Reference Only

IXBT2N250

IGBTs DISC IGBT 2500V TO268AA

Manufacturer:

Mfr Part:
IXBT2N250

TTI Part:
IXBT2N250

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseTO-247-3
Mounting StyleSMD/SMT
ConfigurationSingle
Collector- Emitter Voltage VCEO Max2.5 kV
Collector-Emitter Saturation Voltage3.8 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C5 A
Pd - Power Dissipation32 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesPlanar
PackagingTube
Continuous Collector Current Ic Max5 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs
TradenameBIMOSFET

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCYes
REACH Substance NameDechlorane plus; Dechlorane+; 1,6,7,8,9,14,15,16,17,17,18,18-dodecachloropentacyclo[12.2.1.16,9.02,1

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 35 Weeks
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16,51 €4.953,00 €
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NCNR - Cannot be cancelled or returned.

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