SiC MOSFETs
166 ResultsPart | Availability | Purchasing | RoHS/Lead | Mounting Style | Package / Case | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: LSIC1MO170T0750 TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1700V 750MOHM SIC MOSF TO-263 | 0In Stock | SMD/SMT | D2PAK-7 (TO-263-7) | 1 Channel | 1.7 kV | 6.4 A | 750 mOhms | - 20 V, + 20 V | 1.8 V | 11 nC | - 55 C | + 175 C | 65 W | Enhancement | ||||
Mfr: TW015N65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247 15mohm | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 650 V | 100 A | 21 mOhms | - 10 V, + 25 V | 5 V | 128 nC | - 55 C | + 175 C | 342 W | Enhancement | ||||
Mfr: TW140Z120C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 140mohm | 0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 20 A | 140 mOhms | - 10 V, + 25 V | 5 V | 24 nC | + 175 C | 107 W | Enhancement | |||||
Mfr: TW045Z120C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 45mohm | 0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 40 A | 45 mOhms | - 10 V, + 25 V | 5 V | 57 nC | + 175 C | 182 W | Enhancement | |||||
0In Stock | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 39 A | 80 mOhms | - 5 V, + 20 V | 2.8 V | 95 nC | - 55 C | + 150 C | 179 W | Enhancement | |||||
0In Stock | Through Hole | TO-247AD-4L | 1 Channel | 750 V | 51 A | 50 mOhms | - 10 V, + 22 V | 2.65 V | 77 nC | - 55 C | + 175 C | 208 W | Enhancement | |||||
Mfr: MXP120A063SE-T1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 41 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 58 nC | - 55 C | + 175 C | 221 W | Enhancement | ||||
0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 650 V | 43 A | 78 mOhms | - 5 V, 20 V | 4.5 V | 64 nC | - 55 C | + 175 C | 174 W | Enhancement | |||||
Mfr: TW107N65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247 107mohm | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 650 V | 20 A | 113 mOhms | - 10 V, + 25 V | 5 V | 28 nC | - 55 C | + 175 C | 111 W | Enhancement | ||||
0In Stock | Through Hole | TO-247-4L | 1 Channel | 1.2 kV | 67 A | 46 mOhms | - 5 V, + 20 V | 4 V | 83 nC | - 55 C | + 175 C | 288 W | Enhancement | |||||
0In Stock | SMD/SMT | TOLL-8 | 1 Channel | 650 V | 43 A | 78 mOhms | - 5 V, 20 V | 4.5 V | 64 nC | - 55 C | + 175 C | 174 W | Enhancement | |||||
Mfr: IXSA65N120L2-7TR TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO-263-7L | 0In Stock | SMD/SMT | TO-263-7L | 1 Channel | 1.2 kV | 65 A | 53 mOhms | - 5 V, + 20 V | 4.5 V | 110 nC | - 55 C | + 175 C | 417 W | Enhancement | ||||
Mfr: TW015Z120C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 15mohm | 0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 100 A | 15 mOhms | - 10 V, + 25 V | 5 V | 158 nC | + 175 C | 431 W | Enhancement | |||||
Mfr: TW015Z65C,S1F TTI: Not Assigned Toshiba Availability: Not Available OnlineSiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 15mohm | Not Available Online | Through Hole | TO-247-4 | 1 Channel | 650 V | 100 A | 15 mOhms | - 10 V, + 25 V | 5 V | 128 nC | + 175 C | 342 W | Enhancement | |||||
Mfr: TW030Z120C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 30mohm | 0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 60 A | 30 mOhms | - 10 V, + 25 V | 5 V | 82 nC | + 175 C | 249 W | Enhancement | |||||
Mfr: MXP120A063SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Through Hole | TO-247AD-4 | 1 Channel | 1.2 kV | 39 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 61 nC | - 55 C | + 175 C | 205 W | Enhancement | ||||
Mfr: MXPQ120A045SE-1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 52 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 82 nC | - 55 C | + 175 C | 268 W | Enhancement | ||||
Mfr: TW045N120C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247 45mohm | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 40 A | 182 mOhms | - 10 V, + 25 V | 5 V | 57 nC | - 55 C | + 175 C | 182 W | Enhancement | ||||
0In Stock | SMD/SMT | HiPerFET | ||||||||||||||||
Mfr: TW048Z65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 48mohm | 0In Stock | Through Hole | TO-247-4 | 1 Channel | 650 V | 40 A | 48 mOhms | - 10 V, + 25 V | 5 V | 41 nC | + 175 C | 132 W | Enhancement | |||||
Mfr: TW083Z65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 83mohm | 0In Stock | Through Hole | TO-247-4 | 1 Channel | 650 V | 30 A | 83 mOhms | - 10 V, + 25 V | 5 V | 28 nC | + 175 C | 111 W | Enhancement | |||||
0In Stock | Through Hole | TO-247AD-4L | 1 Channel | 750 V | 51 A | 50 mOhms | - 10 V, + 22 V | 2.65 V | 77 nC | - 55 C | + 175 C | 208 W | Enhancement | |||||
0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 20 A | 208 mOhms | - 5 V, 20 V | 4.5 V | 29 nC | - 55 C | + 175 C | 136 W | Enhancement | |||||
Mfr: IXSG110N65L2K TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TOLL | 0In Stock | SMD/SMT | TOLL-8 | 1 Channel | 650 V | 111 A | 33 mOhms | - 5 V, + 20 V | 4.5 V | 125 nC | - 55 C | + 175 C | 600 W | Enhancement | ||||
Mfr: TW140N120C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247 140mohm | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 20 A | 182 mOhms | - 10 V, + 25 V | 5 V | 24 nC | - 55 C | + 175 C | 107 W | Enhancement |
