SiC MOSFETs
160 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename |
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Mfr: TW083N65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247 83mohm | 0In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 20 A | 145 mOhms | - 10 V, + 25 V | 5 V | 21 nC | - 55 C | + 175 C | 76 W | Enhancement | ||||
0In Stock | Vishay | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1200 V | 41 A | 79 mOhms | - 10 V, + 22 V | 2.9 V | 58 nC | - 55 C | + 175 C | 221 W | Enhancement | |||||
Mfr: TW027Z65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 27mohm | 0In Stock | Toshiba | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 58 A | 27 mOhms | - 10 V, + 25 V | 5 V | 65 nC | + 175 C | 156 W | Enhancement | |||||
Mfr: IXSH100N65L2KHV TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 650V 25mohm (100A a. 25C) SiC MOSFET in TO247-4L | 0In Stock | IXYS | Through Hole | TO-247-4L | N-Channel | 1 Channel | 650 V | 99 A | 33 mOhms | - 5 V, + 20 V | 4.5 V | 125 nC | - 55 C | + 175 C | 454 W | Enhancement | ||||
Mfr: TW107Z65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 107mohm | 0In Stock | Toshiba | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 20 A | 107 mOhms | - 10 V, + 25 V | 5 V | 21 nC | + 175 C | 76 W | Enhancement | |||||
Mfr: IXSH65N120L2KHV TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO247-4L | 0In Stock | IXYS | Through Hole | TO-247-4L | N-Channel | 1 Channel | 1.2 kV | 65 A | 52 mOhms | - 5 V, + 20 V | 4.5 V | 110 nC | - 55 C | + 175 C | 375 W | Enhancement | ||||
Mfr: MXPQ120A080SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247AD-4 | N-Channel | 1 Channel | 1.2 kV | 39 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 61 nC | - 55 C | + 175 C | 205 W | Enhancement | ||||
0In Stock | Vishay | Through Hole | TO-247AD-3L | N-Channel | 1 Channel | 1200 V | 53 A | 54 mOhms | - 10 V, + 22 V | 2.9 V | 69 nC | - 55 C | + 175 C | 288 W | Enhancement | |||||
0In Stock | Vishay | Through Hole | TO-247AD-4L | N-Channel | 1 Channel | 1200 V | 18 A | 200 mOhms | - 10 V, + 22 V | 3.1 V | 25 nC | - 55 C | + 175 C | 109 W | Enhancement | |||||
Mfr: TW015N120C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247 15mohm | 0In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 100 A | 182 mOhms | - 10 V, + 25 V | 5 V | 158 nC | - 55 C | + 175 C | 431 W | Enhancement | ||||
Mfr: TW060Z120C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 60mohm | 0In Stock | Toshiba | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 36 A | 60 mOhms | - 10 V, + 25 V | 5 V | 46 nC | + 175 C | 170 W | Enhancement | |||||
Mfr: MXP120A080SE-T1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 32 A | 100 mOhms | - 10 V, 22 V | 2.9 V | 47 nC | - 55 C | + 175 C | 185 W | Enhancement | ||||
0In Stock | Vishay | Through Hole | TO-247AD-3L | N-Channel | 1 Channel | 1200 V | 53 A | 54 mOhms | - 10 V, + 22 V | 2.9 V | 69 nC | - 55 C | + 175 C | 288 W | Enhancement | |||||
Mfr: TW048N65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247 48mohm | 0In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 40 A | 65 mOhms | - 10 V, + 25 V | 5 V | 41 nC | - 55 C | + 175 C | 132 W | Enhancement | ||||
Mfr: TW060N120C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247 60mohm | 0In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 36 A | 182 mOhms | - 10 V, + 25 V | 5 V | 46 nC | - 55 C | + 175 C | 170 W | Enhancement | ||||
Mfr: TW083Z65C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 83mohm | 0In Stock | Toshiba | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 30 A | 83 mOhms | - 10 V, + 25 V | 5 V | 28 nC | + 175 C | 111 W | Enhancement | |||||
0In Stock | IXYS | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 20 A | 208 mOhms | - 5 V, 20 V | 4.5 V | 29 nC | - 55 C | + 175 C | 136 W | Enhancement | |||||
Mfr: IXSG110N65L2K TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TOLL | 0In Stock | IXYS | SMD/SMT | TOLL-8 | N-Channel | 1 Channel | 650 V | 111 A | 33 mOhms | - 5 V, + 20 V | 4.5 V | 125 nC | - 55 C | + 175 C | 600 W | Enhancement | ||||
0In Stock | Vishay | Through Hole | TO-247AD-4L | N-Channel | 1 Channel | 750 V | 51 A | 50 mOhms | - 10 V, + 22 V | 2.65 V | 77 nC | - 55 C | + 175 C | 208 W | Enhancement | |||||
Mfr: TW140N120C,S1F TTI: Not Assigned Toshiba Availability: 0In StockSiC MOSFETs G3 1200V SiC-MOSFET TO-247 140mohm | 0In Stock | Toshiba | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 20 A | 182 mOhms | - 10 V, + 25 V | 5 V | 24 nC | - 55 C | + 175 C | 107 W | Enhancement | ||||
Mfr: MCL10P1200LB-TRR TTI: MCL10P1200LB-TRR Littelfuse Availability: 0In StockSiC MOSFETs SIC MOSFET PHASE LEG SMPD-B | 0In Stock | Littelfuse | SMD/SMT | SMPD-B | 1.2 kV | 100 uA | 160 mOhms | - 20 V, + 20 V | 4 V | 50 nC | - 55 C | + 150 C | ||||||||
0In Stock | IXYS | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 70 A | 50 mOhms | - 5 V, + 20 V | 4 V | 175 nC | - 55 C | + 175 C | 357 W | Enhancement | |||||
0In Stock | Toshiba | |||||||||||||||||||
Mfr: LSIC1MO120E0120 TTI: Not Assigned IXYS Availability: Not Available OnlineSiC MOSFETs 1200 V 120 mOhm SiC Mosfet | Not Available Online | IXYS | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 27 A | 150 mOhms | - 5 V, + 20 V | 1.8 V | 80 nC | - 55 C | + 150 C | 139 W | Enhancement | ||||
Mfr: LSIC1MO120G0080 TTI: Not Assigned IXYS Availability: Not Available OnlineSiC MOSFETs 1200V 25MOHM SIC MOSF TO247-4L | Not Available Online | IXYS | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 39 A | 100 mOhms | - 5 V, + 20 V | 4 V | 92 nC | - 55 C | + 175 C | 214 W | Enhancement |
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