MOSFETs
15.910 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SUM70101EL-GE3 TTI: SUM70101EL-GE3 Vishay Semiconductors Availability: 800In StockMOSFETs -100V Vds 20V Vgs TO-263 | 800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 120 A | 10.1 mOhms | - 20 V, 20 V | 2.5 V | 125 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | |||||
Mfr: SI3424CDV-T1-GE3 TTI: SI3424CDV-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 3.000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 8 A | 26 mOhms | - 20 V, 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 3.6 W | Enhancement | TrenchFET | Reel | SI3424CDV-T1-BE3 | |||
Mfr: SI7137DP-T1-GE3 TTI: SI7137DP-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -20V Vds 12V Vgs PowerPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 1.95 mOhms | - 12 V, 12 V | 1.4 V | 390 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7137DP-GE3 | |||
Mfr: SUM90140E-GE3 TTI: SUM90140E-GE3 Vishay Semiconductors Availability: 1.600In StockMOSFETs 200V Vds 20V Vgs D2PAK (TO-263) | 1.600In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 90 A | 13.8 mOhms | - 20 V, 20 V | 2 V | 96 nC | - 55 C | + 175 C | 375 W | Enhancement | ThunderFET | Reel | ||||
Mfr: SUD19N20-90-E3 TTI: SUD19N20-90-E3 Vishay Semiconductors Availability: 8.000In StockMOSFETs N-CH SINGLE 200V TO-252 | 8.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 19 A | 90 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD19N20-90-BE3 | |||
Mfr: SIB441EDK-T1-GE3 TTI: SIB441EDK-T1-GE3 Vishay Semiconductors Availability: 3.000In StockMOSFETs -12V Vds 8V Vgs PowerPAK SC-75 | 3.000In Stock | Si | SMD/SMT | SC-75-6 | P-Channel | 1 Channel | 12 V | 9 A | 21 mOhms | - 8 V, 8 V | 900 mV | 33 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUM90220E-GE3 TTI: SUM90220E-GE3 Vishay Semiconductors Availability: 800In StockMOSFETs 200V Vds 20V Vgs TO-263 | 800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 64 A | 18 mOhms | - 20 V, 20 V | 2 V | 48 nC | - 55 C | + 175 C | 230 W | Enhancement | Reel | |||||
Mfr: SI9407BDY-T1-E3 TTI: SI9407BDY-T1-E3 Vishay Semiconductors Availability: 5.000In StockMOSFETs -60V Vds 20V Vgs SO-8 | 5.000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.7 A | 100 mOhms | - 20 V, 20 V | 1 V | 14.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI9407BDY-E3 | |||
300In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 500 V | 10 A | 1 Ohms | - 20 V, 20 V | 2 V | 50 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | |||||
Mfr: SI1062X-T1-GE3 TTI: SI1062X-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 20V Vds 8V Vgs SC89-3 | 6.000In Stock | Si | SMD/SMT | SC-89-3 | N-Channel | 1 Channel | 20 V | 530 mA | 420 mOhms | - 8 V, 8 V | 400 mV | 2.7 nC | - 55 C | + 150 C | 220 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SISS12DN-T1-GE3 TTI: SISS12DN-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 40V Vds 20V Vgs PowerPAK 1212-8S | 6.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 60 A | 1.98 mOhms | - 16 V, 20 V | 1.1 V | 89 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUM60020E-GE3 TTI: SUM60020E-GE3 Vishay / Siliconix Availability: 800In StockMOSFETs N-CH SINGLE 80V TO263 | 800In Stock | Si | SMD/SMT | TO-263-4 | N-Channel | 1 Channel | 80 V | 150 A | 2.47 mOhms | - 20 V, 20 V | 2 V | 151.2 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7252ADP-T1-GE3 TTI: SI7252ADP-T1-GE3 Vishay / Siliconix Availability: 3.000In StockMOSFETs N-CH DUAL 100V PPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 100 V | 28.7 A | 18.6 mOhms | - 20 V, 20 V | 4 V | 17.4 nC | - 55 C | + 150 C | 33.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFBG20PBF TTI: IRFBG20PBF Vishay Semiconductors Availability: 450In StockMOSFETs RECOMMENDED ALT IRFB | 450In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 1.4 A | 11 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | IRFBG20PBF-BE3 | ||||
