Reference Only

IXBT2N250-TR

MOSFETs DISC IGBT 2500V TO268AA

Manufacturer:

Mfr Part:
IXBT2N250-TR

TTI Part:
IXBT2N250-TR

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-268-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage2.5 kV
Id - Continuous Drain Current5 A
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge10.6 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation32 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time178 ns
Forward Transconductance - Min0.85 S
Product TypeMOSFETs
Rise Time280 ns
SeriesBIMOSFET
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time74 ns
Typical Turn-On Delay Time30 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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