MOSFETs
15.954 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SIHP15N80AE-GE3 TTI: SIHP15N80AE-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 800V TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 13 A | 304 mOhms | 30 V | 4 V | 35 nC | - 55 C | + 155 C | 156 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 100 V | 81 A | 6.1 mOhms | 20 V | 3 V | 73 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | ||||||
Mfr: SIR112DP-T1-RE3 TTI: SIR112DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 133 A | 1.96 mOhms | - 16 V, 20 V | 1.1 V | 59 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 10 A | 200 mOhms | 20 V | 2 V | 11 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | ||||||
Mfr: SIDR610EP-T1-RE3 TTI: SIDR610EP-T1-RE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 200V PPAKSO8DC | 0In Stock | Si | 200 V | 8.9 A | 334 mOhms | 20 V | 4 V | 20 nC | - 55 C | + 175 C | 7.5 W | Reel | ||||||||||
Mfr: SIR680ADP-T1-RE3 TTI: SIR680ADP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 80V PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 125 A | 2.88 mOhms | 20 V | 3.5 V | 43 nC, 55 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 21 A | 160 mOhms | 30 V | 4 V | 59 nC | - 55 C | + 150 C | 208 W | Enhancement | Bulk | ||||||
Mfr: SUD40151EL-GE3 TTI: SUD40151EL-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs TO-252 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 40 V | 42 A | 12 mOhms | 20 V | 1.5 V | 74.3 nC | - 55 C | + 175 C | 50 W | Enhancement | Reel | |||||
Mfr: SUM40010EL-GE3 TTI: SUM40010EL-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 40 V | 120 A | 1.6 mOhms | 20 V | 1.2 V | 230 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | 10 V | 1 V | 8.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Tube | ||||||
Mfr: SIHG080N65SF-GE3 TTI: SIHG080N65SF-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 700V TO-247AC | 0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 650 V | 46 A | 80 mOhms | 20 V | 5 V | 91 nC | - 55 C | + 150 C | 403 W | Enhancement | Tube | |||||
Mfr: SIS4604DN-T1-GE3 TTI: SIS4604DN-T1-GE3 Vishay Availability: 0In StockMOSFETs N-CH SINGLE 60V PPAK1212-8 | 0In Stock | Si | 60 V | 14.6 A | 12.4 mOhms | 20 V | 4 V | 11.2 nC | - 55 C | + 150 C | 3.6 W | Reel | ||||||||||
Mfr: SIHF540S-GE3 TTI: SIHF540S-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V Vds 20V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | |||||
Mfr: IXFH42N60P3 TTI: IXFH42N60P3 IXYS Availability: 0In StockMOSFETs 600V 42A 0.185Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 42 A | 185 mOhms | 30 V | 5 V | 78 nC | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 2 A | 7.5 Ohms | 20 V | 2.5 V | 24.3 nC | - 55 C | + 150 C | 86 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 50 A | 60 mOhms | 30 V | 3 V | 78 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IRFIBE20GPBF TTI: IRFIBE20GPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 800V TO220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 1.4 A | 6.5 Ohms | 20 V | 2 V | 38 nC | - 55 C | + 150 C | 30 W | Enhancement | Tube | |||||
Mfr: SI3493BDV-T1-GE3 TTI: SI3493BDV-T1-GE3 Vishay Semiconductors MOSFETs 20V 8.0A 2.97W 27.5mohm @ 4.5V | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 27.5 mOhms | 8 V | 900 mV | 43.5 nC | - 55 C | + 150 C | 2.97 W | Enhancement | TrenchFET | Reel | SI3493BDV-T1-BE3 SI3493BDV-GE3 | |||
Mfr: IRF840ALPBF TTI: IRF840ALPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 500V TO262 | 0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 30 V | 2 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SI7110DN-T1-E3 TTI: SI7110DN-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V 21.1A 0.0053Ohm | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 21.1 A | 5.3 mOhms | 20 V | 2.5 V | 14 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7110DN-E3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 36 A | 105 mOhms | 30 V | 3 V | 200 nC | - 55 C | + 150 C | 360 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 52 A | 66 mOhms | 20 V | 2.5 V | 110 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 750 mA | 17 Ohms | 30 V | 4.5 V | 7.8 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | ||||||
Mfr: SIA913ADJ-T1-GE3 TTI: SIA913ADJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V 4.5A 6.5W 61mohm @ 4.5V | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 12 V | 4.5 A | 115 mOhms | 8 V | 1 V | 20 nC | - 55 C | + 150 C | 6.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA913ADJ-GE3 | |||
Mfr: SI3430DV-T1-GE3 TTI: SI3430DV-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V 2.4A 2.0W 170mohm @ 10V | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 100 V | 2.4 A | 170 mOhms | 20 V | 2 V | 8.2 nC | - 55 C | + 150 C | 2 W | Enhancement | TrenchFET | Reel | SI3430DV-T1-BE3 SI3430DV-GE3 |