MOSFETs
16.468 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI4948BEY-T1-E3 TTI: SI4948BEY-T1-E3 Vishay Semiconductors Availability: 20.000In StockMOSFETs -60V Vds 20V Vgs SO-8 | 20.000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 60 V | 3.1 A | 120 mOhms | 20 V | 1 V | 22 nC | - 55 C | + 175 C | 2.4 W | Enhancement | TrenchFET | Reel | SI4948BEY-E3 | |||
Mfr: IRFBC40APBF TTI: IRFBC40APBF Vishay Semiconductors Availability: 300In StockMOSFETs N-CH SINGLE 600V TO220 | 300In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 30 V | 4 V | 42 nC | - 55 C | + 150 C | 96 W | Enhancement | Tube | IRFBC40APBF-BE3 | ||||
Mfr: IRFPG50PBF TTI: IRFPG50PBF Vishay Semiconductors Availability: 725In StockMOSFETs N-CH SINGLE 1KV TO247 | 725In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 6.1 A | 2 Ohms | 20 V | 2 V | 190 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: IRLL014TRPBF TTI: IRLL014TRPBF Vishay Semiconductors Availability: 12.500In StockMOSFETs N-Chan 60V 2.7 Amp | 12.500In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 60 V | 2.7 A | 200 mOhms | 10 V | 2 V | 8.4 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRLL014TRPBF-BE3 | ||||
Mfr: SI4160DY-T1-GE3 TTI: SI4160DY-T1-GE3 Vishay Semiconductors Availability: 2.500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 2.500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 25.4 A | 4.9 mOhms | 20 V | 1 V | 54 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4160DY-GE3 | |||
Mfr: SI4488DY-T1-GE3 TTI: SI4488DY-T1-GE3 Vishay Semiconductors Availability: 2.500In Stock5.000 On Order Expected 07-Nov-29 MOSFETs 150V Vds 20V Vgs SO-8 | 2.500In Stock5.000 On Order Expected 07-Nov-29 | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 5 A | 50 mOhms | 20 V | 2 V | 36 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4488DY-GE3 | |||
Mfr: SIR470DP-T1-GE3 TTI: SIR470DP-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 60 A | 1.9 mOhms | 20 V | 1 V | 155 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR814DP-T1-GE3 | |||
Mfr: SI7469DP-T1-GE3 TTI: SI7469DP-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -80V Vds 20V Vgs PowerPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 80 V | 28 A | 29 mOhms | 20 V | 3 V | 160 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7469DP-GE3 | |||
Mfr: IRF9640STRLPBF TTI: IRF9640STRLPBF Vishay Semiconductors Availability: 3.200In StockMOSFETs P-CH SINGLE -200V TO263 | 3.200In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: IRFU9120PBF TTI: IRFU9120PBF Vishay Semiconductors Availability: 1.500In StockMOSFETs P-Chan 100V 5.6 Amp | 1.500In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
Mfr: IRFR220TRPBF TTI: IRFR220TRPBF Vishay Semiconductors Availability: 2.000In StockMOSFETs N-Chan 200V 4.8 Amp | 2.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 4.8 A | 800 mOhms | 20 V | 2 V | 14 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: IRFR9214TRLPBF TTI: IRFR9214TRLPBF Vishay Semiconductors Availability: 6.000In StockMOSFETs P-CH SINGLE -250V TO252 | 6.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 250 V | 2.7 A | 3 Ohms | 20 V | 4 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | |||||
Mfr: SIR680LDP-T1-RE3 TTI: SIR680LDP-T1-RE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs N-Ch 80-V (D-S) | 3.000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 80 V | 130 A | 2.8 mOhms | 20 V | 2.5 V | 135 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4162DY-T1-GE3 TTI: SI4162DY-T1-GE3 Vishay Semiconductors Availability: 2.500In Stock2.500 On Order Expected 24-Mar-27 MOSFETs 30V Vds 20V Vgs SO-8 | 2.500In Stock2.500 On Order Expected 24-Mar-27 | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 19.3 A | 7.9 mOhms | 20 V | 3 V | 20 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4162DY-GE3 | |||
Mfr: IRFP150PBF TTI: IRFP150PBF Vishay Semiconductors Availability: 175In StockMOSFETs N-CH SINGLE 100V TO247 | 175In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 41 A | 55 mOhms | 20 V | 2 V | 140 nC | - 55 C | + 175 C | 230 W | Enhancement | Tube | |||||
Mfr: IRF840SPBF TTI: IRF840SPBF Vishay Semiconductors Availability: 50In StockMOSFETs N-CH SINGLE 500V TO263 | 50In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 20 V | 2 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SI4403CDY-T1-GE3 TTI: SI4403CDY-T1-GE3 Vishay Semiconductors Availability: 22.500In StockMOSFETs 1.8V P-Channel | 22.500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 20 V | 13.4 A | 15.5 mOhms | 8 V | 400 mV | 60 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFB9N60APBF TTI: IRFB9N60APBF Vishay Semiconductors Availability: 800In StockMOSFETs N-CH SINGLE 600V TO220 | 800In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 9.2 A | 750 mOhms | 30 V | 4 V | 49 nC | - 55 C | + 150 C | 170 W | Enhancement | Tube | IRFB9N60APBF-BE3 | ||||
Mfr: SIB441EDK-T1-GE3 TTI: SIB441EDK-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -12V Vds 8V Vgs PowerPAK SC-75 | 3.000In Stock | Si | SMD/SMT | SC-75-6 | P-Channel | 1 Channel | 12 V | 9 A | 21 mOhms | 8 V | 900 mV | 33 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
1.000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 5.2 A | 800 mOhms | 20 V | 4 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Tube | IRF620PBF-BE3 | |||||
Mfr: IRFP360PBF TTI: IRFP360PBF Vishay Semiconductors Availability: 1.500In StockMOSFETs N-CH SINGLE 400V TO247 | 1.500In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 400 V | 23 A | 200 mOhms | 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SI4134DY-T1-E3 TTI: SI4134DY-T1-E3 Vishay Semiconductors Availability: 2.500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 2.500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 14 A | 14 mOhms | 20 V | 1.2 V | 23 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4134DY-E3 | |||
300In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 500 V | 10 A | 1 Ohms | 20 V | 2 V | 50 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | |||||
Mfr: SI7137DP-T1-GE3 TTI: SI7137DP-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -20V Vds 12V Vgs PowerPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 1.95 mOhms | 12 V | 1.4 V | 390 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7137DP-GE3 | |||
Mfr: SIA459EDJ-T1-GE3 TTI: SIA459EDJ-T1-GE3 Vishay / Siliconix Availability: 27.000In Stock42.000 On Order Expected MOSFETs -20V Vds 12V Vgs PowerPAK SC-70 | 27.000In Stock42.000 On Order Expected | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 20 V | 9 A | 28 mOhms | 12 V | 1.2 V | 30 nC | - 50 C | + 150 C | 15.6 W | Enhancement | TrenchFET | Reel |