MOSFETs
15.925 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SUM110P08-11L-E3 TTI: SUM110P08-11L-E3 Vishay / Siliconix Availability: 5.600In StockMOSFETs 80V 110A 375W | 5.600In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 80 V | 110 A | 11.2 mOhms | - 20 V, 20 V | 1 V | 180 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR624DP-T1-GE3 TTI: SIR624DP-T1-GE3 Vishay / Siliconix Availability: 3.000In StockMOSFETs 200V Vds 20V Vgs PowerPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 18.6 A | 50 mOhms | - 20 V, 20 V | 2 V | 30 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIRS5700DP-T1-RE3 TTI: SIRS5700DP-T1-RE3 Vishay Availability: 6.000In StockMOSFETs N-CH 150V Vds 20Vgs 144A Rds .0062 | 6.000In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 150 V | 144 A | 5.6 mOhms | - 20 V, 20 V | 4 V | 73 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | |||||
Mfr: SIHR080N60E-T1-GE3 TTI: SIHR080N60E-T1-GE3 Vishay / Siliconix Availability: 6.000In StockMOSFETs N-CH SINGLE 600V PPK 8X8L | 6.000In Stock | Si | SMD/SMT | PowerPAK-8 | N-Channel | 1 Channel | 600 V | 51 A | 74 mOhms | - 30 V, 30 V | 5 V | 42 nC | - 55 C | + 150 C | 500 W | Enhancement | PowerPAK | Reel | ||||
Mfr: IRFBG20PBF TTI: IRFBG20PBF Vishay Semiconductors Availability: 450In StockMOSFETs RECOMMENDED ALT IRFB | 450In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 1.4 A | 11 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Tube | IRFBG20PBF-BE3 | ||||
Mfr: SUM60020E-GE3 TTI: SUM60020E-GE3 Vishay / Siliconix Availability: 800In StockMOSFETs N-CH SINGLE 80V TO263 | 800In Stock | Si | SMD/SMT | TO-263-4 | N-Channel | 1 Channel | 80 V | 150 A | 2.47 mOhms | - 20 V, 20 V | 2 V | 151.2 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SISS26LDN-T1-GE3 TTI: SISS26LDN-T1-GE3 Vishay / Siliconix Availability: 6.000In StockMOSFETs Nch 60V Vds 20V Vgs PowerPAK 1212-8S | 6.000In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 60 V | 81.2 A | 4.3 mOhms | - 20 V, 20 V | 1 V | 48 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI9407BDY-T1-GE3 TTI: SI9407BDY-T1-GE3 Vishay Semiconductors Availability: 2.500In StockMOSFETs -60V Vds 20V Vgs SO-8 | 2.500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 60 V | 4.7 A | 120 mOhms | - 20 V, 20 V | 1 V | 14.5 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI9407BDY-GE3 | |||
Mfr: SISS12DN-T1-GE3 TTI: SISS12DN-T1-GE3 Vishay Semiconductors Availability: 6.000In StockMOSFETs 40V Vds 20V Vgs PowerPAK 1212-8S | 6.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 60 A | 1.98 mOhms | - 16 V, 20 V | 1.1 V | 89 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISH892BDN-T1-GE3 TTI: SISH892BDN-T1-GE3 Vishay / Siliconix Availability: 9.000In StockMOSFETs N-CH SINGLE 100V PPAK1212-8SH | 9.000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 20 A | 30.4 mOhms | - 20 V, 20 V | 2.4 V | 17.4 nC | - 55 C | + 150 C | 29 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7252ADP-T1-GE3 TTI: SI7252ADP-T1-GE3 Vishay / Siliconix Availability: 3.000In StockMOSFETs N-CH DUAL 100V PPAK SO-8 | 3.000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 100 V | 28.7 A | 18.6 mOhms | - 20 V, 20 V | 4 V | 17.4 nC | - 55 C | + 150 C | 33.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SQ2361CEES-T1/GE3 TTI: SQ2361CEES-T1/GE3 Vishay Availability: 9.000In StockMOSFETs P-CH SINGLE -60V SOT-23 AECQ | 9.000In Stock | Si | Reel | |||||||||||||||||||
