MOSFETs
15.910 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 55 V | 90 A | 8.4 mOhms | - 20 V, 20 V | 2 V | 42 nC | - 55 C | + 175 C | 150 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IXFK360N15T2 TTI: IXFK360N15T2 IXYS Availability: 0In StockMOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET | 0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 360 A | 4 mOhms | - 20 V, 20 V | 2.5 V | 715 nC | - 55 C | + 175 C | 1.67 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 20 V | 20 A | 6 mOhms | - 16 V, 16 V | 1 V | 95 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4114DY-GE3 | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 850 V | 8 A | 850 mOhms | - 30 V, 30 V | 3 V | 17 nC | - 55 C | + 150 C | 200 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SISS76LDN-T1-GE3 TTI: SISS76LDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 70V PPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 70 V | 67.4 A | 5.2 mOhms | - 12 V, 12 V | 1.6 V | 22.3 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 60 A | 18 mOhms | - 20 V, 20 V | 2.5 V | 49 nC | - 55 C | + 175 C | 176 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 12 A | 2 Ohms | - 30 V, 30 V | 4.5 V | 106 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 40 V | 100 A | 7 mOhms | - 20 V, 20 V | 2 V | 25.5 nC | - 55 C | + 175 C | 150 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 200 V | 90 A | 44 mOhms | - 20 V, 20 V | 4.5 V | 205 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 10 A | 1.1 Ohms | - 30 V, 30 V | 5.5 V | 40 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IXFX80N60P3 TTI: IXFX80N60P3 IXYS Availability: 0In StockMOSFETs 600V 80A 0.07Ohm PolarP3 Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 80 A | 70 mOhms | - 30 V, 30 V | 5 V | 190 nC | - 55 C | + 150 C | 1.3 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 60 V | 14 A | 100 mOhms | - 20 V, 20 V | 2 V | 25 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Tube | ||||||
Mfr: SI3129DV-T1-GE3 TTI: SI3129DV-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CH SINGLE -80V TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 80 V | 5.4 A | 82.7 mOhms | - 20 V, 20 V | 2.5 V | 12 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 10 A | 1.5 Ohms | - 20 V, 20 V | 4.5 V | 200 nC | - 55 C | + 150 C | 695 W | Depletion | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 150 A | 12.4 mOhms | - 20 V, 20 V | 4 V | 110 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 1.4 A | 11 Ohms | - 20 V, 20 V | 2.5 V | 17.8 nC | - 55 C | + 150 C | 63 W | Enhancement | Tube | ||||||
Mfr: IRFPF50PBF TTI: IRFPF50PBF Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT IRFP | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 900 V | 6.7 A | 1.6 Ohms | - 20 V, 20 V | 2 V | 200 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SIHB22N65E-GE3 TTI: SIHB22N65E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 650V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 700 V | 22 A | 180 mOhms | - 30 V, 30 V | 4 V | 73 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: SI5458DU-T1-GE3 TTI: SI5458DU-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 30 V | 6 A | 41 mOhms | - 20 V, 20 V | 1.2 V | 9 nC | - 55 C | + 150 C | 10.4 W | Enhancement | TrenchFET | Reel | SI5458DU-GE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 10 A | 200 mOhms | - 20 V, 20 V | 2 V | 11 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | ||||||
Mfr: SIHFBC40ASTRL-GE3 TTI: SIHFBC40ASTRL-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 600V TO263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | Reel | |||||||||||||||||
Mfr: SIHF610L-GE3 TTI: SIHF610L-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 200V TO262 | 0In Stock | Si | Tube | |||||||||||||||||||
Mfr: SIHF634S-GE3 TTI: SIHF634S-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 250V TO263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | Tube | |||||||||||||||||
Mfr: SIHFU310-GE3 TTI: SIHFU310-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 400V TO251 | 0In Stock | Si | Tube | |||||||||||||||||||
Mfr: SIHFU420A-GE3 TTI: SIHFU420A-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 500V TO251 | 0In Stock | Si | Through Hole | TO-251-3 | Tube |
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