YAGEO - MOSFETs
660 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 165 A | 1.89 mOhms | 20 V | 3 V | 38 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Not Available Online | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 120 A | 2.25 mOhms | 20 V | 3 V | 33 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
Not Available Online | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 30 V | 5.5 mOhms | 20 V | 3 V | 16 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | ||||||
Mfr: XP60SL115DR TTI: Not Assigned YAGEO XSemi Availability: Not Available OnlineMOSFETs N-CH 600V 28A TO-262 | Not Available Online | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 600 V | 28 A | 115 mOhms | 20 V | 5 V | 91 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | ||||
0In Stock | Si | Reel | |||||||||||||||||||
Mfr: XP6NA6R0CMT-L TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-CH SINGLE 60V PMPAK5X6L | 0In Stock | Si | Tube | ||||||||||||||||||
0In Stock | Si | SMD/SMT | TOLL-9 | N-Channel | 1 Channel | 100 V | 247 A | 2 mOhms | 20 V | 4 V | 217.6 nC | - 55 C | + 175 C | 3.75 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 120 V | 60 A | 12 mOhms | 20 V | 4.5 V | 72 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 600 V | 22 A | 115 mOhms | 20 V | 4 V | 93 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 600 V | 21 A | 160 mOhms | 20 V | 4 V | 72 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 20 A | 180 mOhms | 20 V | 5 V | 67.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
Mfr: XP60SA290DI TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 600V 13.3A 290mOhms | 0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 600 V | 13.3 A | 290 mOhms | 20 V | 5 V | 48 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | ||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 600 V | 10 A | 380 mOhms | 20 V | 5 V | 36 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 40 V | 37.5 A | 2.1 mOhms | 20 V | 4 V | 179 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 600 V | 20 A | 160 mOhms | 20 V | 5 V | 94.4 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
Mfr: XP65SA145DDT8 TTI: Not Assigned YAGEO XSemi Availability: 0In StockMOSFETs N-MOS 650V 24.8A 145mOhms | 0In Stock | Si | SMD/SMT | PDFN-5 | N-Channel | 1 Channel | 650 V | 24.8 A | 145 mOhms | 20 V | 4 V | 110 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | ||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 40 V | 75 A | 3.2 mOhms | 20 V | 4 V | 145.6 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 45 V | 43 A | 1.8 mOhms | 20 V | 3 V | 75.2 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PMPAK-8 | N-Channel | 1 Channel | 100 V | 30 A | 3 mOhms | 20 V | 4 V | 160 nC | - 55 C | + 150 C | 5 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 40 V | 88 A | 2.4 mOhms | 20 V | 3 V | 147.2 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 40 V | 45 A | 16 mOhms | 20 V | 3 V | 51.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-220CFM-3 | N-Channel | 1 Channel | 650 V | 7 A | 600 mOhms | 20 V | 5 V | 35.2 nC | - 55 C | + 150 C | 1.92 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 60 V | 100 A | 3.1 mOhms | 20 V | 3 V | 165 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 130 A | 3.58 mOhms | 20 V | 5 V | 128 nC | - 55 C | + 150 C | 2 W | Enhancement | Tube | |||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 30 V | 75 A | 4 mOhms | 20 V | 3 V | 44.8 nC | - 55 C | + 150 C | 1.13 W | Enhancement | Tube |