MOSFETs
15.910 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI9407BDY-T1-E3 TTI: SI9407BDY-T1-E3 Vishay Semiconductors Availability: 5.000In StockMOSFETs -60V Vds 20V Vgs SO-8 | 5.000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.7 A | 100 mOhms | - 20 V, 20 V | 1 V | 14.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI9407BDY-E3 | |||
300In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 500 V | 10 A | 1 Ohms | - 20 V, 20 V | 2 V | 50 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | |||||
Mfr: SI1062X-T1-GE3 TTI: SI1062X-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 20V Vds 8V Vgs SC89-3 | 6.000In Stock | Si | SMD/SMT | SC-89-3 | N-Channel | 1 Channel | 20 V | 530 mA | 420 mOhms | - 8 V, 8 V | 400 mV | 2.7 nC | - 55 C | + 150 C | 220 mW | Enhancement | TrenchFET | Reel | ||||
90In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 100 V | 110 A | 15 mOhms | - 20 V, 20 V | 5 V | 110 nC | - 55 C | + 175 C | 480 W | Enhancement | PolarHT | Tube | |||||
Mfr: SI3473CDV-T1-GE3 TTI: SI3473CDV-T1-GE3 Vishay Semiconductors Availability: 12.000In Stock60.000 On Order Expected MOSFETs -12V Vds 8V Vgs TSOP-6 | 12.000In Stock60.000 On Order Expected | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 12 V | 8 A | 22 mOhms | - 8 V, 8 V | 1 V | 65 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | SI3473CDV-T1-BE3 SI3473CDV-GE3 | |||
Mfr: SIHG73N60E-GE3 TTI: SIHG73N60E-GE3 Vishay / Siliconix Availability: 800In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 800In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 73 A | 39 mOhms | - 30 V, 30 V | 4 V | 241 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube | |||||
Mfr: SIR186LDP-T1-RE3 TTI: SIR186LDP-T1-RE3 Vishay / Siliconix Availability: 6.000In Stock6.000 On Order Expected 11-Jan-27 MOSFETs N-CH SINGLE 60V PPAK SO-8 | 6.000In Stock6.000 On Order Expected 11-Jan-27 | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 80.3 A | 4.4 mOhms | - 20 V, 20 V | 2.5 V | 31.5 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7949DP-T1-GE3 TTI: SI7949DP-T1-GE3 Vishay Semiconductors Availability: 6.000In Stock6.000 On Order Expected 19-Jan-27 MOSFETs -60V Vds 20V Vgs PowerPAK SO-8 | 6.000In Stock6.000 On Order Expected 19-Jan-27 | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 2 Channel | 60 V | 5 A | 64 mOhms | - 20 V, 20 V | 3 V | 26 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI7949DP-GE3 | |||
Mfr: SISS26LDN-T1-GE3 TTI: SISS26LDN-T1-GE3 Vishay / Siliconix Availability: 6.000In StockMOSFETs Nch 60V Vds 20V Vgs PowerPAK 1212-8S | 6.000In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 60 V | 81.2 A | 4.3 mOhms | - 20 V, 20 V | 1 V | 48 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIB452DK-T1-GE3 TTI: SIB452DK-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs 190V Vds 16V Vgs PowerPAK SC-75 | 3.000In Stock | Si | SMD/SMT | SC-75-6 | N-Channel | 1 Channel | 190 V | 1.5 A | 2.4 Ohms | - 16 V, 16 V | 600 mV | 6.5 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | SIB452DK-GE3 | |||
Mfr: SISH892BDN-T1-GE3 TTI: SISH892BDN-T1-GE3 Vishay / Siliconix Availability: 9.000In StockMOSFETs N-CH SINGLE 100V PPAK1212-8SH | 9.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 20 A | 30.4 mOhms | - 20 V, 20 V | 2.4 V | 17.4 nC | - 55 C | + 150 C | 29 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI3429EDV-T1-GE3 TTI: SI3429EDV-T1-GE3 Vishay Semiconductors Availability: 39.000In StockMOSFETs -20V Vds 8V Vgs TSOP-6 | 39.000In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 38 mOhms | - 8 V, 8 V | 1 V | 118 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI6562CDQ-T1-GE3 TTI: SI6562CDQ-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -20V Vds 12V Vgs TSSOP-8 N&P PAIR | 3.000In Stock | Si | SMD/SMT | TSSOP-8 | N-Channel, P-Channel | 2 Channel | 20 V | 6.1 A, 6.7 A | 22 mOhms, 30 mOhms | - 8 V, 8 V | 600 mV | 15 nC, 34 nC | - 55 C | + 150 C | 1.6 W, 1.7 W | Enhancement | TrenchFET | Reel | SI6562CDQ-GE3 | |||
