MOSFETs
15.924 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | PLUS-264-3 | N-Channel | 1 Channel | 600 V | 82 A | 75 mOhms | - 30 V, 30 V | 5 V | 240 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||||
Mfr: IRF720STRRPBF TTI: IRF720STRRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 400V 3.3 Amp | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | Reel | |||||||||||||||||
Mfr: SIHF840S-GE3 TTI: SIHF840S-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 500V TO263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | Tube | |||||||||||||||||
Mfr: IRFR1N60ATRLPBF TTI: IRFR1N60ATRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 600V 1.4 Amp | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 1.4 A | 7 Ohms | - 30 V, 30 V | 2 V | 14 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | |||||
Mfr: IRFR220TRRPBF TTI: IRFR220TRRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 200V TO252 | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 4.8 A | 800 mOhms | - 20 V, 20 V | 2 V | 14 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: IRF630SPBF TTI: IRF630SPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 200V TO263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 9 A | 400 mOhms | - 20 V, 20 V | 2 V | 43 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | - 20 V, 20 V | 3 V | 2 nC | - 55 C | + 150 C | 2.3 W | Enhancement | Reel | SI2303CDS-T1-GE3 | |||||
0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 8 A | 391 mOhms | - 30 V, 30 V | 4 V | 42 nC | - 55 C | + 150 C | 31 W | Enhancement | Bulk | ||||||
Mfr: SI3483DDV-T1-BE3 TTI: SI3483DDV-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CH SINGLE -30V TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 31.2 mOhms | - 20 V, 16 V | 2.2 V | 4.5 nC | - 55 C | + 150 C | 3 W | Enhancement | Reel | SI3483DDV-T1-GE3 | ||||
Mfr: SIHG21N80AEF-GE3 TTI: SIHG21N80AEF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 800V TO-247AC | 0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 800 V | 16.3 A | 250 mOhms | - 30 V, 30 V | 4 V | 71 nC | - 55 C | + 150 C | 179 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | TO-220AB | N-Channel | 1 Channel | 100 V | 150 A | 4 mOhms | - 10 V, 10 V | 4 V | 84 nC | - 55 C | + 175 C | 278 W | Reel | |||||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 80 V | 84.1 A | 3.2 mOhms | - 20 V, 20 V | 4 V | 44.5 nC | - 55 C | + 150 C | 92.5 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 100 V | 120 A | 3.2 mOhms | - 20 V, 20 V | 4 V | 86 nC | - 55 C | + 150 C | 132 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 600 V | 53 mA | 72 Ohms | - 20 V, 20 V | 5 V | 2.5 nC | - 55 C | + 150 C | 500 mW | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOT-23S-3 | N-Channel | 1 Channel | 60 V | 2.5 A | 90 mOhms | - 20 V, 20 V | 3 V | 5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | ||||||
Mfr: SIHP155N60EF-GE3 TTI: SIHP155N60EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 600V TO220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 21 A | 136 mOhms | - 30 V, 30 V | 5 V | 25 nC | - 55 C | + 150 C | 179 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 310 mOhms | - 30 V, 30 V | 3 V | 18.5 nC | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 48 A | 65 mOhms | - 30 V, 30 V | 3 V | 76 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | ISOPLUS-i5-PAK-3 | N-Channel | 1 Channel | 4.7 kV | 2 A | 20 Ohms | - 20 V, 20 V | 3.5 V | 180 nC | - 55 C | + 150 C | 220 W | Enhancement | ISOPLUS i5-PAC | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 5 A | 950 mOhms | - 30 V, 30 V | 4 V | 15 nC | - 55 C | + 150 C | 62.5 W | Enhancement | Tube | ||||||
Mfr: SIHB068N60EF-GE3 TTI: SIHB068N60EF-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 600V TO263 | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 600 V | 41 A | 68 mOhms | - 30 V, 30 V | 5 V | 51 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | ||||||
Mfr: SIHG186N60EF-GE3 TTI: SIHG186N60EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 600V TO247AC | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 8.4 A | 168 mOhms | - 30 V, 30 V | 5 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 15 A | 250 mOhms | - 30 V, 30 V | 4 V | 41 nC | - 55 C | + 155 C | 179 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | - 20 V, 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBE30PBF | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 29 nC | - 55 C | + 150 C | 147 W | Enhancement | Tube | SIHP12N60E-GE3 SIHP12N60E-E3 |