SiC MOSFETs
160 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename |
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0In Stock | IXYS | SMD/SMT | TOLL-8 | N-Channel | 1 Channel | 650 V | 43 A | 78 mOhms | - 5 V, 20 V | 4.5 V | 64 nC | - 55 C | + 175 C | 174 W | Enhancement | |||||
Mfr: IXSA65N120L2-7TR TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO-263-7L | 0In Stock | IXYS | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1.2 kV | 65 A | 53 mOhms | - 5 V, + 20 V | 4.5 V | 110 nC | - 55 C | + 175 C | 417 W | Enhancement | ||||
Mfr: MXP120A063SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247AD-4 | N-Channel | 1 Channel | 1.2 kV | 39 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 61 nC | - 55 C | + 175 C | 205 W | Enhancement | ||||
Mfr: MXPQ120A045SE-1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 52 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 82 nC | - 55 C | + 175 C | 268 W | Enhancement | ||||
0In Stock | Vishay | Through Hole | TO-247AD-4L | N-Channel | 1 Channel | 750 V | 51 A | 50 mOhms | - 10 V, + 22 V | 2.65 V | 77 nC | - 55 C | + 175 C | 208 W | Enhancement | |||||
Mfr: MXP120A063SE-T1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 41 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 58 nC | - 55 C | + 175 C | 221 W | Enhancement | ||||
Mfr: LSIC1MO170T0750 TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1700V 750MOHM SIC MOSF TO-263 | 0In Stock | IXYS | SMD/SMT | D2PAK-7 (TO-263-7) | N-Channel | 1 Channel | 1.7 kV | 6.4 A | 750 mOhms | - 20 V, + 20 V | 1.8 V | 11 nC | - 55 C | + 175 C | 65 W | Enhancement | ||||
Mfr: TW045Z120C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 45mohm | 0In Stock | Toshiba | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 40 A | 45 mOhms | - 10 V, + 25 V | 5 V | 57 nC | + 175 C | 182 W | Enhancement | |||||
Image Not Available Mfr: TW054V65C,LQ TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs N-ch SiC MOSFET, 650 V, 0.054 Ohma.18 V, DFN 8 x 8, 3rd Gen. | 0In Stock | Toshiba | SMD/SMT | DFN-5 | N-Channel | 1 Channel | 650 V | 36 A | 81 mOhms | - 10 V, 25 V | 5 V | 41 nC | + 175 C | 132 W | Enhancement | |||||
Mfr: TW140Z120C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 140mohm | 0In Stock | Toshiba | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 20 A | 140 mOhms | - 10 V, + 25 V | 5 V | 24 nC | + 175 C | 107 W | Enhancement | |||||
Image Not Available Mfr: TW092V65C,LQ TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs N-ch SiC MOSFET, 650 V, 0.092 Ohma.18 V, DFN 8 x 8, 3rd Gen. | 0In Stock | Toshiba | SMD/SMT | DFN-5 | N-Channel | 1 Channel | 650 V | 27 A | 136 mOhms | - 10 V, 25 V | 5 V | 28 nC | + 175 C | 111 W | Enhancement | |||||
Image Not Available Mfr: TW031V65C,LQ TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs N-ch SiC MOSFET, 650 V, 0.031 Ohma.18 V, DFN 8 x 8, 3rd Gen. | 0In Stock | Toshiba | SMD/SMT | DFN-5 | N-Channel | 1 Channel | 650 V | 53 A | 45 mOhms | - 10 V, 25 V | 5 V | 65 nC | + 175 C | 156 W | Enhancement | |||||
Mfr: IXSA110N65L2-7TR TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TO263-7L | 0In Stock | IXYS | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 650 V | 111 A | 33 mOhms | - 5 V, + 20 V | 4.5 V | 125 nC | - 55 C | + 175 C | 600 W | Enhancement | ||||
Mfr: TW015N65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247 15mohm | 0In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 100 A | 21 mOhms | - 10 V, + 25 V | 5 V | 128 nC | - 55 C | + 175 C | 342 W | Enhancement | ||||
Mfr: IXSJ80N120R1K TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 36mOhm (43A at 25C) SiC MOSFET in isolated TO247-4L | 0In Stock | IXYS | Through Hole | ISO247-4 | N-Channel | 1 Channel | 1.2 kV | 85 A | 23.4 mOhms | 21 V | 4.8 V | 155 nC | - 40 C | + 150 C | 223.2 W | Enhancement | ||||
0In Stock | Vishay | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1200 V | 12 A | 313 mOhms | - 10 V, + 22 V | 3 V | 15 nC | - 55 C | + 175 C | 85 W | Enhancement | |||||
0In Stock | Vishay | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1200 V | 32 A | 100 mOhms | - 10 V, + 22 V | 2.9 V | 47 nC | - 55 C | + 175 C | 185 W | Enhancement | |||||
Mfr: TW015N120C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247 15mohm | 0In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 100 A | 182 mOhms | - 10 V, + 25 V | 5 V | 158 nC | - 55 C | + 175 C | 431 W | Enhancement | ||||
Mfr: TW060Z120C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 60mohm | 0In Stock | Toshiba | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 36 A | 60 mOhms | - 10 V, + 25 V | 5 V | 46 nC | + 175 C | 170 W | Enhancement | |||||
Mfr: MXP120A080SE-T1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 32 A | 100 mOhms | - 10 V, 22 V | 2.9 V | 47 nC | - 55 C | + 175 C | 185 W | Enhancement | ||||
0In Stock | Vishay | Through Hole | TO-247AD-3L | N-Channel | 1 Channel | 1200 V | 53 A | 54 mOhms | - 10 V, + 22 V | 2.9 V | 69 nC | - 55 C | + 175 C | 288 W | Enhancement | |||||
Mfr: TW048N65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247 48mohm | 0In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 40 A | 65 mOhms | - 10 V, + 25 V | 5 V | 41 nC | - 55 C | + 175 C | 132 W | Enhancement | ||||
Mfr: TW060N120C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247 60mohm | 0In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 36 A | 182 mOhms | - 10 V, + 25 V | 5 V | 46 nC | - 55 C | + 175 C | 170 W | Enhancement | ||||
Mfr: TW083Z65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 83mohm | 0In Stock | Toshiba | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 30 A | 83 mOhms | - 10 V, + 25 V | 5 V | 28 nC | + 175 C | 111 W | Enhancement | |||||
0In Stock | IXYS | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 20 A | 208 mOhms | - 5 V, 20 V | 4.5 V | 29 nC | - 55 C | + 175 C | 136 W | Enhancement |
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