETs 30V Vds 20V Vgs SO-8 | 2.500In Stock2.500 On Order Expected 24-Mar-27 | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 19.3 A | 7.9 mOhms | 20 V | 3 V | 20 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4162DY-GE3 | |||
Mfr: IRFP150PBF TTI: IRFP150PBF Vishay Semiconductors Availability: 175In StockMOSFETs N-CH SINGLE 100V TO247 | 175In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 41 A | 55 mOhms | 20 V | 2 V | 140 nC | - 55 C | + 175 C | 230 W | Enhancement | Tube | |||||
Mfr: IRF840SPBF TTI: IRF840SPBF Vishay Semiconductors Availability: 50In StockMOSFETs N-CH SINGLE 500V TO263 | 50In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 20 V | 2 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SI4403CDY-T1-GE3 TTI: SI4403CDY-T1-GE3 Vishay Semiconductors Availability: 22.500In StockMOSFETs 1.8V P-Channel | 22.500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 20 V | 13.4 A | 15.5 mOhms | 8 V | 400 mV | 60 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR462DP-T1-GE3 TTI: SIR462DP-T1-GE3 Vishay Semiconductors Availability: 18.000In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 18.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 30 A | 7.9 mOhms | 20 V | 1 V | 20 nC | - 55 C | + 150 C | 41.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR462DP-GE3 | |||
Mfr: SI1401EDH-T1-GE3 TTI: SI1401EDH-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -12V Vds 10V Vgs SC70-6 | 3.000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 12 V | 4 A | 34 mOhms | 10 V | 1 V | 36 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI1401EDH-T1-BE3 SI1401EDH-GE3 |