Mfr: SSM3K341R,LF(T TTI: SSM3K341R,LF(T Toshiba Availability: 18.000In StockMOSFETs N-CH SINGLE 60V SOT23F | 18.000In Stock | Reel | ||||||||||||||||||||
Mfr: SSM3J356R,LF(T TTI: SSM3J356RLF(T Toshiba Availability: 3.000In StockMOSFETs P-CH SINGLE -60V SOT23F | 3.000In Stock | Reel | ||||||||||||||||||||
Mfr: SSM3J332R,LF(T TTI: SSM3J332RLF(T Toshiba Availability: 21.000In StockMOSFETs P-CH SINGLE -30V SOT23F | 21.000In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 30 V | 6 A | 42 mOhms | - 12 V, 12 V | 500 mV | 8.2 nC | + 150 C | 1 W | Enhancement | Reel | ||||||
Mfr: SSM3J356R,LF(T TTI: SSM3J356R,LF(T Toshiba Availability: 3.000In StockMOSFETs P-CH SINGLE -60V SOT23F | 3.000In Stock | Reel | ||||||||||||||||||||
Mfr: PJA3441-R1-00001 TTI: PJA3441-R1-00001 Panjit Availability: 30.000In StockMOSFETs P-CH SINGLE -40V SOT23 | 30.000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 40 V | 3.1 A | 88 mOhms | - 20 V, 20 V | 2.5 V | 6 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | |||||
Mfr: 2N7002K-R1-00001 TTI: 2N7002K-R1-00001 Panjit Availability: 24.000In Stock153.000 On Order Expected 25-Jan-27 MOSFETs N-CH SINGLE 60V TO236 | 24.000In Stock153.000 On Order Expected 25-Jan-27 | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 300 mA | 3 Ohms | - 20 V, 20 V | 2.5 V | 800 pC | - 55 C | + 150 C | 350 mW | Enhancement | Reel | |||||
Mfr: SSM3K341R,LF(T TTI: SSM3K341RLF(T Toshiba Availability: 18.000In StockMOSFETs N-CH SINGLE 60V SOT23F | 18.000In Stock | Reel | ||||||||||||||||||||
Mfr: SSM3J332R,LF(T TTI: SSM3J332R,LF(T Toshiba Availability: 21.000In StockMOSFETs P-CH SINGLE -30V SOT23F | 21.000In Stock | Si | SMD/SMT | SOT-23F-3 | P-Channel | 1 Channel | 30 V | 6 A | 42 mOhms | - 12 V, 12 V | 500 mV | 8.2 nC | + 150 C | 1 W | Enhancement | Reel | ||||||
Mfr: 2N7002KW-R1-00001 TTI: 2N7002KW-R1-00001 Panjit Availability: 42.000In StockMOSFETs N-CH SINGLE 60V SOT323 | 42.000In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 60 V | 115 mA | 3 Ohms | - 20 V, 20 V | 2.5 V | 800 pC | - 55 C | + 150 C | 200 mW | Enhancement | Reel | |||||
Mfr: SQ2309CES-T1/GE3 TTI: SQ2309CES-T1/GE3 Vishay Availability: 12.000In StockMOSFETs P-CH SINGLE -60V TO236 | 12.000In Stock | Si | Reel | |||||||||||||||||||
Mfr: SSM3K376R,LF(T TTI: SSM3K376RLF(T Toshiba Availability: 15.000In StockMOSFETs N-CH SINGLE 30V SOT23F | 15.000In Stock | Reel | ||||||||||||||||||||
Mfr: SQD19P06-60L/GE3 TTI: SQD19P06-60L/GE3 Vishay / Siliconix Availability: 6.000In StockMOSFETs P-CH SINGLE -60V DPAK AECQ | 6.000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | TrenchFET | Reel | ||||||||||||||||
Mfr: PJA3461-AU-R1-000A1 TTI: PJA3461-AU-R1-000A1 Panjit Availability: 63.000In StockMOSFETs P-CH SINGLE -60V SOT23 | 63.000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 60 V | 1.9 A | 220 mOhms | - 20 V, 20 V | 2.5 V | 8.3 nC | - 55 C | + 150 C | 1.25 W | Enhancement | AEC-Q101 | Reel |
