MOSFETs
15.954 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI8819EDB-T2-E1 TTI: SI8819EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -12V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 12 V | 2.9 A | 80 mOhms | 8 V | 900 mV | 7 nC | - 55 C | + 150 C | 900 mW | Enhancement | Reel | |||||
Mfr: SISS42DN-T1-GE3 TTI: SISS42DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S-8 | N-Channel | 1 Channel | 100 V | 40.5 A | 14.4 mOhms | 20 V | 2 V | 24.8 nC | - 55 C | + 150 C | 57 W | Enhancement | Reel | |||||
Mfr: SIHP35N60EF-GE3 TTI: SIHP35N60EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 32 A | 97 mOhms | 30 V | 2 V | 134 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 59.6 A | 7.4 mOhms | 20 V | 2 V | 44 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
Mfr: SIRA14BDP-T1-GE3 TTI: SIRA14BDP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds; 20/-16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 21 A | 5.38 mOhms | - 16 V, 20 V | 1.1 V | 22 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | |||||
Mfr: SISS42LDN-T1-GE3 TTI: SISS42LDN-T1-GE3 Vishay Semiconductors MOSFETs Nch 100V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 100 V | 39 A | 14.9 mOhms | 20 V | 1 V | 48 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 19 A | 201 mOhms | 30 V | 3 V | 21 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | ||||||
Mfr: SISF02DN-T1-GE3 TTI: SISF02DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH DUAL 25V PPAK1212-8SCD | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.15 mOhms | - 16 V, 20 V | 1.1 V | 51 nC | - 55 C | + 150 C | 52 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SISHA10DN-T1-GE3 TTI: SISHA10DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 30V PPAK1212-8SH | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 30 A | 3.7 mOhms | - 16 V, 20 V | 1.1 V | 34 nC | - 55 C | + 150 C | 39 W | Enhancement | PowerPAK | Reel | ||||
Mfr: SUP60020E-GE3 TTI: SUP60020E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 80V TO220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 150 A | 2.8 mOhms | 20 V | 2 V | 151.2 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Bulk | ||||
0In Stock | Si | SMD/SMT | TO-263AA-3 | N-Channel | 1 Channel | 1 kV | 6 A | 2.2 Ohms | 20 V | 2.5 V | 95 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | 30 V | 3 V | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 34 A | 96 mOhms | 30 V | 3 V | 54 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SISF04DN-T1-GE3 TTI: SISF04DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 30V(S1-S2) PowerPAK 1212-8F | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 30 V | 108 A | 4 mOhms | - 12 V, 16 V | 2.3 V | 40 nC | - 55 C | + 150 C | 69.4 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 8 A | 391 mOhms | 30 V | 4 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Bulk | ||||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 72 A | 19 mOhms | 20 V | 2.5 V | 82 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIHD690N60E-GE3 TTI: SIHD690N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V DPAK (TO-252) N-CHANNEL | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 6.4 A | 700 mOhms | 30 V | 5 V | 8 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Tube | |||||
Mfr: SIR140DP-T1-RE3 TTI: SIR140DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 25V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 25 V | 100 A | 900 uOhms | - 16 V, 20 V | 1 V | 113 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 90 A | 12.8 mOhms | 20 V | 2.5 V | 78 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 6.83 mOhms | - 16 V, 20 V | 2.4 V | 12.2 nC | - 55 C | + 150 C | 17 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 46 A | 55 mOhms | 20 V | 2 V | 230 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | ||||||
Mfr: IRLIZ14GPBF TTI: IRLIZ14GPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 60V TO220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 8 A | 200 mOhms | 10 V | 1 V | 8.4 nC | - 55 C | + 175 C | 25 W | Enhancement | Tube | |||||
Mfr: IRFBF30PBF TTI: IRFBF30PBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 900V TO220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 3.6 A | 3.7 Ohms | 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBF30PBF-BE3 | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 32 A | 150 mOhms | 30 V | 3 V | 150 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IRF510STRRPBF TTI: IRF510STRRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 100V TO263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 20 V | 2 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Reel |