Mfr: SI7101DN-T1-GE3 TTI: SI7101DN-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs -30V Vds 25V Vgs PowerPAK 1212-8 | 6.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 7.2 mOhms | - 25 V, 25 V | 2.5 V | 68 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7148DP-T1-E3 TTI: SI7148DP-T1-E3 Vishay Semiconductors Availability: 3.000In StockMOSFETs 75V Vds 20V Vgs PowerPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 75 V | 28 A | 11 mOhms | - 20 V, 20 V | 2.5 V | 68 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7148DP-E3 | |||
Mfr: IRF9630PBF TTI: IRF9630PBF Vishay Semiconductors Availability: 1.050In StockMOSFETs P-CH SINGLE -200V TO220 | 1.050In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 6.5 A | 800 mOhms | - 20 V, 20 V | 4 V | 29 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRF9630PBF-BE3 | ||||
Mfr: SI7850ADP-T1-GE3 TTI: SI7850ADP-T1-GE3 Vishay / Siliconix Availability: 9.000In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 9.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 12 A | 19.5 mOhms | - 20 V, 20 V | 2.8 V | 11.1 nC | - 55 C | + 150 C | 35.7 W | Enhancement | Reel | |||||
Mfr: SIHG30N60E-GE3 TTI: SIHG30N60E-GE3 Vishay / Siliconix Availability: 500In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 29 A | 125 mOhms | - 30 V, 30 V | 4 V | 85 nC | - 55 C | + 150 C | 250 W | Enhancement | Tube | |||||
Mfr: SIR4604LDP-T1-GE3 TTI: SIR4604LDP-T1-GE3 Vishay Availability: 6.000In StockMOSFETs N-CH SINGLE 60V PPAKSO8 | 6.000In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 51 A | 8.9 mOhms | - 20 V, 20 V | 3 V | 18.3 nC | - 55 C | + 150 C | 41.6 W | Enhancement | Reel | |||||
Mfr: SUM110P08-11L-E3 TTI: SUM110P08-11L-E3 Vishay / Siliconix Availability: 5.600In StockMOSFETs 80V 110A 375W | 5.600In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 80 V | 110 A | 11.2 mOhms | - 20 V, 20 V | 1 V | 180 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR624DP-T1-GE3 TTI: SIR624DP-T1-GE3 Vishay / Siliconix Availability: 3.000In StockMOSFETs 200V Vds 20V Vgs PowerPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 18.6 A | 50 mOhms | - 20 V, 20 V | 2 V | 30 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHB080N60E-GE3 TTI: SIHB080N60E-GE3 Vishay Semiconductors Availability: 1.000In StockMOSFETs N-CH SINGLE 650V TO263 | 1.000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 35 A | 80 mOhms | - 30 V, 30 V | 5 V | 63 nC | - 55 C | + 150 C | 227 W | Enhancement | Tube | |||||
Mfr: SIDR5102EP-T1-RE3 TTI: SIDR5102EP-T1-RE3 Vishay Availability: 3.000In StockMOSFETs N-CH SINGLE 100V PPAKSO8DC | 3.000In Stock | Si | 100 V | 8.9 A | 5.6 mOhms | - 20 V, 20 V | 4 V | 20 nC | - 55 C | + 175 C | 7.5 W | Reel | ||||||||||
Mfr: SIR836DP-T1-GE3 TTI: SIR836DP-T1-GE3 Vishay Semiconductors Availability: 27.000In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 27.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 21 A | 19 mOhms | - 20 V, 20 V | 1.2 V | 11.8 nC | - 55 C | + 150 C | 15.6 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR836DP-GE3 |
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