MOSFETs
15.954 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHP6N80AE-GE3 TTI: SIHP6N80AE-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 800V TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 5 A | 950 mOhms | 30 V | 4 V | 22.5 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Reel | |||||
Mfr: SIR588DP-T1-RE3 TTI: SIR588DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 80V PPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 80 V | 59.5 A | 7.2 mOhms | 20 V | 4 V | 18.7 nC | - 55 C | + 150 C | 59.5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 12 A | 500 mOhms | 30 V | 5.5 V | 29 nC | - 55 C | + 150 C | 200 W | Enhancement | Polar | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 50 A | 60 mOhms | 20 V | 2.5 V | 70 nC | - 55 C | + 175 C | 360 W | Enhancement | Tube | ||||||
Mfr: IRF830ASTRLPBF TTI: IRF830ASTRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 500V TO263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 5 A | 1.4 Ohms | 30 V | 2 V | 24 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 76 A | 42 mOhms | 20 V | 5 V | 92 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 1.4 A | 11 Ohms | 20 V | 4.5 V | 17.8 nC | - 55 C | + 150 C | 63 W | Enhancement | Tube | ||||||
Mfr: SIHA5N80AE-GE3 TTI: SIHA5N80AE-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 800V TO220FP | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 3 A | 1.35 Ohms | 30 V | 4 V | 11 nC | - 55 C | + 150 C | 29 W | Enhancement | Tube | |||||
Mfr: SIZ254DT-T1-GE3 TTI: SIZ254DT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH DUAL 70V PPAIR 3X3S | 0In Stock | Si | SMD/SMT | PowerPAIR-3x3S-8 | N-Channel | 1 Channel | 70 V | 32.5 A | 16.1 mOhms | 20 V | 2.4 V | 13 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.16 A | 47 mOhms | 20 V | 3 V | 3 nC | - 55 C | + 150 C | 750 mW | Enhancement | Reel | SI2306BDS-T1-E3 | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 60 V | 1.6 A | 345 mOhms | 20 V | 3 V | 2.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | SI2309CDS-T1-GE3 | |||||
Mfr: SIR500DP-T1-RE3 TTI: SIR500DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 30V PPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 350.8 A | 470 uOhms | - 12 V, 16 V | 2.2 V | 120 nC | - 55 C | + 150 C | 104.1 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 24 A | 5.7 mOhms | 20 V | 1 V | 44 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4168DY-GE3 | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 8 A | 22 mOhms | 20 V | 1.2 V | 23 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4804CDY-GE3 | ||||
Mfr: SI7846DP-T1-GE3 TTI: SI7846DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 24.5 A | 50 mOhms | 20 V | 4.5 V | 30 nC | - 55 C | + 150 C | 1.9 W | Enhancement | TrenchFET | Reel | SI7846DP-GE3 | |||
Mfr: IRFZ14SPBF TTI: IRFZ14SPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 60V 10 Amp 200mohm @ 10V | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 10 A | 200 mOhms | 20 V | 2 V | 11 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | |||||
Mfr: SI2333CDS-T1-E3 TTI: SI2333CDS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V 5.1A 2.5W 35mohm @ 4.5V | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 12 V | 7.1 A | 35 mOhms | 8 V | 400 mV | 15 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2333CDS-T1-BE3 SI2333CDS-E3 | |||
Mfr: SI4128DY-T1-E3 TTI: SI4128DY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 10.9 A | 24 mOhms | 20 V | 1 V | 12 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4128DY-E3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | 30 V | 3 V | 36 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 41 A | 68 mOhms | 30 V | 5 V | 27 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||||
Mfr: SIHD1K4N60E-GE3 TTI: SIHD1K4N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs DPAK (TO-252) | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 4.2 A | 1.45 Ohms | 30 V | 3 V | 7.5 nC | - 55 C | + 150 C | 63 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 75 V | 80 A | 24 mOhms | 20 V | 2.5 V | 103 nC | - 55 C | + 150 C | 357 W | Enhancement | Linear L2 | Tube | |||||
Mfr: SIHA20N50E-GE3 TTI: SIHA20N50E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 500V TO220FP | 0In Stock | Si | Through Hole | N-Channel | 1 Channel | 500 V | 19 A | 184 mOhms | 30 V | 4 V | 46 nC | - 55 C | + 150 C | 34 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 20 V | 5.7 A | 37 mOhms | 8 V | 850 mV | 10.4 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 300 V | 36 A | 110 mOhms | 20 V | 2.5 V | 30 nC | - 55 C | + 150 C | 347 W | Enhancement | HiPerFET | Tube |