MOSFETs
15.954 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIS447DN-T1-GE3 TTI: SIS447DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -20V Vds 12V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 18 A | 12.5 mOhms | 12 V | 1.2 V | 181 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IXFH46N65X2 TTI: IXFH46N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/46A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 46 A | 76 mOhms | 30 V | 2.7 V | 75 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 14.5 A | 243 mOhms | 30 V | 4 V | 33 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | SIHP15N50E-BE3 | |||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 400 V | 300 mA | 9 Ohms | 15 V | 3.1 V | - 40 C | + 110 C | 2.5 W | Depletion | Reel | |||||||
Mfr: SIHP15N65E-GE3 TTI: SIHP15N65E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 650V Vds 30V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 15 A | 280 mOhms | 30 V | 4 V | 48 nC | - 55 C | + 150 C | 34 W | Enhancement | Tube | |||||
Mfr: SIHW47N60EF-GE3 TTI: SIHW47N60EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs RECOMMENDED ALT SIHG | 0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 380 mOhms | 30 V | 4 V | 35 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 200 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.5 kV | 4 A | 6 Ohms | 30 V | 2.5 V | 375 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 4.5 kV | 1 A | 80 Ohms | 20 V | 3.5 V | 46 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 2 A | 15 Ohms | 30 V | 6 V | 72 nC | - 55 C | + 150 C | 290 W | Enhancement | Linear | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 75 V | 80 A | 24 mOhms | 20 V | 2.5 V | 103 nC | - 55 C | + 150 C | 357 W | Enhancement | Linear L2 | Tube | |||||
Mfr: SI4062DY-T1-GE3 TTI: SI4062DY-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 32.1 A | 4.2 mOhms | 20 V | 1.4 V | 40 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4936CDY-T1-E3 TTI: SI4936CDY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 5.8 A | 40 mOhms | 20 V | 1.2 V | 9 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 34 mOhms | 20 V | 1 V | 33 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | SI3483CDV-T1-BE3 SI3483CDV-GE3 | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 16 A | 400 mOhms | 30 V | 3 V | 43 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 14 A | 550 mOhms | 30 V | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | |||||||
Mfr: IXFX520N075T2 TTI: IXFX520N075T2 IXYS Availability: 0In StockMOSFETs TRENCHT2 HIPERFET PWR MOSFET 75V 520A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 75 V | 520 A | 2.2 mOhms | 20 V | 5 V | 545 nC | - 55 C | + 175 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 1 A | 15 Ohms | 20 V | - 55 C | + 150 C | 50 W | Enhancement | Tube | ||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 180 A | 6.4 mOhms | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | ||||||||
Mfr: SISS70DN-T1-BE3 TTI: SISS70DN-T1-BE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 125V PPK 1212 8S | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8S | N-Channel | 1 Channel | 125 V | 31 A | 29.8 mOhms | 20 V | 4.5 V | 10.2 nC | - 55 C | + 150 C | 65.8 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 8 A | 450 mOhms | 30 V | 2 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | SIHG11N80AE | |||||
Mfr: SIZ260DT-T1-GE3 TTI: SIZ260DT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs DUAL N-CHANNEL 80-V PowerPAIR 3 x 3S | 0In Stock | Si | SMD/SMT | PowerPAIR-3x3-8 | N-Channel | 2 Channel | 80 V | 24.6 A, 24.7 A | 24.5 mOhms, 24.7 mOhms | 20 V | 1.1 V | 13.1 nC, 13.3 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SISS40DN-T1-GE3 TTI: SISS40DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S-8 | N-Channel | 1 Channel | 100 V | 36.5 A | 21 mOhms | 20 V | 2.3 V | 24 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel |