MOSFETs
15.954 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SIHK045N60EF-T1GE3 TTI: SIHK045N60EF-T1GE3 Vishay Semiconductors MOSFETs N-CH SINGLE 600V PPAK10X12 | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 80 V | 66 A | 12.5 mOhms | 20 V | 2.5 V | 45 nC | - 55 C | + 175 C | 135 W | Enhancement | Reel | |||||
Mfr: SIR638DP-T1-GE3 TTI: SIR638DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 100 A | 880 uOhms | - 16 V, 20 V | 2.3 V | 204 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | HiPerFET | Tube | |||||||||||||||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 250 V | 80 A | 13 mOhms | 20 V | 2.5 V | 83 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 18 A | 120 mOhms | 15 V | 4.5 V | 39 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 94 A | 10.6 mOhms | 20 V | 4.5 V | 77 nC | - 55 C | + 175 C | 360 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 220 A | 6.2 mOhms | 20 V | 2.5 V | 204 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 55 V | 90 A | 7 mOhms | 20 V | 4 V | 42 nC | - 55 C | + 175 C | 150 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIHG125N65E-GE3 TTI: SIHG125N65E-GE3 Vishay Availability: 0In StockMOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.12 10V | 0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 650 V | 27 A | 120 mOhms | 30 V | 5 V | 38 nC | - 55 C | + 150 C | 208 W | Enhancement | Tube | |||||
Mfr: SISA10BDN-T1-GE3 TTI: SISA10BDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 30V PPAK1212-8 | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 30 V | 26 A | 3.6 mOhms | - 16 V, 20 V | 2.4 V | 24.1 nC | - 55 C | + 150 C | 3.8 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 25 A | 125 mOhms | 30 V | 5 V | 31 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||||
Mfr: SI5908BDC-T1-GE3 TTI: SI5908BDC-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH DUAL 20V CHIPFET | 0In Stock | Reel | ||||||||||||||||||||
Mfr: SIHG050N65SF-GE3 TTI: SIHG050N65SF-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 650V TO247AC | 0In Stock | Tube | ||||||||||||||||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 600 V | 10 A | 1 Ohms | 20 V | 5 V | 135 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
Mfr: SIS862ADN-T1-GE3 TTI: SIS862ADN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 60V PPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 60 V | 52 A | 11 mOhms | 20 V | 1 V | 19.8 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.2 kV | 3 A | 4.5 Ohms | 20 V | 2.5 V | 42 nC | - 55 C | + 150 C | 200 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 180 A | 6.4 mOhms | 20 V | 2.5 V | 151 nC | - 55 C | + 175 C | 480 W | Enhancement | Trench | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 200 V | 26 A | 170 mOhms | 20 V | 2.5 V | 56 nC | - 55 C | + 175 C | 300 W | Enhancement | PolarP | Reel | |||||
Mfr: SIHB120N60E-T1-GE3 TTI: SIHB120N60E-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 600V TO263 | 0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 52 A | 50 mOhms | 20 V | 2 V | 60 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 51 A | 50 mOhms | 30 V | 5 V | 130 nC | - 55 C | + 150 C | 278 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 6 A | 350 mOhms | 30 V | 4 V | 53 nC | - 55 C | + 150 C | 33 W | Enhancement | Reel | ||||||
Mfr: SIHFL110TR-BE3 TTI: SIHFL110TR-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 100V SOT223 | 0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | SIHFL110TR-GE3 | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 500 V | 10 A | 1 Ohms | 20 V | 2 V | 50 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Reel |