Mfr: SI4840BDY-T1-GE3 TTI: SI4840BDY-T1-GE3 Vishay Semiconductors Availability: 30.000In StockMOSFETs 40V Vds 20V Vgs SO-8 | 30.000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 19 A | 9 mOhms | - 20 V, 20 V | 1 V | 50 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4840BDY-GE3 | |||
Mfr: SI3460DDV-T1-GE3 TTI: SI3460DDV-T1-GE3 Vishay Semiconductors Availability: 6.000In Stock12.000 On Order Expected MOSFETs 20V Vds 8V Vgs TSOP-6 | 6.000In Stock12.000 On Order Expected | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 20 V | 7.9 A | 28 mOhms | - 8 V, 8 V | 1 V | 18 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3460DDV-T1-BE3 SI3460DDV-GE3 | |||
Mfr: SI9407BDY-T1-GE3 TTI: SI9407BDY-T1-GE3 Vishay Semiconductors Availability: 2.500In StockMOSFETs -60V Vds 20V Vgs SO-8 | 2.500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.7 A | 120 mOhms | - 20 V, 20 V | 1 V | 14.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI9407BDY-GE3 | |||
Mfr: IRF9510PBF TTI: IRF9510PBF Vishay Semiconductors Availability: 1.350In StockMOSFETs P-CH SINGLE -100V TO220 | 1.350In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 4 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 8.7 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF9510PBF-BE3 | ||||
Mfr: SIS862DN-T1-GE3 TTI: SIS862DN-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 60V Vds 20V Vgs PowerPAK 1212-8 | 6.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 60 V | 40 A | 7 mOhms | - 20 V, 20 V | 1.5 V | 32 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR622DP-T1-RE3 TTI: SIR622DP-T1-RE3 Vishay / Siliconix Availability: 6.000In StockMOSFETs 150V Vds; 20V Vgs PowerPAK SO-8 | 6.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 51.6 A | 17.7 mOhms | - 20 V, 20 V | 2.5 V | 41 nC | - 55 C | + 150 C | 104 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: IRF840SPBF TTI: IRF840SPBF Vishay Semiconductors Availability: 50In StockMOSFETs N-CH SINGLE 500V TO263 | 50In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 20 V, 20 V | 2 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SI4162DY-T1-GE3 TTI: SI4162DY-T1-GE3 Vishay Semiconductors Availability: 35.000In StockMOSFETs 30V Vds 20V Vgs SO-8 | 35.000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 19.3 A | 7.9 mOhms | - 20 V, 20 V | 3 V | 20 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4162DY-GE3 | |||
Mfr: IRFP150PBF TTI: IRFP150PBF Vishay Semiconductors Availability: 175In StockMOSFETs N-CH SINGLE 100V TO247 | 175In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 41 A | 55 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 175 C | 230 W | Enhancement | Tube | |||||
Mfr: SI4403CDY-T1-GE3 TTI: SI4403CDY-T1-GE3 Vishay Semiconductors Availability: 22.500In StockMOSFETs 1.8V P-Channel | 22.500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 20 V | 13.4 A | 15.5 mOhms | - 8 V, 8 V | 400 mV | 60 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFBC30ASPBF TTI: IRFBC30ASPBF Vishay Semiconductors Availability: 500In StockMOSFETs N-Chan 600V 3.6 Amp | 500In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 3.6 A | 2.2 Ohms | - 30 V, 30 V | 2 V | 23 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | |||||
Mfr: SIR462DP-T1-GE3 TTI: SIR462DP-T1-GE3 Vishay Semiconductors Availability: 18.000In Stock15.000 On Order Expected 17-Dec-26 MOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 18.000In Stock15.000 On Order Expected 17-Dec-26 | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 30 A | 7.9 mOhms | - 20 V, 20 V | 1 V | 20 nC | - 55 C | + 150 C | 41.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR462DP-GE3 |
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