MT3S113TU - RF Bipolar Transistors
1 ResultsPart | Availability | Purchasing | RoHS/Lead | Series | Transistor Type | Technology | Transistor Polarity | Operating Frequency | DC Collector/Base Gain hfe Min | Collector- Emitter Voltage VCEO Max | Emitter- Base Voltage VEBO | Continuous Collector Current | Minimum Operating Temperature | Maximum Operating Temperature | Configuration | Mounting Style | Package / Case | Qualification | Packaging |
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Mfr: MT3S113TU,LF TTI: Not Assigned Toshiba Availability: 0In StockRF Bipolar Transistors RF Bipolar Transistor .1A 900mW | 0In Stock | MT3S113TU | Bipolar | SiGe | NPN | 11.2 GHz | 200 | 5.3 V | 600 mV | 100 mA | + 150 C | Single | SMD/SMT | UFM-3 | Reel |