MOSFETs
15.925 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: TK5P50D(T6RSS-Q) TTI: TK5P50D(T6RSS-Q) Toshiba Availability: 0In StockMOSFETs N-Ch MOS 5A 500V 80W 490pF 1.5 Ohm | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 5 A | 1.3 Ohms | - 30 V, 30 V | 4.4 V | 11 nC | - 55 C | + 150 C | 80 W | Enhancement | MOSVII | Reel | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 60 A | 1.6 mOhms | - 12 V, 12 V | 600 mV | 36.5 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR404DP-GE3 | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 15 A | 760 mOhms | - 30 V, 30 V | 6.5 V | 97 nC | - 55 C | + 150 C | 543 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 88 A | 40 mOhms | - 20 V, 20 V | 2.5 V | 180 nC | - 55 C | + 150 C | 600 W | Enhancement | Tube | ||||||
Mfr: IXTA120P065T-TRL TTI: IXTA120P065T-TRL IXYS Availability: 0In StockMOSFETs P-CH SINGLE -65V TO263D2 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 65 V | 120 A | 10 mOhms | - 15 V, 15 V | 2 V | 185 nC | - 55 C | + 150 C | 289 W | Enhancement | TrenchP | Reel | ||||
Mfr: SIZF660LDT-T1-GE3 TTI: SIZF660LDT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH DUAL 60V PPAIR 6X5FS | 0In Stock | Reel | ||||||||||||||||||||
0In Stock | Si | SMD/SMT | TO-263HV-2 | N-Channel | 1 Channel | 1.7 kV | 1 A | 16 Ohms | - 20 V, 20 V | 4.5 V | 47 nC | - 55 C | + 150 C | 290 W | Depletion | Tube | ||||||
0In Stock | Si | SMD/SMT | DPAK- | N-Channel | 1 Channel | 650 V | 24 A | 156 mOhms | - 30 V, 30 V | 4 V | 81 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 120 mOhms | - 30 V, 30 V | 3 V | 45 nC | - 55 C | + 150 C | 34 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 90 A | 12.8 mOhms | - 20 V, 20 V | 2.5 V | 78 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIHA240N60E-GE3 TTI: SIHA240N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds; +/-30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 240 mOhms | - 30 V, 30 V | 3 V | 23 nC | - 55 C | + 150 C | 31 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 310 mOhms | - 30 V, 30 V | 3 V | 18.5 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIHD2N80AE-GE3 TTI: SIHD2N80AE-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs Nch 800V Vds 30V Vgs TO-252 (DPAK) | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 2.9 A | 2.5 Ohms | - 30 V, 30 V | 4 V | 7 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Tube | |||||
Mfr: SISS30LDN-T1-GE3 TTI: SISS30LDN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs Nch 80V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK1212-8 | N-Channel | 1 Channel | 80 V | 55.5 A | 8.5 mOhms | - 20 V, 20 V | 1 V | 50 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 90 A | 33 mOhms | - 20 V, 20 V | 5.2 V | 95 nC | - 55 C | + 150 C | 960 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 130 A | 8.5 mOhms | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | ||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 130 A | 8.5 mOhms | - 55 C | + 175 C | 360 W | Enhancement | HiPerFET | Tube | ||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 8.1 A | 450 mOhms | - 20 V, 20 V | 2 V | 41 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 80 A | 14 mOhms | - 20 V, 20 V | 2.5 V | 60 nC | - 55 C | + 175 C | 230 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 30 V | 12 A | 20 mOhms | - 20 V, 20 V | 1 V | 20 nC | - 55 C | + 150 C | 19.2 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA432DJ-GE3 | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 40 mOhms | - 20 V, 20 V | 3 V | 150 nC | - 55 C | + 150 C | Enhancement | CoolMOS | Tube | ||||||
Mfr: SIR5810DP-T1-RE3 TTI: SIR5810DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CHANNEL 80-V (D-S) 150C MOSFET | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 80 V | 53.3 A | 10 mOhms | - 20 V, 20 V | 4 V | 12.2 nC | - 55 C | + 150 C | 56.8 W | Enhancement | Reel | |||||
Mfr: SIZ346DT-T1-GE3 TTI: SIZ346DT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAIR 3 x 3 | 0In Stock | Si | SMD/SMT | PowerPAIR-3x3-8 | N-Channel | 2 Channel | 30 V | 17 A, 30 A | 11.5 mOhms, 28.5 mOhms | - 16 V, 20 V | 2.2 V, 2.4 V | 6.6 nC, 10 nC | - 55 C | + 150 C | 16 W, 16.7 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 3 kV | 1 A | 50 Ohms | - 20 V, 20 V | 2 V | 30.6 nC | - 55 C | + 150 C | 195 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 3.5 A | 3 Ohms | - 30 V, 30 V | 3 V | 14.2 nC | - 55 C | + 150 C | 100 W | Enhancement | Tube |
