MOSFETs
15.910 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: IXFH400N075T2 TTI: IXFH400N075T2 IXYS Availability: 0In StockMOSFETs TRENCHT2 HIPERFET PWR MOSFET 75V 400A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 75 V | 400 A | 2.3 mOhms | - 20 V, 20 V | 4 V | 420 nC | - 55 C | + 175 C | 1 kW | Enhancement | HiPerFET | Tube | |||
Mfr: IXFP76N15T2 TTI: IXFP76N15T2 IXYS Availability: 0In StockMOSFETs TRENCHT2 HIPERFET PWR MOSFET 150V 76A | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 150 V | 76 A | 20 mOhms | - 20 V, 20 V | 4.5 V | 97 nC | - 55 C | + 175 C | 350 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFT340N075T2 TTI: IXFT340N075T2 IXYS Availability: 0In StockMOSFETs TRENCHT2 HIPERFET PWR MOSFET 75V 340A | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 75 V | 340 A | 3.2 mOhms | - 20 V, 20 V | 4 V | 300 nC | - 55 C | + 175 C | 935 W | Enhancement | HiPerFET | Tube | |||
Mfr: IXFH28N60P3 TTI: IXFH28N60P3 IXYS Availability: 0In StockMOSFETs 600V 28A 0.26Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 28 A | 260 mOhms | - 30 V, 30 V | 5 V | 50 nC | - 55 C | + 150 C | 695 W | Enhancement | HiPerFET | Tube | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 55 V | 360 A | 2.4 mOhms | - 20 V, 20 V | 2 V | 330 nC | - 55 C | + 175 C | 935 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 6 A | 2.2 Ohms | - 20 V, 20 V | 2.5 V | 95 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | |||||
Mfr: IXFA230N075T2-7 TTI: IXFA230N075T2-7 IXYS Availability: 0In StockMOSFETs TrenchT2 HiperFETs Power MOSFET | 0In Stock | Si | SMD/SMT | TO-263AA-3 | N-Channel | 1 Channel | 75 V | 230 A | 4.2 mOhms | - 20 V, 20 V | 2 V | 178 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||
Mfr: SISS70DN-T1-BE3 TTI: SISS70DN-T1-BE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 125V PPK 1212 8S | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8S | N-Channel | 1 Channel | 125 V | 31 A | 29.8 mOhms | 20 V | 4.5 V | 10.2 nC | - 55 C | + 150 C | 65.8 W | Enhancement | Reel | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 200 V | 24 A | 150 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 700 V | 2 A | 850 mOhms | - 30 V, 30 V | 2.5 V | 11.8 nC | - 55 C | + 150 C | 80 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SISF00DN-T1-GE3 TTI: SISF00DN-T1-GE3 Vishay Semiconductors MOSFETs 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8SCD-8 | N-Channel | 2 Channel | 30 V | 60 A | 4.2 mOhms | - 16 V, 20 V | 2.1 V | 53 nC | - 55 C | + 150 C | 69.4 W | Enhancement | TrenchFET, PowerPAK | Reel | |||
0In Stock | Si | Through Hole | TO-247-PLUS-3 | N-Channel | 1 Channel | 300 V | 210 A | 5.5 mOhms | - 20 V, 20 V | 2.5 V | 375 nC | - 55 C | + 150 C | 1.25 mW | Enhancement | HiPerFET | Tube | ||||
Mfr: SISH129DN-T1-GE3 TTI: SISH129DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 11.4 mOhms | - 20 V, 20 V | 2.8 V | 71 nC | - 50 C | + 150 C | 52.1 W | Enhancement | TrenchFET, PowerPAK | Reel | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 6 A | 550 mOhms | - 20 V, 20 V | 4.5 V | 96 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | |||||
Mfr: SIHD180N60E-GE3 TTI: SIHD180N60E-GE3 Vishay Semiconductors MOSFETs 650V Vds; 30V Vgs DPAK (TO-252) | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 19 A | 195 mOhms | - 30 V, 30 V | 3 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 140 A | 11 mOhms | - 20 V, 20 V | 5 V | 155 nC | - 55 C | + 175 C | 600 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 75 A | 21 mOhms | - 20 V, 20 V | 5.5 V | 74 nC | - 55 C | + 175 C | 360 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 600 V | 22 A | 350 mOhms | - 30 V, 30 V | 3 V | 62 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 400 V | 300 mA | 9 Ohms | - 15 V, 15 V | 3.1 V | - 40 C | + 110 C | 2.5 W | Depletion | Reel | ||||||
Mfr: IXFH46N65X2 TTI: IXFH46N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/46A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 46 A | 76 mOhms | - 30 V, 30 V | 2.7 V | 75 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | |||
Mfr: SIJ494DP-T1-GE3 TTI: SIJ494DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-Ch 150V Vds 16.1nC Qg Typ | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 150 V | 36.8 A | 19.3 mOhms | - 20 V, 20 V | 2.5 V | 31 nC | - 55 C | + 150 C | 69.4 W | Enhancement | ThunderFET, PowerPAK | Reel | |||
Mfr: SIRA62DP-T1-RE3 TTI: SIRA62DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 80 A | 1.2 mOhms | - 12 V, 16 V | 1 V | 61.5 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 56 A | 27 mOhms | - 20 V, 20 V | 2.5 V | 56 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 72 A | 19 mOhms | - 30 V, 30 V | 2.5 V | 82 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 30 A | 60 mOhms | - 20 V, 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube |
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