YAGEO - MOSFETs
660 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | Si | SMD/SMT | SOT-26-6 | N-Channel | 2 Channel | 30 V | 3.3 A | 72 mOhms | 20 V | 3 V | 5.1 nC | - 55 C | + 150 C | 1.2 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 30 V | 183 A | 2.1 mOhms | 20 V | 3 V | 113.6 nC | - 55 C | + 175 C | 2.4 W | Enhancement | Reel | |||||
Not Available Online | Si | SMD/SMT | SOT-26-6 | N-Channel | 2 Channel | 50 V | 520 mA | 1.8 Ohms | 20 V | 3 V | 1.6 nC | - 55 C | + 150 C | 800 mW | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | TO-252-4 | N-Channel, P-Channel | 2 Channel | 30 V, 30 V | 3.2 A, 3.2 A | 10 mOhms, 22 mOhms | 20 V | 3 V, 3 V | 16 nC, 20.8 nC | - 55 C | + 150 C | 3.13 W | Enhancement | Reel | |||||
Not Available Online | Si | SMD/SMT | PMPAK-8 | N-Channel | 2 Channel | 30 V | 13.2 A, 22.7 A | 5 mOhms, 11.5 mOhms | 20 V | 3 V | 16 nC, 32 nC | - 55 C | + 150 C | 3.13 W, 3.9 W | Enhancement | ||||||
Mfr: XP3NA2R8CMT TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH SINGLE 30V PMPAK5X6 | Not Available Online | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 33.7 A | 2.8 mOhms | 20 V | 2.3 V | 52.8 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||
Not Available Online | Si | SMD/SMT | SO-8 | N-Channel, P-Channel | 2 Channel | 30 V, 30 V | 3.2 A, 3.2 A | 135 mOhms, 155 mOhms | 20 V | 3 V, 3 V | 17.6 nC, 49.6 nC | - 55 C | + 150 C | 2 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | SO-8 | N-Channel, P-Channel | 2 Channel | 100 V, 100 V | 3.2 A, 3.2 A | 28 mOhms, 42 mOhms | 20 V | 3 V, 3 V | 13 nC, 24 nC | - 55 C | + 150 C | 2 W | Enhancement | ||||||
Mfr: XP6NA3R3LMT TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH SINGLE 60V PMPAK5X6 | Not Available Online | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 60 V | 32 A | 3.3 mOhms | 20 V | 3 V | 109 nC | - 55 C | + 150 C | 6 W | Enhancement | Reel | ||||
Not Available Online | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 30 V | 60 A | 9 mOhms | 20 V | 3 V | 27 nC | - 55 C | + 175 C | 53 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | TO-252-3 | P-Channel | 1 Channel | 200 V | 8 A | 680 mOhms | 20 V | 4 V | 56 nC | - 55 C | + 150 C | 96 W | Enhancement | ||||||
Mfr: XP93T03AGH TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH SINGLE 30V TO252 | Not Available Online | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 30 V | 75 A | 4.8 mOhms | 20 V | 3 V | 30.4 nC | - 55 C | + 150 C | 2 W | Enhancement | |||||
Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 80 A | 4 mOhms | 20 V | 3 V | 40 nC | - 55 C | + 175 C | 187 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | SO-8 | N-Channel | 2 Channel | 60 V | 5 A | 50 mOhms | 25 V | 3 V | 28 nC | - 55 C | + 150 C | 2 W | Enhancement | ||||||
Not Available Online | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 60 V | 23 A | 36 mOhms | 20 V | 3 V | 30 nC | - 55 C | + 150 C | 31.3 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | SO-8 | N-Channel | 2 Channel | 60 V | 3.9 A | 80 mOhms | 20 V | 3 V | 13 nC | - 55 C | + 150 C | 2 W | Enhancement | ||||||
Not Available Online | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 60 V | 68 A | 12 mOhms | 20 V | 3 V | 53 nC | - 55 C | + 150 C | 104 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | SO-8 | N-Channel | 2 Channel | 60 V | 3.3 A | 100 mOhms | 25 V | 3 V | 10 nC | - 55 C | + 150 C | 2 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | SO-8 | P-Channel | 2 Channel | 30 V | 7.7 A | 24 mOhms | 20 V | 3 V | 45 nC | - 55 C | + 150 C | 2 W | Enhancement | ||||||
Not Available Online | Si | SMD/SMT | SO-8 | N-Channel, P-Channel | 2 Channel | 100 V, 100 V | 2.5 A, 2.5 A | 150 mOhms, 160 mOhms | 20 V | 3 V, 3 V | 10 nC, 22.5 nC | - 55 C | + 150 C | 2 W | Enhancement | ||||||
Mfr: XP60SC180DP TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH SINGLE 600V TO220 | Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 20 A | 180 mOhms | 20 V | 4.5 V | 56 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | ||||
Mfr: XP65SA190DR TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH SINGLE 650V TO262 | Not Available Online | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 650 V | 20 A | 190 mOhms | 20 V | 4 V | 68.8 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | ||||
Mfr: XP65SA430ADR TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH SINGLE 650V TO262 | Not Available Online | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 650 V | 10 A | 438 mOhms | 20 V | 5 V | 36 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | ||||
Mfr: XP65SC210DDT8 TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH SINGLE 650V PDFN8X8 HV | Not Available Online | Si | SMD/SMT | PDFN-5 | N-Channel | 1 Channel | 650 V | 19 A | 210 mOhms | 20 V | 4.5 V | 56 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||
Not Available Online | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 900 V | 1.9 A | 7.2 Ohms | 30 V | 4 V | 20 nC | - 55 C | + 150 C | 34.7 W | Enhancement |