MOSFETs
15.910 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHP125N65E-GE3 TTI: SIHP125N65E-GE3 Vishay Availability: 0In StockMOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.12 10V | 0In Stock | Si | Through Hole | TO-220AB-3 | N-Channel | 1 Channel | 650 V | 27 A | 120 mOhms | - 30 V, 30 V | 5 V | 38 nC | - 55 C | + 150 C | 208 W | Enhancement | Tube | |||||
Mfr: SIHG041N65SF-GE3 TTI: SIHG041N65SF-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 650V TO247AC | 0In Stock | Tube | ||||||||||||||||||||
Mfr: SIHP110N65SF-GE3 TTI: SIHP110N65SF-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 700V TO-220AB | 0In Stock | Si | Through Hole | TO-220AB-3 | N-Channel | 1 Channel | 650 V | 33 A | 115 mOhms | 20 V | 5 V | 83 nC | - 55 C | + 150 C | 313 W | Enhancement | Tube | |||||
Mfr: SIJK4810-T1-GE3 TTI: SIJK4810-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 80-V (D-S) MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK-8 | N-Channel | 1 Channel | 80 V | 361 A | 1.8 mOhms | 20 V | 3.4 V | 213 nC | - 55 C | + 150 C | 446 W | Enhancement | Reel | |||||
Mfr: SISS4304DN-T1-UE3 TTI: SISS4304DN-T1-UE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 30V PPAK1212-8S | 0In Stock | Reel | ||||||||||||||||||||
Mfr: SIHG190N65E-GE3 TTI: SIHG190N65E-GE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 650V TO247AC | 0In Stock | Si | SMD/SMT | TO-247AC | N-Channel | 1 Channel | 650 V | 20 A | 190 mOhms | - 30 V, 30 V | 5 V | 33 nC | - 55 C | + 150 C | 179 W | Enhancement | Vishay | Tube | ||||
0In Stock | Si | SMD/SMT | PowerPAK 10x12 | N-Channel | 1 Channel | 40 V | 795 A | 470 uOhms | - 20 V, 20 V | 3.5 V | 312 nC | - 55 C | + 175 C | 536 W | Enhancement | Reel | ||||||
Mfr: SIRA20DDP-T1-UE3 TTI: SIRA20DDP-T1-UE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 25V PPAK SO-8 | 0In Stock | Reel | ||||||||||||||||||||
Mfr: SIDR402DP-T1-RE3 TTI: SIDR402DP-T1-RE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 40V PPAK SO-8DC | 0In Stock | Si | Reel | |||||||||||||||||||
Mfr: SISF06DN-T1-GE3 TTI: SISF06DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs Dual N-Ch 30V(S1-S2) | 0In Stock | Si | SMD/SMT | N-Channel | 2 Channel | 30 V | 101 A | 4.5 mOhms | - 16 V, 20 V | 2.3 V | 30 nC | - 55 C | + 150 C | 69.4 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 650 V | 8.4 A | 193 mOhms | - 30 V, 30 V | 5 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 2.8 mOhms | - 16 V, 20 V | 1.1 V | 51 nC | - 55 C | + 150 C | 40 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA10DP-GE3 | ||||
Mfr: SI8425DB-T1-E1 TTI: SI8425DB-T1-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 10V Vgs MICRO FOOT 1.6 x 1.6 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 20 V | 9.3 A | 40 mOhms | - 10 V, 10 V | 900 mV | 110 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR466DP-T1-GE3 TTI: SIR466DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 3.5 mOhms | - 20 V, 20 V | 1.2 V | 65 nC | - 55 C | + 150 C | 54 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR466DP-GE3 | |||
Mfr: SI4435DDY-T1-E3 TTI: SI4435DDY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | P-Channel | 1 Channel | 30 V | 11.4 A | 24 mOhms | - 20 V, 20 V | 3 V | 32 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4435DDY-E3 | ||||
Mfr: SIHFU110-GE3 TTI: SIHFU110-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 100V TO251 | 0In Stock | Si | Tube | |||||||||||||||||||
Mfr: SIHF22N60E-GE3 TTI: SIHF22N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 21 A | 180 mOhms | - 30 V, 30 V | 4 V | 57 nC | - 55 C | + 150 C | 35 W | Enhancement | Tube | |||||
Mfr: SUP50020EL-GE3 TTI: SUP50020EL-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 20V Vgs TO-220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 120 A | 2.3 mOhms | - 20 V, 20 V | 1.2 V | 126 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Tube | ||||
Mfr: SIR618DP-T1-GE3 TTI: SIR618DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 14.2 A | 76 mOhms | - 20 V, 20 V | 2 V | 21.5 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS64DN-T1-GE3 TTI: SISS64DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 1.8 mOhms | - 16 V, 20 V | 1.1 V | 68 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IRF9610STRRPBF TTI: IRF9610STRRPBF Vishay / Siliconix Availability: 0In StockMOSFETs P-CH SINGLE -200V D2PAK | 0In Stock | Si | Reel | |||||||||||||||||||
Mfr: SIR846BDP-T1-RE3 TTI: SIR846BDP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 100-V(D-S) PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 65.8 A | 8 mOhms | - 20 V, 20 V | 4 V | 34.5 nC | - 55 C | + 150 C | 83.3 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | N-Channel | 2 Channel | 100 V | 19.1 A, 19.5 A | 37.7 mOhms, 39.4 mOhms | - 20 V, 20 V | 2.4 V | 13.3 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET | Reel | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 130 A | 9.1 mOhms | - 30 V, 30 V | 2.5 V | 104 nC | - 55 C | + 175 C | 360 W | Enhancement | TrenchMV | Reel | |||||
Mfr: SIHB17N80E-T1-GE3 TTI: SIHB17N80E-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs E Series Power | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 800 V | 15 A | 290 mOhms | - 30 V, 30 V | 2 V | 122 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel |
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