MOSFETs
15.910 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: IRLR014PBF TTI: IRLR014PBF Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT IRLR | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | - 10 V, 10 V | 1 V | 8.4 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: IRFIZ48GPBF TTI: IRFIZ48GPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 60V TO220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 37 A | 18 mOhms | - 20 V, 20 V | 2 V | 110 nC | - 55 C | + 175 C | 50 W | Enhancement | Tube | |||||
Mfr: IRFR020TRPBF TTI: IRFR020TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 60V TO252 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 14 A | 100 mOhms | - 20 V, 20 V | 2 V | 25 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: IRFR024TRLPBF TTI: IRFR024TRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 60V 14 Amp | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 14 A | 100 mOhms | - 20 V, 20 V | 2 V | 25 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 800 mA | 20 Ohms | - 20 V, 20 V | 2 V | 11.3 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1.2 kV | 1.4 A | 15 Ohms | - 30 V, 30 V | 4.5 V | 24.8 nC | - 55 C | + 150 C | 86 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 11 A | 520 mOhms | - 30 V, 30 V | 2 V | 52 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | ||||||
Mfr: IRF610SPBF TTI: IRF610SPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 200V TO263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 3.3 A | 1.5 Ohms | - 20 V, 20 V | 2 V | 8.2 nC | - 55 C | + 150 C | 36 W | Enhancement | Tube | |||||
Mfr: IRLR110PBF TTI: IRLR110PBF Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT IRLR | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | - 10 V, 10 V | 1 V | 6.1 nC | - 55 C | + 150 C | 25 W | Enhancement | Tube | |||||
Mfr: SI2319CDS-T1-BE3 TTI: SI2319CDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CHANNEL 40V (D-S | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 40 V | 4.4 A | 77 mOhms | - 20 V, 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2319CDS-T1-GE3 | |||
Mfr: SIHH105N60EF-T1GE3 TTI: SIHH105N60EF-T1GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600volts 26amp | 0In Stock | Si | SMD/SMT | PowerPAK-8 | N-Channel | 1 Channel | 600 V | 26 A | 91 mOhms | - 30 V, 30 V | 5 V | 33 nC | - 55 C | + 150 C | 174 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 76 A | 39 mOhms | - 30 V, 30 V | 3 V | 92 nC | - 55 C | + 150 C | 460 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 120 A | 24 mOhms | - 20 V, 20 V | 5 V | 185 nC | - 55 C | + 175 C | 700 W | Enhancement | PolarHT | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | - 20 V, 20 V | 5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 32 A | 220 mOhms | - 30 V, 30 V | 3.5 V | 130 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIZ340BDT-T1-GE3 TTI: SIZ340BDT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH DUAL 30V PPAIR 3X3 | 0In Stock | Si | SMD/SMT | PowerPAIR-3x3 | N-Channel | 2 Channel | 30 V | 36 A, 69.3 A | 4.31 mOhms, 8.56 mOhms | - 16 V, 20 V | 2.4 V | 8.4 nC, 15.7 nC | - 55 C | + 150 C | 16.7 W, 31 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 2 A | 7.5 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 86 W | Enhancement | Tube | ||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 110 A | 24 mOhms | - 20 V, 20 V | 3 V | 157 nC | - 55 C | + 150 C | 694 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IRFBF30STRLPBF TTI: IRFBF30STRLPBF Vishay / BC Components Availability: 0In StockMOSFETs N-CH SINGLE 900V TO263 | 0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 55 V | 140 A | 5.4 mOhms | - 20 V, 20 V | 2 V | 82 nC | - 55 C | + 175 C | 180 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIS903DN-T1-GE3 TTI: SIS903DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 2 Channel | 20 V | 6 A | 20.1 mOhms | - 8 V, 8 V | 400 mV | 28 nC | - 55 C | + 150 C | 23 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IXFK300N20X3 TTI: IXFK300N20X3 IXYS Availability: 0In StockMOSFETs N-Ch 200V Enh FET 200Vdgr 300A 4mOhm | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 300 A | 4 mOhms | - 20 V, 20 V | 2.5 V | 375 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 60 A | 35.5 mOhms | - 20 V, 20 V | 2 V | 410 nC | - 55 C | + 150 C | 417 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 4 A | 6 Ohms | - 30 V, 30 V | 2.5 V | 44.5 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 72 A | 20 mOhms | - 20 V, 20 V | 2.5 V | 55 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube |
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