Part | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TTI: SIHH26N60EF-T1-GE3 Mfr: SIHH26N60EF-T1-GE3 Vishay / Siliconix Availability: 0 MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 | 0 | Si | SMD/SMT | PowerPAK-8x8-4 | N-Channel | 1 Channel | 600 V | 25 A | 117 mOhms | - 30 V, + 30 V | 4 V | 77 nC | - 55 C | + 150 C | 202 W | Enhancement | Reel | ||||
TTI: SIHH26N60E-T1-GE3 Mfr: SIHH26N60E-T1-GE3 Vishay / Siliconix Availability: 0 MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 | 0 | Si | SMD/SMT | PowerPAK-4 | N-Channel | 1 Channel | 600 V | 25 A | 117 mOhms | - 30 V, + 30 V | 4 V | 77 nC | - 55 C | + 150 C | 202 W | Enhancement | Reel |