MOSFETs
15.910 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHF9520S-GE3 TTI: SIHF9520S-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V Vds 20V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 6.8 A | 600 mOhms | - 20 V, 20 V | 4 V | 18 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 120 A | 24 mOhms | - 20 V, 20 V | 5 V | 185 nC | - 55 C | + 175 C | 700 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 140 A | 24 mOhms | - 20 V, 20 V | 3 V | 185 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 14 A | 550 mOhms | - 30 V, 30 V | 3 V | 36 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SI1469DH-T1-GE3 TTI: SI1469DH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 155 mOhms | - 12 V, 12 V | 1.5 V | 8.5 nC | - 55 C | + 150 C | 2.78 W | Enhancement | TrenchFET | Reel | SI1469DH-T1-BE3 | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.75 Ohms | - 30 V, 30 V | 5 V | 92 nC | - 55 C | + 150 C | 250 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IXFX360N10T TTI: IXFX360N10T IXYS Availability: 0In StockMOSFETs TRENCH HIPERFET PWR MOSFET 100V 360A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 360 A | 2.9 mOhms | - 20 V, 20 V | 2.5 V | 525 nC | - 55 C | + 175 C | 1.25 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | TO-263AA-3 | N-Channel | 1 Channel | 1 kV | 6 A | 2.2 Ohms | - 20 V, 20 V | 2.5 V | 95 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | ||||||
Mfr: IRF830ALPBF TTI: IRF830ALPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 500V 5.0 Amp | 0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 500 V | 5 A | 1.4 Ohms | - 30 V, 30 V | 2 V | 24 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 4.5 A | 540 mOhms | - 20 V, 20 V | 2 V | 8.3 nC | - 55 C | + 175 C | 27 W | Enhancement | Tube | ||||||
Mfr: IRFIBF30GPBF TTI: IRFIBF30GPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 900V TO220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 1.9 A | 3.7 Ohms | - 20 V, 20 V | 2 V | 78 nC | - 55 C | + 150 C | 35 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 8 A | 200 mOhms | - 20 V, 20 V | 2 V | 11 nC | - 55 C | + 175 C | 27 W | Enhancement | Tube | ||||||
Mfr: IXFB110N60P3 TTI: IXFB110N60P3 IXYS Availability: 0In StockMOSFETs 600V 110A 0.056Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 600 V | 110 A | 56 mOhms | - 30 V, 30 V | 5 V | 245 nC | - 55 C | + 150 C | 1.89 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: IXTT110N10L2 TTI: IXTT110N10L2 IXYS Availability: 0In StockMOSFETs Linear Extended FBSOA Power MOSFET | 0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 100 V | 110 A | 18 mOhms | - 20 V, 20 V | 2.5 V | 260 nC | - 55 C | + 150 C | 600 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 200 V | 32 A | 130 mOhms | - 15 V, 15 V | 4 V | 180 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 32 A | 130 mOhms | - 15 V, 15 V | 4 V | 185 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 50 V | 48 A | 30 mOhms | Tube | |||||||||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 150 V | 10 A | 350 mOhms | - 15 V, 15 V | 4.5 V | 36 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 200 V | 68 A | 55 mOhms | - 15 V, 15 V | 4 V | 380 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | ||||||
Mfr: SIS427EDN-T1-GE3 TTI: SIS427EDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -30V Vds 25V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 50 A | 21.3 mOhms | - 25 V, 25 V | 2.5 V | 66 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHB23N60E-GE3 TTI: SIHB23N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 23 A | 158 mOhms | - 30 V, 30 V | 4 V | 63 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: SIZ340DT-T1-GE3 TTI: SIZ340DT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAIR 3 x 3 | 0In Stock | Si | SMD/SMT | PowerPAIR-3x3-8 | N-Channel | 2 Channel | 30 V | 30 A, 40 A | 9.5 mOhms, 5.1 mOhms | - 16 V, 20 V | 1 V | 19 nC, 35 nC | - 55 C | + 150 C | 16.7 W, 31 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHP25N50E-GE3 TTI: SIHP25N50E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 500V Vds 30V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 26 A | 145 mOhms | - 30 V, 30 V | 4 V | 57 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | SIHP25N50E-BE3 | ||||
0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 500 V | 26 A | 145 mOhms | - 30 V, 30 V | 4 V | 57 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 10 A | 1.1 Ohms | - 30 V, 30 V | 5.5 V | 40 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube |
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