MOSFETs
15.924 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIS435DNT-T1-GE3 TTI: SIS435DNT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8T | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 30 A | 4.4 mOhms | - 8 V, 8 V | 900 mV | 180 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.7 kV | 2 A | 6.5 Ohms | - 20 V, 20 V | 4.5 V | 110 nC | - 55 C | + 150 C | 568 W | Depletion | Tube | ||||||
Mfr: SIHF740AL-GE3 TTI: SIHF740AL-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 400V TO262 | 0In Stock | Si | Tube | |||||||||||||||||||
Mfr: SIHFBC20L-GE3 TTI: SIHFBC20L-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 600V TO262 | 0In Stock | Si | Tube | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 60 A | 35 mOhms | - 30 V, 30 V | 4 V | 394 nC | - 55 C | + 150 C | 417 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 20 A | 180 mOhms | - 30 V, 30 V | 4 V | 48 nC | - 55 C | + 150 C | 33 W | Enhancement | Tube | ||||||
Mfr: SIHD14N60ET5-GE3 TTI: SIHD14N60ET5-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 600V TO252 | 0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 300 V | 38 A | 50 mOhms | - 20 V, 20 V | 2.5 V | 35 nC | - 55 C | + 150 C | 240 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 150 A | 8.3 mOhms | - 20 V, 20 V | 2.5 V | 254 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 44 A | 40 mOhms | - 20 V, 20 V | 2.5 V | 33 nC | - 55 C | + 150 C | 240 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 250 V | 120 A | 12 mOhms | - 20 V, 20 V | 4.5 V | 122 nC | - 55 C | + 150 C | 480 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1.2 kV | 1.4 A | 13 Ohms | - 30 V, 30 V | 2.5 V | 24.8 nC | - 55 C | + 150 C | 86 W | Enhancement | Polar | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 3 kV | 4 A | 12.5 Ohms | - 20 V, 20 V | 3 V | 139 nC | - 55 C | + 150 C | 960 W | Enhancement | Polar3 | Tube | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 65.8 A | 8 mOhms | - 20 V, 20 V | 4 V | 26.5 nC, 34.5 nC | - 55 C | + 150 C | 83.3 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 4 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840APBF | |||||
Mfr: SI2319CDS-T1-BE3 TTI: SI2319CDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CHANNEL 40V (D-S | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 40 V | 4.4 A | 77 mOhms | - 20 V, 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2319CDS-T1-GE3 | |||
Mfr: SIZ340BDT-T1-GE3 TTI: SIZ340BDT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH DUAL 30V PPAIR 3X3 | 0In Stock | Si | SMD/SMT | PowerPAIR-3x3 | N-Channel | 2 Channel | 30 V | 36 A, 69.3 A | 4.31 mOhms, 8.56 mOhms | - 16 V, 20 V | 2.4 V | 8.4 nC, 15.7 nC | - 55 C | + 150 C | 16.7 W, 31 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SQW61N65EF-GE3 TTI: SQW61N65EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 700V TO247 AECQ | 0In Stock | Si | Through Hole | TO-247AD-3 | N-Channel | 1 Channel | 650 V | 62 A | 52 mOhms | - 30 V, 30 V | 4 V | 229 nC | - 55 C | + 175 C | 625 W | Enhancement | AEC-Q101 | Bulk | ||||
Mfr: SI7116BDN-T1-GE3 TTI: SI7116BDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CHANNEL 40V (D-S) MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8PT | N-Channel | 1 Channel | 40 V | 65 A | 7.4 mOhms | - 20 V, 20 V | 2.5 V | 31.4 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2302CDS-T1-BE3 TTI: SI2302CDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 20V TO236 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | - 8 V, 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-GE3 | |||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | - 8 V, 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | Reel | SI2302DDS-T1-GE3 | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 8 V | 6 A | 17 mOhms | - 5 V, 5 V | 800 mV | 6 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2342DS-T1-GE3 | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 3.1 A | 126 mOhms | - 20 V, 20 V | 3 V | 2.9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2392ADS-T1-GE3 | |||||
0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 8 A | 26 mOhms | - 20 V, 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 3.6 W | Enhancement | Reel | SI3424CDV-T1-GE3 | |||||
0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 20 V | 7.9 A | 28 mOhms | - 8 V, 8 V | 1 V | 18 nC | - 55 C | + 150 C | 2.7 W | Enhancement | Reel | SI3460DDV-T1-GE3 |